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Gupta Vidyadhar Awasthi Himanshi Kumar Nitish Pandey Amit Kumar Gupta Abhinav 《SILICON》2022,14(6):2989-2997
Silicon - This present article interprets the analytical models of central channel potential, the threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All-Around... 相似文献
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Babbar Himanshi Parthiban S. Radhakrishnan G. Rani Shalli 《Multimedia Tools and Applications》2022,81(7):9111-9129
Multimedia Tools and Applications - With the increasing growth in the network and latest technologies by which people communicates via voice or data and modifies the radio devices easily and cost... 相似文献
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Awasthi Himanshi Kumar Nitish Purwar Vaibhav Gupta Rajeev Dubey Sarvesh 《SILICON》2021,13(7):2071-2075
Silicon - In the present paper, the dielectric pocket (DP) technology has been employed in the Gate-All-Around (GAA) MOSFETs to improve the scalability and performance of the device. The upgraded... 相似文献
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Silicon - This paper investigates the performance analysis of Dielectric Pocket (DP)-Double Gate All Around (DGAA) with three different gate dielectric materials and analyzes its performance. The... 相似文献
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