异质结光晶体管的研究与进展

回顾了异质结光晶体管(HPT)在近年来的重要进展,综合分析了HPT的工作原理以及影响其性能的主要参数。综述了不同材料制作的HPT的研究现状,得出了目前限制HPT发展的主要因素及当前应重点解决由于基区表面复合等效应导致的增益下降和由于结电容的充放电限制的响应带宽等问题的结论。     

用CMOS工艺实现VSR光电集成接收机的途径

介绍了10Gbit／s速率的甚短距离光传输系统VSR(Very Short Reach)中的接收机。分析了几种有希望用于VSR系统的CMOS工艺兼容的光电探测器。提出用CMOS电路实现VSR光电集成(OEIC)接收机的可能性和实现方法。     

天然气吸附储存脱附过程的动态模拟

通过热动力学计算,认识了脱附过程当中储罐内温度剖面分布的典型特征:储罐轴心处的温度下降幅度最大。分析了脱附过程当中储罐壁的热交换、吸附剂的导热系数以及储罐内的初始压力对储罐内的温度剖面的影响。结论是加强储罐外壁的热交换、增大吸附剂的导热系数皆能改善吸附储罐内的温度剖面。     

Analysis of the time response of multiconductor transmission lineswith frequency-dependent losses by the method ofconvolution-characteristics

A new method for analysis of the time response of multiconductor transmission lines with frequency-dependent losses is presented. This method can solve the time response of various kinds of transmission lines with arbitrary terminal networks. Particularly, it can analyze nonuniform lines with frequency-dependent losses, for which no effective method for analyzing their time response exists. This method starts from the frequency-domain telegrapher's equations. After decoupling and inversely Fourier transforming, then a set of decoupled time-domain equations including convolutions are given. These equations can be solved with the characteristic method. The results obtained with this method are stable and accurate. Two examples are given to illustrate the application of this method to various multiconductor transmission lines     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

压差式漏率测试仪的实验研究

将薄膜电容真空计的测量室接于被测密闭容器，静态真空室接于一个比较容器，即组成一台压差式漏率测试仪。首先使两容器压力平衡，真空计读数为零。当被测容器存在漏孔时，真空计薄膜两侧形成压差，真空计指示读数，继而计算出该容器的漏率。应用商品真空计在抽真空测试时，检测的最小可测漏率达10－4～10-5Pa·L／s；而在充压测试时，因受气体温度变化的影响，灵敏度会降低几个量级。该仪器有可能具备寻找漏孔位置和确定漏孔漏率的功能。     

环保型隧道防火涂料的研究

介绍了国内外公路隧道、铁路隧道及地铁火灾情况 ,研制出一种可在潮湿环境中使用、火灾发生时无有害气体产生的环保型隧道防火涂料。涂层厚度 18～2 0 mm,耐火极限达 3小时。为防止涂料加水拌和后沉淀分层 ,增加涂料的和易性 ,研制出一种分散剂。     

等偏移距自动初至静校正

茅金根 ,梁秀文 ,杨午阳 ,冯有奎 .等偏移距自动初至静校正 .石油地球物理勘探 ,2 0 0 2 ,37(5 ) :4 6 9～ 4 72　　本文提出一种自动计算静校正量的新方法。它首先在等偏移距道集内对相邻道的初至波采用高精度相关构建一个关于炮、检时差的超大矩阵方程 ,然后采用优化统计迭代算法求解炮点和检波点的静校正量 ,并用概率分布函数确定精确的炮、检静校正量 ,最后用误差校正函数消除炮、检静校正误差。实际资料处理结果表明 ,本方法自动、省时、精度高。     

利用新型场效应管(QFET)的正向变换器

介绍了单端正向变换器基本电路，重点叙述带三路调节DC电压的100KHZ180W离线电源。它采用具有低导电阻RDS和低栅极电荷Qg的新型场效应管（QFET）作为变换电路的主开关器件，降低了电源开关损耗并提高了效率3%-5%。     

The Synthesis of Sulfated Titanium Oxide Nanotubes

TiO₂ nanotubes can be prepared in gram quantities by treating anatase TiO₂ powder with concentrated NaOH solution. These TiO₂ nanotubes acquired strong acidity after being impregnated with sulfuric acid solution and calcined at 300 °C. The anatase TiO₂ powder used to prepare the nanotube did not catalyze the esterification between cyclohexanol and acetic acid, while sulfated TiO₂ nanotubes were very reactive toward the esterification reaction.