Boundary knot method for 2D and 3D Helmholtz and convection–diffusion problems under complicated geometry

The boundary knot method (BKM) of very recent origin is an inherently meshless, integration‐free, boundary‐type, radial basis function collocation technique for the numerical discretization of general partial differential equation systems. Unlike the method of fundamental solutions, the use of non‐singular general solution in the BKM avoids the unnecessary requirement of constructing a controversial artificial boundary outside the physical domain. The purpose of this paper is to extend the BKM to solve 2D Helmholtz and convection–diffusion problems under rather complicated irregular geometry. The method is also first applied to 3D problems. Numerical experiments validate that the BKM can produce highly accurate solutions using a relatively small number of knots. For inhomogeneous cases, some inner knots are found necessary to guarantee accuracy and stability. The stability and convergence of the BKM are numerically illustrated and the completeness issue is also discussed. Copyright © 2003 John Wiley & Sons, Ltd.     

Channel-carrier mobility parameters for 4H SiC MOSFETs

In this paper, mobility parameters for enhancement-mode N-channel 4H SiC MOSFETs are extracted and implemented into 2-D device simulation program and SPICE circuit simulator. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide–semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing interface-trap density (D_it) toward the edge of the conduction band is included during the 2-D device simulation. Using measured distribution of interface-trap density for simulation of the transfer characteristics leads to a good agreement with the experimental transfer characteristic.     

A Web‐based and Group Learning Environment for Introductory Environmental Engineering

The use of computer‐based technology is becoming more prevalent in the classroom. As a part of an educational research project sponsored by the GE Foundation, strategies for augmenting a course, Introduction to Environmental Engineering (CE 280), were investigated including cross‐disciplinary experiences in teamwork, design, and the use of advanced teaching technologies such as the web. Interactive tools to assist student learning were developed and refined. Efforts have focused on developing an extensive website, web‐based quizzes and homework assignments, and tutorials. Base groups were used to provide both intellectual and emotional support to students. This paper summarizes the development of this course and the impact of rapid feedback on the progression of student understanding.     

Organic‐acid‐catalyzed sol–gel route for preparing poly(methyl methacrylate)–silica hybrid materials

In this study, a series of organic–inorganic hybrid sol–gel materials consisting of a poly(methyl methacrylate) (PMMA) matrix and dispersed silica (SiO₂) particles were successfully prepared through an organic‐acid‐catalyzed sol–gel route with N‐methyl‐2‐pyrrolidone as the mixing solvent. The as‐synthesized PMMA–SiO₂ nanocomposites were subsequently characterized with Fourier transform infrared spectroscopy and transmission electron microscopy. The solid phase of organic camphor sulfonic acid was employed to catalyze the hydrolysis and condensation (i.e., sol–gel reactions) of tetraethyl orthosilicate in the PMMA matrix. The formation of the hybrid membranes was beneficial for the physical properties at low SiO₂ loadings, especially for enhanced mechanical strength and gas barrier properties, in comparison with the neat PMMA. The effects of material composition on the thermal stability, thermal conductivity, mechanical strength, molecular permeability, optical clarity, and surface morphology of the as‐prepared hybrid PMMA–SiO₂ nanocomposites in the form of membranes were investigated with thermogravimetric analysis, differential scanning calorimetry, dynamic mechanical analysis, gas permeability analysis, ultraviolet–visible transmission spectroscopy, and atomic force microscopy, respectively. © 2008 Wiley Periodicals, Inc. J Appl Polym Sci, 2008     

6LoWPAN在物联网中的应用仿真

提出了一种基于6LoWPAN的物联网总体方案,同时对协议中的Mesh字段进行了改进,然后在网络模拟环境下对本协议平均传输成功率、平均延迟时间的性能进行了比较分析,并在仿真环境中进行了实验验证工作。实验数据表明,改进后的协议具有更好的性能。     

A study on bioglass ceramics in the Na2O-CaO-SiO2-P2O5 system

A new bioglass ceramic with composition of Na₂O 12%, CaO 28%, P₂O₅ 10% and SiO₂ 50% with a high bending strength (120–140 MPa) and compressive strength (600–750 MPa) was studied. The crystallized phases of-Ca₂P₂P₇ and Na₂Ca₃Si₆O₁₆ were determined by X-ray diffraction. Optical microscopy of the material revealed that a very uniform crystal size of about 30 m was obtained with high nucleation frequency. The nucleation and crystallization processes were also investigated. The rat shoulder test showed that the material formed a tight chemical bond with biological texture and had good biocompatibility.     

利用测井资料评价储集层性质的探讨

根据对储集层之简化导电模型的理论分析,提出了一个由电阻率、孔隙度信息表示的、反映储层性质的“孔隙结构参数S”。实际应用表明,S参数在评价储集层性质、计算储层渗透率等方面具有一定的使用价值。     

Growth characteristics of β-SiC by chemical vapour deposition

A twin-plane re-entrant corner effect (TPRE) in growth of chemical vapour deposited (CVD) -SiC is described by the film and particles of gas-phase homogeneous nucleation. The structural morphology has been characterized by scanning electron microscopy and transmission electron microscopy. Morphological characteristics of the deposited crystals, such as triangularity, hexagons or facets have been explained in terms of the re-entrant corner effect at twin junctions, which were proposed as preferential growth sites for perfect crystals. For real deposits, screw dislocations and/or the re-entrant corner effect are not expected to be compatible. The majority of chemical vapour deposited SiC crystals have a high defect density comprised of {111} twins and dislocations associated with the process variables. Infrared transmission spectra and electron spectroscopy of chemical analysis indicated that the major chemical bonds of CVD -SiC were Si-C and C-H bonds. The positions of the 1s or 2p corelevel peaks for deposits are described.