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1.
D. G. Pavel’ev N. V. Demarina Yu. I. Koshurinov A. P. Vasil’ev E. S. Semenova A. E. Zhukov V. M. Ustinov 《Semiconductors》2004,38(9):1105-1110
Characteristics of ohmic InGaAs contacts in planar diodes based on semiconductor superlattices with a small-area active region
(1–10 μm2) are studied. The diodes were formed on the basis of short (18 or 30 periods) heavily doped (1018 cm−3) GaAs/AlAs superlattices with a miniband width of 24.4 meV. The reduced resistance of the ohmic contact was equal to 2×10−7 Ω cm2 at room temperature. It is shown that the properties of fabricated planar diodes make it possible to use these diodes later
on in semiconductor devices that operate in the terahertz frequency region in a wide temperature range (4–300 K).
__________
Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1141–1146.
Original Russian Text Copyright ? 2004 by Pavel’ev, Demarina, Koshurinov, Vasil’ev, Semenova, Zhukov, Ustinov. 相似文献
2.
L. G. Gerchikov Yu. A. Mamaev A. V. Subashiev Yu. P. Yashin D. A. Vasil’ev V. V. Kuz’michev A. E. Zhukov E. S. Semenova A. P. Vasil’ev V. M. Ustinov 《Semiconductors》2006,40(11):1326-1332
Photoemission of polarized electrons from heterostructures based on InAlGaAs/GaAs superlattices with minimum conduction-band offsets is investigated. The comparison of the excitation energy dependence of the photoemission polarization degree with the calculated spectra make it possible to determine the polarization losses at different stages of the photoemission. A maximum polarization of P = 91% and a quantum yield of 0.14% are close to the best results obtained for photocathodes on the basis of strained semiconductor superlattices. 相似文献
3.
Yu. B. Vasil’ev S. D. Suchalkin S. V. Ivanov B. Ya. Mel’tser A. F. Tsatsul’nikov P. V. Neklyudov P. S. Kop’ev 《Semiconductors》1997,31(10):1071-1073
Cyclotron resonance is measured in solitary type-II InAs-AlGaSb quantum wells grown by molecular-beam epitaxy under various
growth conditions. Quantum oscillations observed in the cyclotron resonance spectra in InAs-GaSb samples are attributed to
scattering by a short-range potential due to roughness of the heterointerface. A new method based on measurement of the cyclotron
resonance spectra is proposed for assessing the quality of the heterointerface.
Fiz. Tekh. Poluprovodn. 31, 1246–1248 (October 1997) 相似文献
4.
L. Ya. Karachinsky T. Kettler N. Yu. Gordeev I. I. Novikov M. V. Maximov Yu. M. Shernyakov N. V. Kryzhanovskaya A. E. Zhukov E. S. Semenova A. P. Vasil’ev V. M. Ustinov N. N. Ledentsov A. R. Kovsh V. A. Shchukin S. S. Mikhrin A. Lochmann O. Schulz L. Reissmann D. Bimberg 《Semiconductors》2005,39(12):1415-1419
Lasers based on InAs/InGaAs quantum dots grown on metamorphic (In,Ga,Al)As layers deposited by MBE on GaAs substrates exhibited emission near 1.5 μm with a differential quantum efficiency of about 50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm?2 without significant degradation. A maximum continuous-wave output power of 220 mW is obtained. Neither current nor beam filamentation was observed up to the highest pumping levels. 相似文献
5.
V. V. Mamutin O. V. Bondarenko A. P. Vasil’ev A. G. Gladyshev A. Yu. Egorov N. V. Kryzhanovskaya V. S. Mikhrin V. M. Ustinov 《Technical Physics Letters》2007,33(5):384-387
The optical properties of heterostructures comprising InAs/InGaAsN quantum wells in strain-compensated GaAsN/InGaAsN superlattices have been studied. It is demonstrated that, using such superlattices of various design and thickness and with additional InAs monolayer spacers, it is possible to control the wavelength of room-temperature emission from InGaAsN quantum wells within 1.3–1.6 μm without deteriorating the output radiation characteristics, which opens additional prospects for the development of lasers on GaAs substrates for telecommunication applications. 相似文献
6.
