Differential proteomics of human seminal plasma: A potential target for searching male infertility marker proteins

The clinical fertility tests, available in the market, fail to define the exact cause of male infertility in almost half of the cases and point toward a crucial need of developing better ways of infertility investigations. The protein biomarkers may help us toward better understanding of unknown cases of male infertility that, in turn, can guide us to find better therapeutic solutions. Many clinical attempts have been made to identify biomarkers of male infertility in sperm proteome but only few studies have targeted seminal plasma. Human seminal plasma is a rich source of proteins that are essentially required for development of sperm and successful fertilization. This viewpoint article highlights the importance of human seminal plasma proteome in reproductive physiology and suggests that differential proteomics integrated with functional analysis may help us in searching potential biomarkers of male infertility.     

Analytical Modelling and Simulation of Si-Ge Hetero-Junction Dual Material Gate Vertical T-Shaped Tunnel FET

Silicon - In this paper, a compact 2D analytical modelling of surface potential and simulation of Si-Ge hetero-junction Dual Material Gate Vertical t-shape T-FET is presented. In the proposed...     

Adaptive MAC Protocol for Solar Energy Harvesting Based Wireless Sensor Networks in Agriculture

The wireless sensor network is one of the promising technologies in the agriculture field. Its actual usage in real agriculture fields is limited by its dependence on the small batteries which cannot make the network survive for long. Various protocols are being designed at the network and MAC layer to increase the lifetime of the nodes, but up to a certain extent only. Hence the energy harvesting to power up the WSN nodes is a promising technology to fulfill this ever energy demand, but the protocols need to be redesigned for this scenario. Solar energy harvesting based MAC protocol which is adaptive to the changing weather conditions is designed in this paper for the smart agriculture applications. It is based on the multilayer and receiver-initiated process to improve network quality. It has shown the remarkable performance over the other energy harvesting based protocols in terms of ENO ratio, energy consumption and collision rate.

     

A stable energy efficient clustering protocol for wireless sensor networks

Sensor networks comprise of sensor nodes with limited battery power that are deployed at different geographical locations to monitor physical events. Information gathering is a typical but an important operation in many applications of wireless sensor networks (WSNs). It is necessary to operate the sensor network for longer period of time in an energy efficient manner for gathering information. One of the popular WSN protocol, named low energy adaptive clustering hierarchy (LEACH) and its variants, aim to prolong the network lifetime using energy efficient clustering approach. These protocols increase the network lifetime at the expense of reduced stability period (the time span before the first node dies). The reduction in stability period is because of the high energy variance of nodes. Stability period is an essential aspect to preserve coverage properties of the network. Higher is the stability period, more reliable is the network. Higher energy variance of nodes leads to load unbalancing among nodes and therefore lowers the stability period. Hence, it is perpetually attractive to design clustering algorithms that provides higher stability, lower energy variance and are energy efficient. In this paper to overcome the shortcomings of existing clustering protocols, a protocol named stable energy efficient clustering protocol is proposed. It balances the load among nodes using energy-aware heuristics and hence ensures higher stability period. The results demonstrate that the proposed protocol significantly outperforms LEACH and its variants in terms of energy variance and stability period.     

Quantum mechanical analytical modeling of nanoscale DG FinFET: evaluation of potential,threshold voltage and source/drain resistance

Two-dimensional (2D) quantum mechanical analytical modeling has been presented in order to evaluate the 2D potential profile within the active area of FinFET structure. Various potential profiles such as surface, back to front gate and source to drain potential have been presented in order to appreciate the usefulness of the device for circuit simulation purposes. As we move from source end of the gate to the drain end of the gate, there is substantial increase in the potential at any point in the channel. This is attributed to the increased value of longitudinal electric field at the drain end on application of a drain to source voltage. Further, in this paper, the detailed study of threshold voltage and its variation with the process parameters are presented. A threshold voltage roll-off with fin thickness is observed for both theoretical and experimental results. The fin thickness is varied from 10 nm to 60 nm. The percentage roll-off for our model is 77% and that for experimental result it is 75%. Form the analysis of source/drain (S/D) resistance, it is observed that for a fixed fin width, as the channel length increases, there is an enhancement in the parasitic S/D resistance. This can be inferred from the fact that as the channel length decreases, quantum confinement along the S/D direction becomes more extensive. For our proposed devices a close match is obtained with the results through the analytical model and reported experimental results, thereby validating our proposed QM analytical model for DG FinFET device.     

An enhanced architecture for route discovery and load balancing in WSN

The Journal of Supercomputing - The sensor network comprises various sensor nodes in which packet transfer requires detection of the route. The discovery of the path in such a network becomes...     

Evolution of PAPR Reduction Techniques: A Wavelet Based OFDM Approach

Wireless Personal Communications - Orthogonal frequency division multiplexing (OFDM) is considered among the most suitable multiplexing technique for realizing high speed wireless communication in...     

Impact of underlap spacer region variation on electrostatic and analog performance of symmetrical high-k SOI FinFET at 20 nm channel length

Continued scaling of CMOS technology to achieve high performance and low power consumption of semiconductor devices in the complex integrated circuits faces the degradation in terms of electrostatic integrity,short channel effects (SCEs),leakage currents,device variability and reliability etc.Nowadays,multigate structure has become the promising candidate to overcome these problems.SOI FinFET is one of the best multigate structures that has gained importance in all electronic design automation (EDA) industries due to its improved short channel effects (SCEs),because of its more effective gate-controlling capabilities.In this paper,our aim is to explore the sensitivity of underlap spacer region variation on the performance of SOI FinFET at 20 nm channel length.Electric field modulation is analyzed with spacer length variation and electrostatic performance is evaluated in terms of performance parameter like electron mobility,electric field,electric potential,sub-threshold slope (SS),ON current (Ion),OFF current (Ioff) and Ion/Ioff ratio.The potential benefits of SOI FinFET at drain-to-source voltage,VDS =0.05 V and VDS =0.7 V towards analog and RF design is also evaluated in terms of intrinsic gain (Av),output conductance (gd),trans-conductance (gm),gate capacitance (Cgg),and cut-off frequency (fT =gm/2πCgg) with spacer region variations.     

Design and analysis of a gate-all-around CNTFET-based SRAM cell

This paper proposes a highly stable and low power 6-T static random access memory (SRAM) cell design using a gate-all-around carbon nanotube field effect transistor (GAA-CNTFET). The 6-T SRAM cell is designed and analyzed in HSPICE for different performance metrics viz. SNM, read SNM, write SNM, delay, and leakage power for both the top gate CNTFET and the GAA-CNTFET. The effect of variation of the power supply voltage on the leakage current is also presented, and it was found that the GAA-CNTFET accounts for low power dissipation at higher supply voltage. The 6-T SRAM cell is analyzed for different flat band conditions of the p-type CNTFET taking flatband of the n-type as constant, which is called a dual flat band voltage technique. Through simulations, it is found that by increasing the flatband voltage of a p-type CNTFET, the SRAM gives better performance. The dual flatband variation technique is compared with dual chirality technique, and it is observed that both techniques give the same results.