Performance modeling and evaluation of data/voice services in wireless networks

Application-level performance is a key to the adoption and success of the CDMA 2000. To predict this performance in advance, a detailed end-to-end simulation model of a CDMA network is built to include application traffic characteristics, network architecture, network element details using the proposed simulation methodology. We assess the user-perceived application performance when a RAN and a CN adopt different transport architectures such as ATM and IP. To evaluate the user-perceived quality of voice service, we compare the end-to-end packet delay for different vocoder schemes such as G.711, G.726 (PCM), G.726 (ADPCM), and vocoder bypass scheme. By the simulation results, the vocoder bypass scenario shows 30% performance improvement over the others. We also compare the quality of voice service with and without DPS scheduling scheme. We know that DPS scheme keep the voice delay bound even if the service traffic is high. For data packet performance, HTTP v.1.1 shows better performance than that of HTTP v.1.0 due to the pipelining and TCP persistent connection. We may conclude that IP transport technology is better solution for higher FER environment since the packet overhead of IP is smaller than that of ATM for web browsing data traffic, while it shows opposite effect to the small size voice packet in RAN architecture. We show that the 3G-1X EV-DO system gives much better packet delay performance than 3G-1X RTT. The main conclusion is that end-to-end application-level performance is affected by various elements and layers of the network and thus it must be considered in all phases of the development process. Jae-Hyun Kim He received the B.S., M.S., and Ph.D. degrees, all in computer science and engineering, from Hanyang University, Ansan, Korea, in 1991, 1993, and 1996 respectively. In 1996, he was with the Communication Research Laboratory, Tokyo, Japan, as a Visiting Scholar. From April 1997 to October 1998, he was a post-doctoral fellow at the department of electrical engineering, University of California, Los Angeles. From November 1998 to February 2003, he worked as a member of technical staff in Performance Modeling and QoS management department, Bell laboratories, Lucent Technologies, Holmdel, NJ. He has been with the department of electrical engineering, Ajou University, Suwon, Korea, as an assistant professor since 2003. His research interests include QoS issues and cross layer optimization for high-speed wireless communication. Dr. Kim was the recipient of the LGIC Thesis Prize and Samsung Human-Tech Thesis Prize in 1993 and 1997, respectively. He is a member of the Korean Institute of Communication Sciences (KICS), Korea Institute of Telematics and Electronis (KITE), Korea Information Science Society (KISS), and IEEE. Hyun-Jin Lee received the B.S. degree in electrical engineering from Ajou University, Suwon, Korea, in 2004, and is working toward the M.S. degree and Ph. D. degree in electrical engineering at Ajou University. He has been awarded Samsung Human-Tech Thesis Prize in 2004. His research interests QoS, especially network optimization and wireless packet scheduling. He is a member of the KICS. Sung-Min Oh received the B.S. and M. S. degrees in electrical engineering form Ajou University, Suwon, Korea, in 2004, and is working toward the Ph. D. degree in electrical engineering at Ajou University. His research interests QoS performance analysis and 4G network. He is a member of the KICS. Sung-Hyun Cho received his B.S., M.S., and Ph.D. in computer science and engineering from Hanyang University, Korea, in 1995, 1997, and 2001, respectively. From 2001 to 2005, he has been with Samsung Advanced Institute of Technology, where he has been engaged in the design and standardization of MAC and upper layers of B3G, IEEE 802.16e, and WiBro systems. He is currently a MAC part leader in the telecommunication R&D center of Samsung Electronics. His research interests include 4G air interface design, radio resource management, cross layer design, and handoff in wireless systems.     

Electric field-induced concentration and capture of DNA onto microtips

Simple, high-yield concentration of DNA is important for high-throughput genetic analysis and disease diagnosis. Glass-based microfilters are popular but the process requires centrifugation steps with cumbersome chemical processes. As an alternative, a concentration method using an electric field has been explored previously, but with limited efficiency. In this paper, electric field-induced concentration and capture of DNA are studied by using high-aspect-ratio microtips coated with a gold layer. The microtips are immersed longitudinally into a solution of 100???L containing ??-phage DNA. After DNA concentration using an electric field, the microtips are withdrawn from the solution. Under AC- and biased AC fields, DNA is concentrated by electrophoresis (EP), dielectrophoresis (DEP), and electroosmotic flow (EOF). To reduce capillary effects in the withdrawal process, the microtips are coated with positively charged poly-l-lysine (PLL). The pattern of captured DNA is analyzed by fluorescence microscopy. DEP attracts DNA molecules at the edges of microtips, where the highest gradient of electric field exists. EP attracts DNA onto the surface of microtips following the vectors of an electric field. EOF generates vortexes that deliver DNA onto microtips. Using this method, 85% of DNA is captured on the PLL-coated microtips after three sequential captures. The concentration mechanism can potentially facilitate rapid and simple preparation of DNA for downstream analysis.     

