Efficiency improvement of near-ultraviolet InGaN LEDs using patterned sapphire substrates

The use of conventional and patterned sapphire substrates (PSSs) to fabricate InGaN-based near-ultraviolet (410 nm) light-emitting diodes (LEDs) was demonstrated. The PSS was prepared using a periodic hole pattern (diameter: 3 /spl mu/m; spacing: 3 /spl mu/m) on the (0001) sapphire with different etching depths. From transmission-electron-microscopy and etch-pit-density studies, the PSS with an optimum pattern depth (D/sub h/=1.5 /spl mu/m) was confirmed to be an efficient way to reduce the thread dislocations in the GaN microstructure. It was found that the output power increased from 8.6 to 10.4 mW, corresponding to about 29% increases in the external quantum efficiency. However, the internal quantum efficiency (@ 20 mA) was about 36% and 38% for the conventional and PSS LEDs, respectively. The achieved improvement of the output power is not only due to the improvement of the internal quantum efficiency upon decreasing the dislocation density, but also due to the enhancement of the extraction efficiency using the PSS. Finally, better long-time reliability of the PSS LED performance was observed.     

Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates

Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS.     

Solid polymer electrolytes. XI. Preparation,characterization and ionic conductivity of new plasticized polymer electrolytes based on chemical‐covalent polyether–siloxane hybrids

A new hybrid polymer electrolyte system based on chemical‐covalent polyether and siloxane phases is designed and prepared via the sol–gel approach and epoxide crosslinking. FT‐IR, ¹³C solid‐state NMR, and thermal analysis (differential scanning calorimetry (DSC) and TGA) are used to characterize the structure of these hybrids. These hybrid films are immersed into the liquid electrolyte (1M LiClO₄/propylene carbonate) to form plasticized polymer electrolytes. The effects of hybrid composition, liquid electrolyte content, and temperature on the ionic conductivity of hybrid electrolytes are investigated and discussed. DSC traces demonstrate the presence of two second‐order transitions for all the samples and show a significant change in the thermal events with the amount of absorbed LiClO₄/PC content. TGA results indicate these hybrid networks with excellent thermal stability. The EDS‐0.5 sample with a 75 wt % liquid electrolyte exhibits the ionic conductivity of 5.3 × 10^?3 S cm^?1 at 95°C and 1.4 × 10^?3 S cm^?1 at 15°C, in which the film shows homogenous and good mechanical strength as well as good chemical stability. In the plot of ionic conductivity and composition for these hybrids containing 45 wt % liquid electrolyte, the conductivity shows a maximum value corresponding to the sample with the weight ratio of GPTMS/PEGDE of 0.1. These obtained results are correlated and used to interpret the ion conduction behavior within the hybrid networks. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 100: 1000–1007, 2006     

Simultaneous recrystallization, phosphorous diffusion and antireflection coating of silicon films using laser treatment

Laser technique application to polycrystalline silicon thin-film solar cell fabrication on glass substrates has received appreciable attention. In this paper, a laser-doping technique is developed for plasma-deposited amorphous silicon film. A process involving recrystallization, phosphorous diffusion and antireflection coating can be achieved simultaneously using the laser annealing process. The doping precursor, a phosphorous-doped titanium dioxide (TiO₂) solution, is synthesized using a sol-gel method and spin-coated onto the sample. After laser irradiation, the polycrystalline silicon grain size was about 0.5∼1.0 μm with a carrier concentration of 2 × 10¹⁹ cm^− 3 and electron mobility of 92.6 cm²/V s. The average polycrystalline silicon reflectance can be reduced to a value of 4.65% at wavelengths between 400 and 700 nm, indicating the upper TiO₂ film of antireflection coating.     

Transformation of microcrystalline silicon films by excimer-laser-induced crystallization

We describe the excimer-laser-induced crystallization of microcrystalline silicon films deposited by plasma-enhanced chemical vapor deposition (PECVD). Microcrystalline silicon films containing 2 at.% hydrogen can be used as precursor films for the laser recrystallization process without a dehydrogenation step, and provide a wider laser energy fluence process window than the previous explosive recrystallization for low temperature polysilicon (poly-Si) thin-film transistor (TFT) fabrication. Ellipsometry, transmission electron microscopy (TEM), and atomic force microscopy (AFM) are used to evaluate the laser irradiated films. Specially, we describe using atomic force microscopy to obtain plane-view grain microstructure images.     

A Note on Weighted Least‐squares Estimation of the Shape Parameter of the Weibull Distribution

This study proposes an alternative to the weighted least‐squares (WLS) procedure for estimating the shape parameter of the Weibull distribution. Bergman (Journal of Materials Science Letters 1986; 5:611–614), Faucher and Tyson (F&T) (Journal of Materials Science Letters 1988; 7:1199–1203) suggested using different WLS approaches for Weibull parameters. However, the simulation results show that the novel approach is better than that of Bergman, and is not significantly different from that of F&T. Furthermore, the novel approach is also simpler and easier to comprehend. Copyright © 2004 John Wiley & Sons, Ltd.     

Statistical Inference about the Shape Parameter of the New Two‐parameter Bathtub‐shaped Lifetime Distribution

This paper proposes a simple and exact method for conducting a statistical test about the shape parameter of the new two‐parameter lifetime distribution with a bathtub‐shaped or increasing failure rate function, as well as an exact confidence interval for the same parameter. The necessary critical values of the test are given. The method provided in this paper can be used for type II right censored data. Moreover, Monte Carlo simulation and an example are used to compare this new method to the existing approach of Chen (Statistics and Probability Letters 2000; 49:155–161). Copyright © 2004 John Wiley & Sons, Ltd.     

Heteroepitaxial growth of indium phosphide on silicon by MOCVD using adduct source

Abstract

The heteroepitaxial growth of InP on Si by low pressure metalor‐ganic chemical vapor deposition is reported. Trimethylindium‐trimethylphosphine adduct was used as In source in this study. From X‐ray and SEM examinations, good crystallinity InP epilayers with mirror‐like surfaces can be grown directly on (100) and (111) p‐type Si substrates. Carrier concentration profile shows that the carrier distribution in the InP epilayer is very uniform. The efficient photo‐luminescence compared with that of InP homoepitaxy shows the good quality of InP/Si epilayers.     

A fast IP lookup scheme for high speed routers

Abstract

One of the key design issues for the next generation of IP routers is the IP lookup mechanism. IP lookup is an important action in a router, that is, to find the next hop for each incoming packet with a longest‐prefix‐match address in the routing table. In this paper, we propose an IP lookup mechanism with the number of memory accesses for an IP lookup being one in the best case and being four in the worst case. The forwarding table needed by our mechanism is small enough to fit in the SRAM. For example, a large routing table with 40000 routing entries can be compacted to a forwarding table of 260KBytes in our scheme.     

Thermal Stability Improvement of Vertical Conducting Green Resonant-Cavity Light-Emitting Diodes on Copper Substrates

Green light vertical-conducting resonant-cavity light-emitting diodes (RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN-GaN multiple-quantum-well active layer between three layers of the dielectric TiO-SiO distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature.