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Gupta  Vidyadhar  Awasthi  Himanshi  Kumar  Nitish  Pandey  Amit Kumar  Gupta  Abhinav 《SILICON》2022,14(6):2989-2997
Silicon - This present article interprets the analytical models of central channel potential, the threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All-Around...  相似文献   
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Multimedia Tools and Applications - With the increasing growth in the network and latest technologies by which people communicates via voice or data and modifies the radio devices easily and cost...  相似文献   
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Awasthi  Himanshi  Kumar  Nitish  Purwar  Vaibhav  Gupta  Rajeev  Dubey  Sarvesh 《SILICON》2021,13(7):2071-2075
Silicon - In the present paper, the dielectric pocket (DP) technology has been employed in the Gate-All-Around (GAA) MOSFETs to improve the scalability and performance of the device. The upgraded...  相似文献   
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Purwar  Vaibhav  Gupta  Rajeev  Awasthi  Himanshi  Dubey  Sarvesh 《SILICON》2022,14(15):9361-9366
Silicon - This paper investigates the performance analysis of Dielectric Pocket (DP)-Double Gate All Around (DGAA) with three different gate dielectric materials and analyzes its performance. The...  相似文献   
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Kumar  Nitish  Awasthi  Himanshi  Purwar  Vaibhav  Gupta  Abhinav  Dubey  Sarvesh 《SILICON》2022,14(6):2679-2686
Silicon - Silicon-based Nanotube Junction-less Double-Gate-All-Around (NJL-DGAA) MOSFETs has become a promising solution to high-speed ULSI chip design. However, the change in surrounding...  相似文献   
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