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排序方式: 共有3886条查询结果,搜索用时 15 毫秒
1.
Shingo Urata Hiroyuki Hijiya Kazuhiko Niwano Jun Matsui 《Journal of the American Ceramic Society》2022,105(6):4200-4207
To theoretically explore amorphous materials with a sufficiently low dielectric loss, which are essential for next-generation communication devices, the applicability of a nonequilibrium molecular dynamics simulation employing an external alternating electric field was examined using alkaline silicate glass models. In this method, the dielectric loss is directly evaluated as the phase shift of the dipole moment from the applied electric field. This method enabled us to evaluate the dielectric loss in a wide frequency range from 1 GHz to 10 THz. It was observed that the dielectric loss reaches its maximum at a few THz. The simulation method was found to qualitatively reproduce the effects of alkaline content and alkaline type on the dielectric loss. Furthermore, it reasonably reproduced the effect of mixed alkalines on the dielectric loss, which was observed in our experiments on sodium and/or potassium silicate glasses. Alkaline mixing was thus found to reduce the dielectric loss. 相似文献
2.
3.
N Okada S Sato T Sasou M Aoyama K Nishida K Yoshikawa 《Canadian Metallurgical Quarterly》1993,129(4):403-407
Ambiguous abdominal situs, asplenia/polysplenia and severe cardiac malformations characterize heterotaxy in humans. These anomalies result from the inability of the developing embryo to establish normal left-right asymmetry. We have studied an interesting family in which the heterotaxy phenotype segregates as an X-linked recessive trait. In order to map the heterotaxy locus (HTX), we have analysed 39 family members using highly-polymorphic microsatellite markers from the X chromosome. One of these markers, DXS994, shows no recombination with the disease locus in 20 informative meioses. Linkage analysis results in a maximum lod score of 6.37. Current genetic and physical mapping data assign the order of loci in Xq24-q27.1 as cen-DXS1001-(DXS994, HTX)-DXS984-tel. These results establish the first mapping assignment of situs abnormalities in humans. 相似文献
4.
Reduction of flash generated in a gas vent is of great concern for manufacturers of electronic parts. The present study proposes a theoretical model for flash generation through consideration of flow characteristics in a gas vent. The model predicts the factors controlling flash, i.e., material parameters such as zero‐shear viscosity, crystallization temperature, thermal conductivity, and heat capacity, and process parameters such as injection and mold wall temperatures, packing pressure, and the clearance of a gas vent. On the other hand, we measure the amount of flash generated in the molding of poly(phenylene sulfide) (PPS) composites containing glass fiber and spherical fillers (CaCO3 or Al2O3). Flash reduces with decreasing size of spherical fillers. These experimental data are successfully interpreted using the flash model. Polym. Eng. Sci., 45:198–206, 2005. © 2005 Society of Plastics Engineers 相似文献
5.
Takeshi Kondo Hiroyuki Ito Kazuhide Kusakabe Kazuhiro Ohkawa Kensuke Honda Yasuaki Einaga Akira Fujishima Takeshi Kawai 《Diamond and Related Materials》2008,17(1):48-54
The effect of CF4 plasma etching on diamond surfaces, with respect to treatment time, was investigated using scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrochemical measurements. SEM observations and Raman spectra indicated an increase in surface roughening on a scale of 10–20 nm, and an increase in crystal defect density was apparent with treatment time in the range of 10 s to 30 min. In contrast, alteration of the diamond surface terminations from oxygen to fluorine was found to be rather rapid, with saturation of the F/C atomic ratio estimated from XPS analysis after treatment durations of 1 min and more. The redox kinetics of Fe(CN)63−/4− was also found to be significantly modified after 10 s of CF4 plasma treatment. This behavior shows that C–F terminations predominantly affect the redox kinetics compared to the effect on the surface roughness and crystal defects. The double-layer capacitance (Cdl) of the electrolyte/CF4 plasma-treated boron-doped diamond interface was found to show a minimum value at 1 min of treatment. These results indicate that a short-duration CF4 plasma treatment is effective for the fabrication of fluorine-terminated diamond surfaces without undesirable surface damage. 相似文献
6.
7.
Subhalf micron (0.2 nm) space and amplitude linear periodic structures and an array of dot images are obtained with the Nd:YAG laser irradiation on Kapton polyimide films, poly(ethylene terephthalate) films, spin-coated polyimide films and others. Different from the excimer laser irradiation, which requires a polarizer, our solid state Nd:YAG laser source provides polarized beams without a polarizer with advantage over excimer laser irradiation. AFM and SEM studies have been carried out. XPS studies of laser exposed areas indicate no significant chemical reactions took place on exposed areas. 相似文献
8.
Hiroshi Ito Takehiko Ishiguro Tokutaro Komatsu Nozomu Matsukawa Gunzi Saito Hiroyuki Anzai 《Journal of Superconductivity and Novel Magnetism》1994,7(3):667-669
The superconducting transition of the organic compoundsκ-(BEDT-TTF)2 X is studied by resistive measurement in a magnetic field up to 10 T applied normal to the conducting plane. For the salts withX=Cu[N(CN)2]Br andX=CuCN[N(CN)2] the transition shows fanshaped broadening caused by superconductivity fluctuation. For theX=Cu(NCS)2 salt the resistivity shows a peak in the transition region in a magnetic field below 4 T.This phenomenon is suppressed in defect-reduced samples for intralayer conduction. We discuss this peak in relation to the thermal fluctuation on the Josephson junction structures in this salt. 相似文献
9.
Boron removal by titanium addition in solidification refining of silicon with Si-Al melt 总被引:4,自引:0,他引:4
Takeshi Yoshikawa Kentaro Arimura Kazuki Morita 《Metallurgical and Materials Transactions B》2005,36(6):837-842
In order to effectively remove B from Si for its use in solar cells, a process involving B removal by solidification refining
of Si using a Si-Al melt with Ti addition was investigated. For clarifying the effect of Ti addition on B removal from the
Si-Al melt, TiB2 solubilities in Si-64.6 at. pct Al melt at 1173 K and Si-60.0 at. pct Al melt at 1273 K were determined by measuring the
equilibrium concentrations of B and Ti in the presence of TiB2 precipitates. The small solubilities of TiB2 in the Si-Al melt indicate the effective removal of B from the Si-Al melt by Ti addition. Further, solidification experiments
of Si-Al alloys containing B by Ti addition were performed, and the effect of Ti addition on the solidification refining of
Si with the Si-Al melt was successfully confirmed. 相似文献
10.
Comparative studies on Ar and He closed-cycle MHD power plants combined with fossil fuel are performed. The sizes of a regenerative heat exchanger and a boiler are expected to be smaller for He than for Ar. The pressure loss of a working gas in a regenerative heat exchanger is reduced for He. The purification subsystem for He is expected to be more compact and economical than that for Ar; but a larger compressor is required for He than for Ar. 相似文献