A novel context-aware recommender system based on a deep sequential learning approach (CReS)

Neural Computing and Applications - With an increase in online longitudinal users’ interactions, capturing users’ precise preferences and giving accurate recommendations have become an...     

运动饮料配方设计概论

运动中，人体生理发生一系列的变化，包括水分损失、血糖／糖原消耗、电解质损失等，导致运动中／后的疲劳和运动能力下降。以运动中人体生理特点为基础，通过讨论运动前／中／后补充水、碳水化合物及电解质的问题，论证了运动饮料配方设计的原理依据。     

Mining predecessor–successor rules from DAG data

Data mining extracts implicit, previously unknown, and potentially useful information from databases. Many approaches have been proposed to extract information, and one of the most important ones is finding association rules. Although a large amount of research has been devoted to this subject, none of it finds association rules from directed acyclic graph (DAG) data. Without such a mining method, the hidden knowledge, if any, cannot be discovered from the databases storing DAG data such as family genealogy profiles, product structures, XML documents, task precedence relations, and course structures. In this article, we define a new kind of association rule in DAG databases called the predecessor–successor rule, where a node x is a predecessor of another node y if we can find a path in DAG where x appears before y. The predecessor–successor rules enable us to observe how the characteristics of the predecessors influence the successors. An approach containing four stages is proposed to discover the predecessor–successor rules. © 2006 Wiley Periodicals, Inc. Int J Int Syst 21: 621–637, 2006.     

Microstrip stepped impedance resonator bandpass filter with an extended optimal rejection bandwidth

Bandpass filters with an optimal rejection bandwidth are designed using parallel-coupled stepped impedance resonators (SIRs). The fundamental (f/sub o/) and higher order resonant harmonics of an SIR are analyzed against the length ratio of the high-Z and low-Z segments. It is found that an optimal length ratio can be obtained for each high-Z to low-Z impedance ratio to maximize the upper rejection bandwidth. A tapped-line input/output structure is exploited to create two extra transmission zeros in the stopband. The singly loaded Q(Q/sub si/) of a tapped SIR is derived. With the aid of Q/sub si/, the two zeros can be independently tuned over a wide frequency range. When the positions of the two zeros are purposely located at the two leading higher order harmonics, the upper rejection band can be greatly extended. Chebyshev bandpass filters with spurious resonances up to 4.4f/sub o/, 6.5f/sub o/, and 8.2f/sub o/ are fabricated and measured to demonstrate the idea.     

Cell cycle-dependent tumor necrosis factor apoptosis

To determine if tumor necrosis factor (TNF)-mediated apoptosis affects cells at defined stages of the cell cycle, WEHI-164/2F (WEHI) cells were synchronized at G0-G1 after 3-day cultures in medium containing RPMI 1640 and 0.5% FCS (RPMI-0.5% FCS). The arrested WEHI cells (60-75% in G0-G1) showed increased sensitivity to TNF killing, measured as 48-h 3-(5-dimethylthiazol-2-yl)-2,5-diphenyl-tetrazolium bromide assays, and 15-h apoptosis by propidium iodide staining and flow cytometry analysis. The TNF killing kinetics of G0-G1-arrested cells was similar to controls, and TNF did not accelerate or retard cell cycle progression of the arrested cells after feeding with fresh RPMI-0.5% FCS. However, TNF inhibited WEHI DNA synthesis as early as 1 h after treatment, and inhibition was proportionate to sensitivity to TNF-induced apoptosis. WEHI cells treated with TNF showed a higher percentage of cells in S phase with concomitant decrease in G0-G1 and G2-M. When cultured for 3-18 h in fresh RPMI-0.5% FCS to allow progression of the G0-G1-arrested cells toward the G1-S boundary, WEHI cells became more sensitive to TNF killing, especially at the 3-9 h time points. Moreover, TNF did not degrade [125I]5-iodo-2'-deoxyuridine-labeled WEHI DNA if the labeled cells were precultured for 9 h in fresh RPMI-0.5% FCS to allow them to pass S phase before the addition of TNF. These results show that TNF-induced apoptosis of WEHI cells is connected to cell cycle events; WEHI targets receive the TNF cytotoxic signal mainly at the G1-S boundary and begin to die by apoptosis as they exit from S phase.     

Structural and electronic properties of CuInSe2

Structural investigation on monocrystalline CuInSe₂ samples has been made. From the single crystal results, the space group of CuInSe₂ was confirmed to be Iˉ42d and the crystal solidification direction was investigated. Compositional uniformity of the ingots was established by EPMA and it was found that the indium concentration was greater than that for copper. Systematic annealing experiments were carried out in vacuum at different temperatures (as low as 160° C) and for different times. Large variation in resistivity was observed after the annealing treatment. P-type samples were found to convert to n-type after the heat-treatments.     

Stress analysis of spontaneous Sn whisker growth

Spontaneous Sn whisker growth is a surface relief phenomenon of creep, driven by a compressive stress gradient. No externally applied stress is required for the growth, and the compressive stress is generated within, from the chemical reaction between Sn and Cu to form the intermetallic compound Cu₆Sn₅ at room temperature. To obtain the compressive stress gradient, a break of the protective oxide on the Sn surface is required because the free surface of the break is stress-free. Thus, spontaneous Sn whisker growth is unique that stress relaxation accompanies stress generation. One of the whisker challenging issues in understanding and in finding effective methods to prevent spontaneous Sn whisker growth is to develop accelerated tests of whisker growth. Use of electromigration on short Sn stripes can facilitate this. The stress distribution around the vicinity and the root of a whisker can be obtained by using the micro-beam X-ray diffraction utilizing synchrotron radiation. A discussion of how to prevent spontaneous Sn whisker growth by blocking both stress generation and stress relaxation is given.