Hot carrier analysis in low-temperature poly-Si thin-film transistors using pico-second time-resolved emission microscope

We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si.     

Effect of the addition of silver compounds during the pyrolysis of manganese nitrate on tantalum anodic oxide film

A study of the pyrolysis of an aqueous solution of manganese nitrate in the presence of silver compounds has been carried out. Thermal analysis showed that the MnO₂ formation temperature and the transformation temperature from MnO₂ to Mn₂O₃ shifted towards a lower temperature in the presence of silver acetate. A large particle-size and high crystallinity MnO₂ was formed; this may be a useful method of making an excellent tantalum capacitor with high capacitance.     

Thermal Degradation Under Pulse Operation in Low-Temperature p-Channel Poly-Si Thin-Film Transistors

We analyzed the heat generation of a low-temperature polycrystalline thin-film transistor in pulse operation and proposed a technique for accurately measuring its thermal temperature in high-frequency operation. From this measurement, we were able to calculate the time constants for heating and radiation for the first time. At a low frequency, the temperature difference between when the pulse was on and off was remarkable. As the frequency was increased, the maximum and minimum temperatures approached each other and became equal at a frequency of approximately 1 kHz. We also measured the degradation in pulse operation and discussed the relationship between the thermal temperature and the degradation in the pulse operation     

A molecular dynamics study of bubble nucleation in liquid oxygen with impurities

The present study investigates bubble nucleation in liquid oxygen with dissolved impurities (nitrogen or helium molecules) using molecular dynamics simulations. When the mole fraction of impurities is 0.05, there is a fundamental difference in the bubble nucleation mechanism between the two dissolved impurities cases; vaporization in the homogeneous bulk makes a bubble in the case of a nitrogen‐dissolved liquid while phase separation of impurities and liquid molecules makes a nucleus in the case of a helium‐dissolved liquid. Fluctuations can cause local voids, which in turn can grow to be bubbles, and this effect is stronger in the case of a helium‐dissolved liquid with a lower mole fraction (0.01) than in the case of a nitrogen‐dissolved liquid with a higher mole fraction (0.05). From these results, we conclude that helium molecules have a much stronger action to raise the bubble formation pressure compared with nitrogen. In this paper, the kinetically‐defined critical nucleus, which is a very important factor in quantitatively evaluating the nucleation mechanism, is also estimated through the calculation of the size change rate of each nucleus. © 2005 Wiley Periodicals, Inc. Heat Trans Asian Res, 34(7): 514–526, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/htj.20082     

Starting method of a superconducting generator in a combined‐cycle power plant

In the combined‐cycle power plant generators are started by using the igniting arrangement up to the ignition rotational speed of the gas turbine. On the other hand, in the case of using the superconducting generator, it is difficult to apply the igniting arrangement used to generate electricity on the combined cycle for the structure as is. We examined the induction motor starting method for the superconducting generator by using the 70‐MW‐class quick‐response excitation superconducting model generator and the VVVF power supply. From the examination, we confirmed the ability to raise the rotational speed from 6 to 360 rpm. Moreover, it was found to be able to start 200‐MW‐class superconducting generators by the induction motor starting method with the analysis. © 2007 Wiley Periodicals, Inc. Electr Eng Jpn, 160(2): 30– 38, 2007; Published online in Wiley InterScience ( www.interscience. wiley.com ). DOI 10.1002/eej.20283     

Characterization of crystalline silicon grown by plasma-enhanced CVD for thin-film solar cells

High growth-rate Si epitaxy by plasma-enhanced chemical vapor deposition (PECVD) has been investigated for a thin-film solar cell application. A high growth rate of 50 μm/h was obtained at 1050°C with plasma which is 50% larger than that by the conventional CVD without plasma. The electrical properties are almost the same for epitaxial layers with and without plasma. For undoped n-type layers, the Hall mobility and carrier density were about 600 cm²/V s and low 10¹⁵ cm⁻³, respectively. The electron diffusion length in doped p-type layers was about 20 μm. These electrical properties for the layer with plasma, in spite of higher growth rate, are comparable or better than those without plasma.     

High-precision transfer-printing and integration of vertically oriented semiconductor arrays for flexible device fabrication

Flexible electronics utilizing single crystalline semiconductors typically require post-growth processes to assemble and incorporate the crystalline materials onto flexible substrates. Here we present a high-precision transfer-printing method for vertical arrays of single crystalline semiconductor materials with widely varying aspect ratios and densities enabling the assembly of arrays on flexible substrates in a vertical fashion. Complementary fabrication processes for integrating transferred arrays into flexible devices are also presented and characterized. Robust contacts to transferred silicon wire arrays are demonstrated and shown to be stable under flexing stress down to bending radii of 20 mm. The fabricated devices exhibit a reversible tactile response enabling silicon based, nonpiezoelectric, and flexible tactile sensors. The presented system leads the way towards high-throughput, manufacturable, and scalable fabrication of flexible devices.     

Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

Temperature characteristics of the open-circuit voltage (V_oc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-junction cells. Also, single-junction cells that had the similar structure to the subcells in the triple-junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of V_oc of the InGaP/InGaAs/Ge triple-junction solar cell (dV_oc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.