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A 2D analytical model for transconductance, Sub-threshold current and Sub-threshold swing for Triple Material Surrounding Gate MOSFET (TMSG) is presented in this paper. Based on the solution of two dimensional Poisson equation, the physics based model of sub-threshold current of the device is derived. The model also includes the effect of gate oxide thickness and silicon thickness on the sub-threshold swing characteristics. Transconductance to drain current ratio of the triple material surrounding gate is calculated since it is a better criterion to access the performance of the device. The effectiveness of TMSG design was scrutinized by comparing with other triple material and dual material gate structures. Moreover the effect of technology parameter variations is also studied and proposed. This proposed model offers basic guidance for design of TMSG MOSFETs. The results of the analytical model are compared with the MEDICI simulation results thus providing validity of the proposed model. 相似文献
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In this paper, analytical model for threshold voltage is derived for fully depleted Triple material Surrounding gate (TMSG) SOI MOSFET. Three gate material of different work functions are introduced in the SOI MOSFET structure to reduce the short channel effects. The two dimensional Poisson equation is solved and based on parabolic approximation method, the model for threshold voltage is developed. The threshold voltage is analyzed for device parameters such as gate length ratios, oxide thickness, silicon thickness, doping concentration. The results of the analytical model values are validated using MEDICI simulation. 相似文献
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In the proposed work analytical modeling of single halo triple material surrounding gate (SH-TMSG) MOSFET is developed. The threshold voltage and subthreshold current has been derived using parabolic approximation method and the simulation results are analyzed. The threshold voltage roll off is reduced and it denotes the deterioration of short channel effects. The results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated. 相似文献
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Suguna M. Charumathi V. Hemalatha M. Balamurugan N. B. Kumar D. Sriram Dhanaselvam P. Suveetha 《SILICON》2022,14(5):2389-2396
Silicon - In this study dual material gate FinFET is designed to work as a dielectric modulated biosensor for detecting a variety of proteins. Surface potential, Electric field, Threshold voltage,... 相似文献
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Suguna M. Nithya sree V. A. Kaveri R. Hemalatha M. Balamurugan N. B. Sriramkumar D. Dhanaselvam P. Suveetha 《SILICON》2022,14(16):10729-10740
Silicon - A two-dimensional analytical model is proposed in this paper for surface potential and drain current on Triple Material Surrounding Gate Heterojunction Tunnel Field Effect Transistor... 相似文献
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