Atomistic simulations of grain boundary migration in copper

While the motion of twist boundaries can be readily studied by atomistic simulations with molecular dynamics (MD) under the action of an elastic driving force, the approach fails for tilt boundaries. This is due to the interaction of the elastic stress with the grain boundary (GB) structure, which causes plastic strain by GB sliding. A novel concept, the orientation correlated driving force, is introduced to circumvent this problem. It is shown that this concept can be successfully applied to the study of the migration of tilt boundaries. The migration behavior of several twist and tilt GBs was investigated. The transition from low-to high-angle boundaries can be captured, and a structural transition of tilt boundaries was found at high temperatures, which also affected the migration behavior. The results compare well with experimental results of the motion high-angle boundaries, but for low-angle boundaries, the agreement is poor. This article is based on a presentation made in the “Hillert Symposium on Thermodynamics & Kinetics of Migrating Interfaces in Steels and Other Complex Alloys,” December 2–3, 2004, organized by The Royal Institute of Technology in Stockholm, Sweden.     

Growth Stresses in the Oxide Scales on TiAl Alloys at 800 and 900°C

In the oxidation of TiAl alloys, the role of scale-growth stresses formed during oxidation has, thus far, been unknown. In the present paper the oxide-growth stresses were investigated by the deflection-test method in monofacial oxidation (DTMO) accompanied by acoustic-emission measurements. On unmodified surfaces the growth stresses are compressive and reach levels of around –100 MPa. At the same time, significant acoustic emission occurs indicating that even under isothermal conditions, stresses are relieved by a scale-cracking mechanism. For oxide scales on TiAl surfaces, which had been ion implanted with chlorine before oxidation, a very thin protective alumina layer is formed which, however, develops growth stresses in the range of several GPa, accompanied by intensive acoustic emission. In all stress–time curves, a dynamic situation is observed. This consists of phases of stress relief by scale microcracking and phases of stresses increase due to crack healing and further oxide growth. As a result, the level of stress as a function of oxidation time, is characterized by an oscillating course.     

Thomas Fincke und die <Emphasis Type="Italic">Geometria rotundi</Emphasis>

Thomas Fincke (January 6^th, 1561–April 24^th, 1656), born in Flensburg (Germany), was one of the very most important and significant scientists in Denmark during the seventeenth century, a mathematician and astrologer and physician in the beginning of modern science, a representative of humanism and an influentual academic organizer. He studied in Strasbourg (since 1577) and Padua (since 1583) and received his M.D. in Basel (1587), he practised as a physician throughout his life (since 1587 or 1590) and became a professor at Copenhagen (1591). But he was best known because of his Geometriae rotundi libri XIIII (1583), a famous book on plane and spherical trigonometry, based not on Euclid but on Petrus Ramus. In this influentual work, in which Fincke introduced the terms tangent and secant and probable first noticed the Law of Tangents and the so-called Newton-Oppel-Mauduit-Simpson-Mollweide-Gauss-formula, he showed himself to be „abreast of the mathematics of his time“.      

Developmental and light-dependent changes of the cytosolic chaperonin containing TCP-1 (CCT) subunits in maize seedlings, and the localization in coleoptiles

The cytosolic chaperonin containing TCP-1 (CCT) is known to keep fold cytoskeletal proteins and is involved in the proper organization of the cytoskeleton. These studies are based on the assumption that growth responses linked to structural rearrangement of the plant cytoskeleton include the action of CCT and the need for newly synthesized tubulin. The presence of the alpha- and epsilon-subunits of CCT was investigated in soluble fractions of protein extracts from maize mesocotyls and coleoptiles at distinct growth stages. The CCT-subunits, tubulins and actin decreased in the coleoptile in response to far-red light. In addition, independent from light treatment, the amount of CCT epsilon abundance declined with age in coleoptiles and mesocotyls between 2 and 4.5 days after sowing. In contrast to CCT epsilon, no significant light regulation of CCT alpha was found in the mesocotyl. In two day old, light-grown rapidly elongating coleoptiles part of the CCT alpha subunit and the bulk of actin and tubulin was found shifted into fractions of high molecular weight complexes when compared to slowly elongating, dark grown coleoptiles. In 4.5 day old, etiolated and elongating coleoptiles, part of both CCT-subunits and cytoskeleton proteins were found in fractions of high molecular weight. A complete disappearance of these polypeptides was observed in old far-red irradiated growth-arrested coleoptiles. CCT epsilon was found to be colocalized to microtubular structures and to the nucleus. We conclude from our data that abundance of CCT-subunits in soluble extracts is dependent on age and light treatment, but independent from the growth stage of mesocotyl and coleoptile.     

Electronic Transport in Ultrathin Gold Films on Si(111)

The morphology and electronic transport of ultrathin Au films with thicknesses d = 1 ? 5 monolayers (ML) deposited on Si(111)7 × 7 surfaces is investigated by in situ scanning tunneling microscopy and electrical resistance measurements for temperatures T = 2 ? 300 K. With decreasing film thickness, i.e. decreasing sheet conductance G_s, a transition from a weakly conducting regime described by a logarithmic temperature dependence to an insulating regime occurs. In the insulating regime, the temperature dependence is described by G_s ∝ exp[?(T ₀ /T) ⁿ] with an exponent n which gradually changes from 0.69 to 1 with decreasing film thickness. In contrast, for the Si(111)6 × 6-Au reconstruction obtained after annealing, an exponent n = 1/2 is found suggesting the formation of a soft Coulomb gap due to electron-electron interaction. PACS numbers: 68.37.-d, 68.55.-a, 73.50.-h, 73.25.+i, 81.15.-z     

Mesa and planar SiGe-HBTs on MBE-wafers

SiGe-HBTs have the potential for outstanding analog and digital or mixed-signal high frequency circuits widely based on standard Si technology. Here we review on MBE grown transistors and circuits. Processes and results of a research-like SiGe HBT and two possible production relevant HBT versions are presented. The high frequency results with f_max and f_T up to 120 GHz and a minimum noise figure of 0.9 dB at 10 GHz demonstrate the advantage of using MBE samples with steep and high base doping and high germanium contents. A comparison to the concept of reported low doped, low germanium and triangular profiled SiGe base layers, realized by UHV-CVD, is given. In addition, some circuit demonstrators of SiGe-ICs will be presented.