Apoptosis and delayed neuronal damage after carbon monoxide poisoning in the rat

Delayed neurological damage after CO hypoxia was studied in rats to determine whether programmed cell death (PCD), in addition to necrosis, is involved in neuronal death. In rats exposed to either air or CO (2500 ppm), microdialysis in brain cortex and hippocampus was performed to determine the extent of glutamate release and hydroxyl radical generation during the exposures. Groups of control and CO-exposed rats also were tested in a radial maze to assess the effects of the CO exposures on learning and memory. At 3, 7, and 21 days after CO exposure brains were perfusion-fixed and hematoxylin-eosin (H&E) was used to assess injury and to select regions for further examination. DNA fragmentation was sought by examining cryosections with the terminal deoxynucleotidyl transferase-mediated dUTP-biotin nick-end labeling (TUNEL) reaction. We found significant increases in glutamate release and .OH generation during and immediately after CO hypoxia. CO-exposed rats showed learning and memory deficits after exposure associated with heterogeneous cell loss in cortex, globus pallidus, and cerebellum. The frontal cortex was affected most seriously; the damage was slight at Day 3, increased at Day 7, and persistent at Day 21 after CO exposure. TUNEL staining was positive at all three time points, and TUNEL-labeled cells were distributed similarly to eosinophilic cells. The number of cells stained by TUNEL was less than by H&E and amounted to 2 to 5% of all cell nuclei in regions of injury. Ultrastructural features of both neuronal necrosis and apoptosis also were observed readily by electron microscopy. These findings indicate that both necrosis and apoptosis (PCD) contribute to CO poisoning-induced brain cell death.     

A Comparison of Free BDDs and Transformed BDDs

Ordered binary decision diagrams (OBDDs) introduced by Bryant (IEEE Trans. on Computers, Vol. 35, pp. 677–691, 1986) have found a lot of applications in verification and CAD. Their use is limited if the OBDD size of the considered functions is too large. Therefore, a variety of generalized BDD models has been presented, among them FBDDs (free BDDs) and TBDDs (transformed BDDs). Here the quite tight relations between these models are revealed and their advantages and disadvantages are discussed.     

A note on classes of complements and the LBA problem

Summary The complements of an AFL form an AFL if and only if is closed under length-preserving universal quantification. The complements of the context-sensitive languages form a principal AFL with a hardest set L ₁. The context-sensitive languages are closed under complementation if and only if L ₁ is context-sensitive.This research was supported in part by the National Science Foundation under Grants MCS76-10076 and DCR74-15091     

Amounts of nondeterminism in finite automata

Summary The amount of nondeterminism in a nondeterministic finite automaton (NFA) is measured by counting the minimal number of guessing points a string w has to pass through on its way to an accepting state. NFA's with more nondeterminism can achieve greater savings in the number of states over their deterministic counterparts than NFA's with less nondeterminism. On the other hand, for some nontrivial infinite regular languages a deterministic finite automaton (DFA) can already be quite succinct in the sense that NFA's need as many states (and even context-free grammars need as many nonterminals) as the minimal DFA has states.This research was supported in part by the National Science Foundation under Grant No. MCS 76-10076     

On reducing the number of states in a PDA

A transformation is presented which converts any pushdown automaton (PDA)M ₀ withn ₀ states andp ₀ stack symbols into an equivalent PDAM withn states and n ₀ /n² p ₀ stack symbols into an equivalent ofn, 1n ₀. This transformation preserves realtime behavior but not derterminism. The transformation is proved to be the best possible one in the following sense: for each choice of the parametersn ₀ + 1 stack symbols for any desired value realtime PDAM ₀ such that any equivalent PDAM (whether realtime or not) havingn states must have at least (n ₀ /n)² p₀ stack symbols. Furthermore, the loss of deterministic behavior cannot be avoided, since for each choice ofn ₀ andp ₀, there is a deterministic PDAM ₀ such that no equivalent PDAM with fewer states can be deterministic.This research was supported in part by the National Science Foundation under Grants MCS76-10076 and MCS76-10076A01.     

Temperature stability of thin anodic oxide films in metal/insulator/metal structures: A comparison between tantalum and aluminium oxide

The dielectric breakdown of thin (d = 3–4 nm) aluminium and tantalum oxide films was investigated by means of current voltage plots in metal/insulator/metal systems. Dielectric breakdown field strengths, E_DB, of 0.6 GV m^− 1 were found for both oxide types at room temperature. Differences appear in the temperature dependence of E_DB. Tantalum oxide films show an unchanged breakdown behaviour for temperatures up to 420 K while aluminium oxide films lose already 80% of their E_DB value in the same temperature range. Time-resolved investigations of the electric breakdown revealed intermediate states of both oxide types which were stable for several ms being characterized by an enhanced tunnel current. The breakdown voltage clearly scales with the oxide thickness for both oxide types.