A Highly Selective and Sensitive H2S Gas Sensor Based on Novel Nanostructure Core–Shell FeCr2O4@ZnO@MgO

Journal of Inorganic and Organometallic Polymers and Materials - Gas detection is significant for controlling industrial and vehicle emission, house equipment security and environmental monitoring....     

Bio-Based Thermosetting Resins for Future Generation: A Review

In this review, thermosetting polymers derived from natural resources are highlighted for future generation with greater sustainability for different applications. Recently, agro-based polymer products are gained popularity since last two decades due to the depletion of fossil reserves and to protect the environment from carbon emissions. This review also designed to explain the various types of agro-based polymer products derived from cardanol, itaconic acid, tannin, sugar (isosorbide), and vegetable oils as important starting materials due to their abundant availability, low price, and unique reactive chemical structure.     

Synthesis and Luminescence Properties of Eu3+ Doped Sr2SiO4 Phosphor

Abstract

The europium doped Sr₂SiO₄ phosphors were prepared by the combustion synthesis technique. The prepared samples of europium doped Sr₂SiO₄ phosphors were characterized by the X-Ray Diffraction (XRD), Ultraviolet Visible spectroscopy (UV), Fourier Transform Infrared Spectroscopy (FT-IR), Field Emission Scanning Electron Microscopy (FE-SEM), Energy Dispersive Spectra (EDS) and Photoluminescence Technique (PL). The orthorhombic crystal structure of the prepared sample was confirmed by using XRD. The formation of fiber like nano structured nature was confirmed by the images captured using the FE-SEM technique. The band gap energies were calculated using the UV-Visible spectra of the samples and these band gap energies were observed as 4.5826?eV for Sr₂SiO₄ and 4.1748?eV for Eu (5?m%) doped Sr₂SiO₄. The two different PL emission peaks were observed for two different excitation wavelengths. One peak was observed at the 590?nm under 393?nm excitation and another peak was observed at the 615?nm under 408?nm excitation. The CIE color coordinates of the Eu³⁺ doped Sr₂SiO₄ phosphors are x?≈?0.6615, y?≈?0.3382 (red color) observed for 408?nm excitation and x?≈?0.5636, y?≈?0.4356 (orange) observed for 393?nm excitation calculated using the color calculator program radiant imaging.     

Fabrication of an a-IGZO thin film transistor using selective deposition of cobalt by the self-assembly monolayer (SAM) process

Interest in transparent oxide thin film transistors utilizing ZnO material has been on the rise for many years. Recently, however, IGZO has begun to draw more attention due to its higher stability and superior electric field mobility when compared to ZnO. In this work, we address an improved method for patterning an a-IGZO film using the SAM process, which employs a cost-efficient micro-contact printing method instead of the conventional lithography process. After a-IGZO film deposition on the surface of a SiO2-layered Si wafer, the wafer was illuminated with UV light; sources and drains were then patterned using n-octadecyltrichlorosilane (OTS) molecules by a printing method. Due to the low surface energy of OTS, cobalt was selectively deposited on the OTS-free a-IGZO surface. The selective deposition of cobalt electrodes was successful, as confirmed by an optical microscope. The a-IZGO TFT fabricated using the SAM process exhibited good transistor performance: electric field mobility (micro(FE)), threshold voltage (V(th)), subthreshold slope (SS) and on/off ratio were 2.1 cm2/Vs, 2.4 V, 0.35 V/dec and 2.9 x 10(6), respectively.     

Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors

In this work, Y₂O₃ was evaluated as a gate insulator for thin film transistors fabricated using an amorphous InGaZnO₄ (a-IGZO) active layer. The properties of Y₂O₃ were examined as a function of various processing parameters including plasma power, chamber gas conditions, and working pressure. The leakage current density for the Y₂O₃ film prepared under the optimum conditions was observed to be ~ 3.5 × 10^− 9 A/cm² at an electric field of 1 MV/cm. The RMS roughness of the Y₂O₃ film was improved from 1.6 nm to 0.8 nm by employing an ALD (Atomic Layer Deposition) HfO₂ underlayer. Using the optimized Y₂O₃ deposition conditions, thin film transistors (TFTs) were fabricated on a glass substrate. The important TFT device parameters of the on/off current ratio, sub-threshold swing, threshold voltage, and electric field mobility were measured to be 7.0 × 10⁷, 0.18 V/dec, 1.1 V, and 3.3 cm²/Vs, respectively. The stacked insulator consisting of Y₂O₃/HfO₂ was highly effective in enhancing the device properties.     

Synthesis and Characterization of Novel CoCr2O4@GeO2@ZnO Core–Shell Nanostructure: Focus on Electrical Conductivity and Gas Sensing Properties

Journal of Inorganic and Organometallic Polymers and Materials - An effort has been made to develop and synthesize novel CoCr2O4@GeO2@ZnO core–shell nanostructure gas sensor via sol–gel...