Low-temperature phase transformation in Li-10 at. % Mg

It is not known whether impaired hematopoiesis noted during human immunodeficiency virus (HIV) infection results from infection of stem/progenitor cells or of cells of the bone marrow microenvironment. Normal adherent primary stromal layers were exposed to HIV to determine which of this mixture of endothelial cells, fibroblasts, and macrophages are susceptible to the virus. Viral p24 in supernatants was noted with monocytotropic HIV-1Ada, HIV-1Ba-L, and HIV-1JR-FL but not with lymphotropic HIV-1LAI nor HIV-1MN strain, and only stromal macrophages expressed the viral antigens. Coculture of the layers with PHA-activated normal lymphocytes failed to rescue lymphotropic virus. No p24 was produced when macrophage-depleted stromal cells were exposed to either HIV-1Ba-L or HIV-1LAI; proviral DNA was then amplified by PCR in cells exposed to either virus, though coculture with lymphocytes rescued only HIV-1Ba-L. Altogether, these data indicate that macrophages are the major targets of HIV in cultured stromal layers. As virus replication in macrophages did not affect the profile of major cytokines involved in regulating hematopoiesis, HIV infection could alter hematopoiesis by other as yet unspecified mechanisms.     

Effects of Long-Term Temozolomide Treatment on Glioblastoma and Astrocytoma WHO Grade 4 Stem-like Cells

Glioblastoma leads to a fatal course within two years in more than two thirds of patients. An essential cornerstone of therapy is chemotherapy with temozolomide (TMZ). The effect of TMZ is counteracted by the cellular repair enzyme O⁶-methylguanine-DNA methyltransferase (MGMT). The MGMT promoter methylation, the main regulator of MGMT expression, can change from primary tumor to recurrence, and TMZ may play a significant role in this process. To identify the potential mechanisms involved, three primary stem-like cell lines (one astrocytoma with the mutation of the isocitrate dehydrogenase (IDH), CNS WHO grade 4 (HGA)), and two glioblastoma (IDH-wildtype, CNS WHO grade 4) were treated with TMZ. The MGMT promoter methylation, migration, proliferation, and TMZ-response of the tumor cells were examined at different time points. The strong effects of TMZ treatment on the MGMT methylated cells were observed. Furthermore, TMZ led to a loss of the MGMT promoter hypermethylation and induced migratory rather than proliferative behavior. Cells with the unmethylated MGMT promoter showed more aggressive behavior after treatment, while HGA cells reacted heterogenously. Our study provides further evidence to consider the potential adverse effects of TMZ chemotherapy and a rationale for investigating potential relationships between TMZ treatment and change in the MGMT promoter methylation during relapse.     

Donorsubstituierte 2,4-Diazacyclopentadienone und indigoide 1,3,5,7-Tetraazafulvalene

Donor Substituted 2,4-Diazacyclopentadienones and Indigoid 1,3,5,7-Tetraazafulvalenes Hydrolysis of tris(diethylamino)imidazolylium chloride gives rise to 2,5-bis-diethyl-amino-4H-imidazolin-4-one; thiolysis leads, depending on conditions, to 2,5-bis-diethylamino-4H-imidazolin-4-thione or potassium 2,6-bis-diethylamino-1,3,5,7-tetraazafulvalene-4,8-dithiolate. The latter can be protonated to form green 2,6-bis(dimethylamino)-3,4,7,8-tetrahydro-1,3,5,7-tetraaza-fulvalen-4,8-dithione, a new indigoid compound, and alkylated to give blue 2,6-bis-diethylamino-4,8-bis-alkylthio-1,3,5,7-tetraazafulvalenes. Treatment of 2,5-bis-diethylamino-4H-imidazolin-4-thione with copper furnishes 2,6,4,8-tetrakis-diethylamino-1,3,5,7-tetraazafulvalene. – Oxidation of 2,6-bis-dimethylamino-3,4,7,8-tetrahydro-1,3,5,7-tetraazafulvalen-4,8-dithione gives rise to (2,2′-bis-diethylamino-4,4′-bi(4H-imidazol)-5,5′-dithione, corresponding to dehydroindigo, and reduction leads to a colorless compound, corresponding to leucoindigo.     

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment

The growth of inclined GaAs nanowires (NWs) during molecular beam epitaxy (MBE) on the rotating substrates is studied. The growth model provides explicitly the NW length as a function of radius, supersaturations, diffusion lengths and the tilt angle. Growth experiments are carried out on the GaAs(211)A and GaAs(111)B substrates. It is found that 20° inclined NWs are two times longer in average, which is explained by a larger impingement rate on their sidewalls. We find that the effective diffusion length at 550°C amounts to 12 nm for the surface adatoms and is more than 5,000 nm for the sidewall adatoms. Supersaturations of surface and sidewall adatoms are also estimated. The obtained results show the importance of sidewall adatoms in the MBE growth of NWs, neglected in a number of earlier studies.     

Microstructure Fiber Soliton Laser

We demonstrate femtosecond pulse operation of a soliton fiber laser at 1.06-mum wavelength. This laser makes use of a single piece of microstructure fiber that has been designed to simultaneously provide anomalous dispersion and laser gain. Using a saturable absorber mirror with deep modulation depth to initiate and sustain mode-locking, this fiber provides clean and nearly transform-limited pulses down to a pulse duration of 180 fs. To the best of our knowledge, this constitutes the first demonstration of a pure soliton fiber laser in the neodymium gain band     

Growth mechanism and properties of InGaN insertions in GaN nanowires

We demonstrate the strong influence of strain on the morphology and In content of InGaN insertions in GaN nanowires, in agreement with theoretical predictions which establish that InGaN island nucleation on GaN nanowires may be energetically favorable, depending on In content and nanowire diameter. EDX analyses reveal In inhomogeneities between the successive dots but also along the growth direction within each dot, which is attributed to compositional pulling. Nanometer-resolved cathodoluminescence on single nanowires allowed us to probe the luminescence of single dots, revealing enhanced luminescence from the high In content top part with respect to the lower In content dot base.     

Quantitative study of spurious X-ray production in thin film microanalysis

When X-ray microanalysis is performed in a TEM on a thin area of a specimen, some a priori indistinguishable spurious photons produced in other zones of this specimen are always recorded. Several mechanisms contribute to this production. For instance, some Bremsstrahlung and characteristic photons are generated by secondary and Auger electrons; a conservative upper bound to this particular contribution is calculated for several materials, and the present approach is compared to the Monte Carlo simulation. It is then shown that, in special test-specimens, the total extraneous contribution of the thick parts of the specimen to the spectra recorded in a thin zone can be measured; different instruments may now be compared in this respect. In the HB5 STEM, this total contribution remains low; its main cause is beam scattering in the specimen, not before it. Finally, an experimental procedure for estimating this bulk contribution in any specimen of interest is proposed. Calculations and experiments are illustrated for the case of gallium arsenide.