排序方式: 共有37条查询结果,搜索用时 15 毫秒
1.
G. B. Galiev R. M. Imamov B. K. Medvedev V. G. Mokerov É. Kh. Mukhamedzhanov É. M. Pashaev V. B. Cheglakov 《Semiconductors》1997,31(10):1003-1005
The results of an investigation of the structural perfection of GaAs epitaxial films grown by molecular-beam epitaxy at low
growth temperatures (240–300 °C) and various As/Ga flux ratios (from 3 to 13) are presented. Diffraction reflection curves
display characteristic features for the samples before and after annealing in the temperature range from 300 to 800 °C. Hypotheses
which account for these features are advanced. The range of variation of the arsenic/gallium flux ratio, in which low-temperature
growth takes place under nearly stoichiometric conditions, is established.
Fiz. Tekh. Poluprovodn. 31, 1168–1170 (October 1997) 相似文献
2.
I. G. Pashaev 《Semiconductors》2013,47(6):771-774
Au x Ti100 ? x /n-Si Schottky diodes are fabricated and studied; in addition, the electrical properties of diodes containing metal films with varying composition (x = 0, 14, 30, 38, 60, 80, and 100) are also studied. Using X-ray phase analysis, it is established that the film of Au38Ti62 composition has the amorphous structure, while the remaining films Au x Ti100 ? x possess the polycrystalline structure. The main parameters of the Schottky diodes are determined in relation to the composition and structure of the metal films. As a result, it is shown that the electrical properties of Au x Ti100 ? x /n-Si Schottky diodes are related to variations in the composition and structure of metal films. 相似文献
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4.
B. P. Pashaev D. K. Palchaev E. G. Pashuk V. G. Revelis 《Journal of Engineering Physics and Thermophysics》1980,38(4):358-363
Resistivity, thermal conductivity, and ultrasound velocity for the metals of the third group, namely, gallium, indium, and thallium are given in a temperature range from 300 to 1000°K as well as resistivity and thermal conductivity of indium-thallium and thallium-tin alloy systems in wide temperature and concentration ranges.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 38, No. 4, pp. 614–620, April, 1980. 相似文献
5.
A. M. Pashaev A. R. Gasanov Kh. I. Abdullaev 《Radioelectronics and Communications Systems》2008,51(1):53-56
In this paper we discuss an operation of the acousto-optic videosignal temporal scale converter, which can operate in temporal compression mode and also in temporal expansion. 相似文献
6.
A. M. Pashaev R. A. Sadykhov F. T. Ildyz Kh. T. Karabork 《Measurement Techniques》2006,49(11):1169-1169
7.
F. F. Aliev M. B. Jafarov B. A. Tairov G. P. Pashaev A. A. Saddinova A. A. Kuliev 《Semiconductors》2008,42(10):1146-1148
Temperature dependences of electrical conductivity σ, Hall coefficient R, and thermopower α0 in Ag2S are reported. It is established that at T ≈ 435 ± 5 K, all kinetic parameters vary drastically, which is associated with a change in parameters of the conduction band. It is shown that the dispersion law of electron energy in β-Ag2S corresponds to the Kane model. 相似文献
8.
Zaitsev A. A. Mokerov V. G. Pashaev E. M. Sutyrin A. G. Yakunin S. N. 《Russian Microelectronics》2004,33(1):27-32
The structure of (In,Ga,Al)As/GaAs stacks with one to three layers of self-assembled InAs quantum dots is studied by high-resolution x-ray diffractometry and x-ray reflectometry. It is shown that the quantum dots are almost pyramidal in shape. It is found that (i) a first InAs layer, 2.7 ML thick, is invariably produced with a faceted surface and (ii) vertical coupling of quantum dots and superlattice formation do occur (with three quantum-dot layers). It is demonstrated that combining the two methods provides researchers with more reliable structural data. 相似文献
9.
P. D. Sarkisov O. B. Butusov V. P. Meshalkin V. G. Sevast’yanov V. B. Pashaev 《Theoretical Foundations of Chemical Engineering》2013,47(2):83-88
The molecular-dynamics simulation of crystal system of silicon carbide at various temperatures has been performed using methods and programs of computer molecular design. Graphs of radial-distribution functions have been obtained for Si-C pairs of atoms, as well as the configurations of atoms in crystal systems at various temperatures. The dependence of the melting point of the SiC crystal system vs. the characteristics of the initial crystal structure to the approximation of the given Tersoff potential and molecular assembly has been studied at the constant number of particles, pressure, and temperature. 相似文献
10.
A. M. Pashaev E. M. Gojaev A. A. Movsumov Kh. S. Khalilova S. Kh. Agaeva 《Inorganic Materials》2010,46(1):14-16
An acoustophotovoltaic effect in TlIn0.98Gd0.02Se2 single crystals has been detected and investigated. 相似文献