Evaluating the strengths of thick aluminum-to-aluminum joints with different adhesive lengths and thicknesses

Composite joints are often the weakest elements in composite structures. In this paper, we propose a modified version of the damage zone theory based on the yield strain ratio. We use this framework to predict failure loads for various adhesive joints. Thick aluminum-to-aluminum joint specimens with eight different adhesive lengths and four adhesive thicknesses were manufactured and tested. The strengths of different adhesive lengths could be predicted to within 15.4% using the damage zone ratio method. In addition, the strengths of joints that feature different adhesive thicknesses were predicted to within 16.3% using the damage zone ratio method.     

Electrochemical characteristics of phosphorus doped Si-C composite for anode active material of lithium secondary batteries

Phosphorus doped silicon-carbon composite particles were synthesized through a DC arc plasma torch. Silane(SiH₄) and methane(CH₄) were introduced into the reaction chamber as the precursor of silicon and carbon, respectively. Phosphine(PH₃) was used as a phosphorus dopant gas. Characterization of synthesized particles were carried out by scanning electron microscopy(SEM), X-ray diffractometry(XRD), X-ray photoelectron spectroscopy(XPS) and bulk resistivity measurement. Electrochemical properties were investigated by cyclic test and electrochemical voltage spectroscopy(EVS). In the experimental range, phosphorus doped silicon-carbon composite electrode exhibits enhanced cycle performance than intrinsic silicon and phosphorus doped silicon. It can be explained that incorporation of carbon into silicon acts as a buffer matrix and phosphorus doping plays an important role to enhance the conductivity of the electrode, which leads to the improvement of the cycle performance of the cell.     

Growth of InGaN HBTs by MOCVD

The design and growth of GaN/InGaN heterojunction bipolar transistors (HBTs) by metalorganic chemical vapor deposition (MOCVD) are studied. Atomic-force microscopy (AFM) images of p⁺InGaN base layers (∼100 nm) deposited under various growth conditions indicate that the optimal growth temperature is limited to the range between 810 and 830°C due to a trade-off between surface roughness and indium incorporation. At these temperatures, the growth pressure must be kept above 300 Torr in order to keep surface pit density under control. An InGaN graded-composition emitter is adopted in order to reduce the number of V-shaped defects, which appear at the interface between GaN emitter and InGaN base and render an abrupt emitter-base heterojunction nearly impossible. However, the device performance is severely limited by the high p-type base contact resistance due to surface etching damage, which resulted from the emitter mesa etch.     

AlxGa1−xN Ultraviolet Avalanche Photodiodes Grown on GaN Substrates

Al_xGa_1-xN (x=0.05) ultraviolet (UV) avalanche photodiodes grown on a GaN substrate are reported. The epitaxial structure was grown by metal-organic chemical vapor deposition on a free-standing bulk GaN substrate having low dislocation density. The growth conditions for Al_xGa_1-xN epitaxial layers on GaN substrates were optimized to achieve improved crystalline and structural quality. With UV illumination at lambda~250 nm, devices with mesa diameters of ~30 mum achieve stable maximum optical gains of ~50 at a reverse bias voltage of ~87 V.     

Stress Mechanism about Field Lightning Surge of High Voltage BJT Based Line Driver for ADSL System

In this paper, we have verified stress root caused by lightning surge in High voltage BJT based line driver of ADSL telecommunication and created failure mechanism. To reproduce damages in Line driver, we have applied STD surge waveform in operating condition, which is specified in IEC-6000-4-5, to component and board level. Visual isolation for Damage root was conducted with Real-time Electrical Stress Analysis (RTESA) utilizing Photon Emission Microscopy (PEM). The surge made with input of Tx output created junction breakdown of amplifier, which is made of HVBJT cells, and also caused current crowding from Vcc (supply voltage). In case of Positive pulse, current crowding was observed from between Collector and Vcc (+)12V. For negative pulse, at between Emitter and Vee (−)12V, current crowding was found. For both cases, device damage level was the same. All of these could be considered as transient latchup phenomenon created in BJT cell. Applying temporary clamping diode to line driver Tx, we have conducted Board level surge injection test. As a result, with the correlation between surge level from component level reproduction test and the one from system level, we have decided field lightning surge damage level and set up line driver protection margin.     

Numerical modeling of combustion processes and pollutant formations in direct-injection diesel engines

The Representative Interactive Flamelet (RIF) concept has been applied to numerically simulate the combustion processes and pollutant formation in the direct injection diesel engine. Due to the ability for interactively describing the transient behaviors of local flame structures with CFD solver, the RIF concept has the capabilities to predict the auto-ignition and subsequent flame propagation in the diesel engine combustion chamber as well as to effectively account for the detailed mechanisms of soot formation, NO_X formation including thermal NO path, prompt and nitrous NO_X formation, and reburning process. Special emphasis is given to the turbulent combustion model which properly accounts for vaporization effects on the mixture fraction fluctuations and the pdf model. The results of numerical modeling using the RIF concept are compared with experimental data and with numerical results of the commonly applied procedure which the low-temperature and high-temperature oxidation processes are represented by the Shell ignition model and the eddy dissipation model, respectively. Numerical results indicate that the RIF approach including the vaporization effect on turbulent spray combustion process successfully predicts the ignition delay time and location as well as the pollutant formation.