A. E. Lapshin Yu. F. Shepelev Yu. I. Smolin E. A. Vasil’eva 《Glass Physics and Chemistry》2008,34(2):182-186
The distribution and structure of tellurium nanoclusters synthesized in crystal channels of the porous silica ZSM-11 are investigated
using the maximum-entropy method and the Rietveld analysis. It is shown that the intercalated tellurium atoms are arranged
in channels of the ZSM-11 zeolite not randomly but in the form of scraps of infinite chains similar to those observed in massive
tellurium. The distances between the nearest neighbor tellurium atoms vary in the range 2.53(4)–2.70(3) ?. The clusters Te4 are formed at the intersections of channels in the structure. These clusters have the form of distorted tetrahedra in which
the tellurium atoms are separated by distances of 2.53(4) and 2.90(4) ?.
Original Russian Text ? A.E. Lapshin, Yu.F. Shepelev, Yu.I. Smolin, E.A. Vasil’eva, 2008, published in Fizika i Khimiya Stekla. 相似文献
7.
A. P. Vasil’ev V. P. Vasyukhno M. E. Netecha V. L. Vysotskii R. I. Kalinin A. A. Sarkisov A. Yu. Kazennov Yu. V. Sivintsev A. M. Chernyaev 《Atomic Energy》2006,101(1):506-511
The radioecological conditions which developed on the territory over the long operating time of the object of the naval fleet
in Guba Andreev are described. The results of an analysis of the sources of the real and potential danger and measures to
prevent dangerous effects for the environment and the workers at the time remediation work is performed are discussed.
__________
Translated from Atomnaya énergiya, Vol. 101, No. 1, pp. 49–55, July, 2006. 相似文献
8.
R. B. Vasil’ev S. G. Dorofeev M. N. Rumyantseva L. I. Ryabova A. M. Gas’kov 《Semiconductors》2006,40(1):104-107
The impedance spectra of nanocrystalline SnO2 ceramics with an average grain size d ranging from 3 to 43 nm were investigated in the frequency range 1–106 Hz at temperatures from 25 to 300°C in a dry oxygen atmosphere. Analysis of the experimental data by the graphoanalytical method made it possible to separate the contributions of grain bulk and grain boundaries to the conductivity. It is shown that the samples investigated can be arbitrarily divided into two groups with respect to the character of their conductivity. For the samples with an average grain size d < 25 nm, the charge transfer processes are almost completely determined by the grain boundaries. In samples with a larger grain size, the contribution of grain bulk to the conductivity is comparable with that of grain boundaries. 相似文献
9.
Yu. S. Gorbunov A. G. Ageev R. V. Vasil’eva B. M. Korol’kov 《Power Technology and Engineering (formerly Hydrotechnical Construction)》2007,41(3):166-170
A system for the direct measurement of steam flow in steam lines after a steam generator, which utilizes a special design
of pneumometric tubes and a computing unit that accounts for variation in steam pressure, has been developed to improve the
quality of water-level regulation in the steam generators of VVéR-1000 power-generating units in the stationary and transitional
modes. The advantage of the pneumometric tubes consists in their structural simplicity, high erosion resistance, and absence
of irrevocable losses during measurement of steam flow. A similar measurement system is used at foreign NPP. The measurement
system in question has been placed in experimental service at the No. 3 unit of the Balakovo NPP, and has demonstrated its
worthiness. This measurement system can also be used to determine steam flow in the steam lines of NPP units with VVéR-1000
and VVéR-440 reactors, and PBMK-1000 power-generating units.
__________
Translated from élektricheskie Stantsii, No. 3, March 2007, pp. 23–26. 相似文献
10.
Effect of Dilution and Porosity on Self-Propagating High-Temperature Synthesis of Silicon Nitride 总被引:3,自引:0,他引:3
Irene G. Cano Inna P. Borovinskaya Miguel A. Rodriguez Vladimir V. Grachev 《Journal of the American Ceramic Society》2002,85(9):2209-2211
Self-propagating high-temperature synthesis is a very easy and low-cost method to synthesize Si3 N4 . The nitriding of silicon powder takes place in a self-sustained regime under high pressures of nitrogen with dilution of silicon by Si3 N4 . In this work effects of dilution and green-mixture porosity on combustion velocity and phase content of reaction products are studied. Results are compared with previous work of other authors and different behaviors are found. An explanation of these behaviors is given. 相似文献