Sheldon H. White (1928-2005).

Sheldon "Shep" Harold White, one of developmental psychology's most distinguished scholars, died on March 17, 2005, at the age of 76. He is perhaps best remembered for his sharp intellect, generous spirit, good humor, and warm compassion. Shep's principal work lay in three intermeshed areas: children's learning and cognitive development, social programs and policies, and the history of developmental psychology. Shep White is sorely missed by his family and friends, and countless children have unknowingly benefited from his research, scholarship, and contributions to public policy. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Dynamic Profile Monitoring for Flooding Prognosis in Packed Columns

In the chemical industry, real‐time flooding prognosis is a necessity for packed‐column operation because the flooding phenomenon interferes with the performance of production systems. In this work, the profile monitoring technique is utilized to capture the dynamic behavior of pressure drop, which is an important indicator for the flooding phenomenon. In each moving window, the pressure drop signals are described by using an exponential generalized autoregressive conditional heteroskedastic model. The onset of the flooding phenomenon is then indicated by changes in model parameters. Moreover, to efficiently capture the process change, a nonparametric approach is utilized to establish a statistical control chart. Experimental and comparison results show the advantages of the proposed method.     

水产养殖投入品应用现状及规范管理

水产品的质量安全问题关系到广大人民的生命健康和生活质量,在水产养殖和加工的过程中,投入品的合理使用,对于改善水质、预防疾病、提高水产品质量都具有重要作用。然而由于投入品种类繁多、成分复杂等原因,导致许多投入品生产与使用不当的现象,严重威胁了水产品的质量安全。因此,必须严格规范使用水产养殖投入品,着力构建出完整的适用于投入品的生态安全评价与监管体系,减少投入品对水产品质量安全的负面影响。本文阐述了投入品使用现状和主要存在的问题,以及对水产品质量的影响。同时介绍了选择性育种等国际关注的新型研究方向,并提出相关管理建议和改善措施,帮助构建水产养殖投入品市场的良好秩序,推进水产养殖业未来的可持续性健康发展。     

Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

The effects of rapid thermal annealing (RTA) on InGaP/InGaAsN heterojunction bipolar transistors (HBTs) with a carbon-doped base have been studied. The hydrogen and nitrogen concentrations in the base, as well as the direct current (DC) and radio frequency (RF) device performance, were studied as a function of the annealing temperature. A 30-sec anneal at 650°C and 700°C under N₂ ambient effectively eliminates hydrogen from the base. As the annealing temperature is increased, the base sheet resistance decreases, and the corresponding maximum frequency of oscillation increases. For all annealing temperatures studied, we found degradation in the DC gain, presumably caused by the increase of nitrogen concentration in the base region.     

High‐rate deposition of a‐Si:H thin layers for high‐performance silicon heterojunction solar cells

In this paper, we describe a technique for high‐quality interface passivation of n‐type crystalline silicon wafers through the growth of hydrogenated amorphous Si (a‐Si:H) thin layers using conventional plasma‐enhanced chemical vapor deposition. We investigated the onset of crystallization of the a‐Si:H layers at various deposition rates and its effect on the surface passivation properties. Epitaxial growth occurred, even at a low substrate temperature of 90 °C, when the deposition rate was as low as 0·5 Å/s; amorphous growth occurred at temperatures up to 150 °C at a higher deposition rate of 4·2 Å/s. After optimizing the intrinsic a‐Si:H layer deposition conditions and then subjecting the sample to post‐annealing treatment, we achieved a very low surface recombination velocity (7·6 cm/s) for a double‐sided intrinsic a‐Si:H coating on an n‐type crystalline silicon wafer. Under the optimized conditions, we achieved an untextured heterojunction cell efficiency of 16·7%, with a high open‐circuit voltage (694 mV) on an n‐type float‐zone Si substrate. On a textured wafer, the cell efficiency was further enhanced to 19·6%. Copyright © 2011 John Wiley & Sons, Ltd.