Acoustic Emission by Quartz Tuning Forks and Other Oscillating Structures in Cryogenic 4He Fluids

We report on experimental investigations of acoustic emission by quartz tuning forks resonating at frequencies 32 kHz, 38 kHz, 77 kHz and 100 kHz immersed in cold gaseous ⁴He and its normal and superfluid liquid phases. Frequency dependence of the observed low-drive-linewidth at 350 mK together with the temperature and pressure dependences (1.3 K < T < 4.2 K, 0 < p < 25 bar) of the observed damping of the high frequency (77 and 100 kHz) resonators measured in normal liquid ⁴He and its superfluid phase provide strong and direct evidence of the importance of sound emission by these tuning forks. Three analytical models of acoustic emission by vibrating tuning forks are developed and compared with the experimental results. We also discuss the importance of sound emission for experiments with the commonly used 32 kHz tuning forks as well as other oscillating structures??spheres, wires, grids and various micromachined sensors. We compare the relative importance of dissipative losses due to laminar viscous/ballistic drag and acoustic emission in liquid and superfluid ⁴He.     

Transmission Electron Microscopy-Based Analysis of Electrically Conductive Surface Defects in Large Area GaSb Homoepitaxial Diodes Grown Using Molecular Beam Epitaxy

We investigate a mechanism causing shorting of large area GaSb diodes grown on GaSb substrates using molecular beam epitaxy (MBE). The source of these shorts is determined to be large crystallographic defects on the surface of the diodes that are formed around droplets of gallium ejected from the gallium Knudsen cells during MBE. The gallium droplets cause defects in the crystal structure, and, as the epitaxy continues, the gallium is incorporated into the surrounding material. The shape of the defects is pyramidal with a central void extending from the epi-surface to the gallium core. Processing a GaSb diode with these surface defects results in the top-side contact metal migrating into the defect and shorting the diode. This prevents realization of large area diodes that are critical to applications such as photovoltaics and detectors. The diodes in this study are electrically characterized and the defect formation mechanism is investigated using cross-section transmission electron microscopy and electron dispersive spectroscopy.     

A New Data Layout Scheme for Energy-Efficient MapReduce Processing Tasks

Yet Another Resource Negotiator (YARN) is a framework to manage and allocate resource requests from applications that process big data stored in HDFS. However, dynamic power management methods are not efficient when YARN manage applications to process big data stored in the default data layout of HDFS. In this paper, we propose a new data layout scheme that can be implemented for HDFS. A comparison between our proposal and the existing HDFS data layout scheme shows that the new data layout algorithm significantly reduces the energy consumption at the slight expense of the mean response time of jobs.     

Elastic behaviour of isolated column-supported ringbeams

Containment structures such as bins and tanks commonly consist of an elevated cylindrical vessel with a conical closure at the base. The complete structure is typically supported by a ringbeam placed at the intersection of the cylinder and cone, and this in turn is supported on columns. In this paper, a comparative study is made of three ringbeam geometries under radial and vertical loading. The axial, flexural, torsional and distortional responses of the ringbeams are modelled by treating the ringbeam as an assembly of axisymmetric shells. The behaviour is shown to be complex and the stresses are found to be poorly described by existing ringbeam design methods.     

Effect of Radio-Frequency and Low-Frequency Bias Voltage on the Formation of Amorphous Carbon Films Deposited by Plasma Enhanced Chemical Vapor Deposition

The effect of radio-frequency （RF） or low-frequency （LF） bias voltage on the for- mation of amorphous hydrogenated carbon （a-C：H） films was studied on silicon substrates with a low methane （CH4） concentration （2-10 vol.%） in CH4＋Ar mixtures. The bias substrate was applied either by RF （13.56 MHz） or by LF （150 kHz） power supply. The highest hardness values （~18-22 GPa） with lower hydrogen content in the fihns （~20 at.%） deposited at 10 vol.% CH4, was achieved by using the RF bias, However, the films deposited using the LF bias, under similar RF plasma generation power and CH4 concentration （50 W and 10 vol.%, respectively）, displayed lower hardness （~6-12 GPa） with high hydrogen content （~40 at.%）. The structures analyzed by Fourier Transform Infrared （FTIR） and Raman scattering measurements provide an indication of trans-polyacetylene structure formation. However, its excessive formation in the films deposited by the LF bias method is consistent with its higher bonded hydrogen concentration and low level of hardness, as compared to the film prepared by the RF bias method. It was found that the effect of RF bias on the film structure and properties is stronger than the effect of the low-frequency （LF） bias under identical radio-frequency （RF） powered electrode and identical PECVD （plasma enhanced chemical vapor deposition） system configuration.