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1.
Aluminum nitride ceramics were prepared by sintering with 0–4.8 mass% of Ca3Al2O6 (C3A) as a sintering additive. The transmittance in the range of 260–550 nm increased with increasing amount of C3A. The cathodoluminescence intensity attributed to oxygen-induced defects decreased with increasing amount of C3A. From the results, the increase of the transmittance in the range of 260–550 nm was considered to be related to the decrease of the oxygen-induced defect density.  相似文献   
2.
Ultrasound was applied to a micropipette micromixer to improve dispersion of gas and liquid in a microchannel. Flow visualization using a high-speed camera was performed to examine the effect of ultrasonic irradiation on bubble generation in the microchannel. Basically, nitrogen gas was injected using a (0.5 µm ID) glass micropipette into ethanol flowing in a rectangular (100 µm×200 µm) microchannel on polydimethylsiloxane (PDMS). Gas and liquid flow rates were regulated using mass flow controllers. At aflow condition that is typical of bubbly flow, ultrasound was transmitted into the microchannel using a piezo-electric (PZT) transducer over a range of operating voltages (2 to 200 Vp-p) and frequencies (50 to 60 kHz). Images captured during the action of the PZT transducer indicate that bubble formation is influenced by ultrasound. When subjected to ultrasound above 50 Vp-p and at the resonant frequency of the PZT transducer, bubbles formed that were smaller and closer together, signifying enhanced shearing of the gas at the micropipette tip by the liquid. The observation of gas slugs occurring sooner might be attributed to the coalescence of gas bubbles that became closely spaced.  相似文献   
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4.
New fluoroalkyl end-capped fullerene cooligomers were prepared by the reactions of fluoroalkanoyl peroxides with fullerene and comonomers such as acryloylmorpholine, N,N-dimethylacrylamide and acrylic acid. These fluorinated fullerene cooligomers were easily soluble in water and common organic solvents, and were able to reduce the surface tensions of both water and benzene, quite effectively. Additionally, these fullerene cooligomers were found to form a stable monomolecular film at the air-water interface, and the modified polystyrene surface treated with these cooligomers was shown to have a strong hydrophilicity with good oil repellency.  相似文献   
5.
作为厦门园博会风景园林师园之一,本园以"梦天"为主题,结合东端开阔的水面条件,以月、桂、石为材,以天气的变化、月亮的位置、植物的变化、庭园本身的变化为主轴进行设计,使其成为一座可持续的庭园.  相似文献   
6.
The pulsed KrF excimer laser annealing of silicon films for solar cell with EBEP-CVD and LP-CVD was studied theoretically and experimentally. Three-dimensional thermal diffusion equation for microcrystalline and amorphous silicon was solved by using the finite difference methods. The results of our heat-flow simulation of laser re-crystallization in a laser irradiation with 50 ns pulse duration almost agree with the experimental results in re-crystallization depth of 0.7 μm for microcrystalline silicon (EBEP-CVD) and 0.4 μm for amorphous silicon (LP-CVD) in a single pulse excimer laser annealing.  相似文献   
7.
High-performance carbon counter electrode for dye-sensitized solar cells   总被引:1,自引:0,他引:1  
Here, we reported that a new carbon electrode prepared with an activated carbon was superior to a Pt sputtered electrode as the counter electrode of dye-sensitized solar cells. The photovoltaic performance was largely influenced by the roughness factor of carbon electrode. The open-circuit voltage increased by about 60 mV using the carbon counter electrode compared to the Pt counter electrode because of positive shift of the formal potential for I3/I couple.  相似文献   
8.
N(alpha)-Phthalimidoglutarimide (thalidomide), 2-(2,6-diisopropylphenyl)-1H-isoindole-1,3-dione (PP-33) and its 4,5,6,7-tetrafluoro derivative (FPP-33) augmented 12-O-tetradecanoylphorbol 13-acetate-induced production by human leukemia HL-60 cells of both tumor necrosis factor alpha (TNF-alpha) mRNA and secreted TNF-alpha protein. Intracellular TNF-alpha protein production was increased to a lesser extent.  相似文献   
9.
BACKGROUND: We determined the types and distribution of glycosaminoglycans (GAGs) and collagens, in anterior capsular opacification after endocapsular phacoemulsification and aspiration (ECPEA) and intraocular lens implantation. METHODS: Opacified anterior capsules were removed from human eyes after ECPEA. Immunohistochemical staining was performed to determine GAGs with monoclonal antibodies to chondroitin, chondroitin-4-sulfate (C4S), chondroitin-6-sulfate (C6S), dermatan sulfate (DS), and keratan sulfate (KS); collagens with monoclonal antibodies to types I, II, and III collagens; and cellular characteristics with monoclonal antibodies to vimentin, desmin, alpha-smooth muscle actin, and cytokeratin. Decorin mRNA and type I collagen mRNA were detected by in situ hybridization. RESULTS: In the capsules, the C6S, DS, KS, and types I and III collagens were similar to the chemical components found at the adhesion site of the anterior and posterior capsules after extracapsular cataract extraction, and cellular components contained vimentin, desmin, alpha-smooth muscle actin, cytokeratin, decorin mRNA, and type I collagen mRNA. CONCLUSIONS: The GAGs and collagens in opacified anterior capsule after ECPEA were similar to those found during wound healing, although KS is present in normal anterior segment tissue during development and only in the cornea postnatally. These chemical components may be produced by myofibroblast-like cells presumably transformed from lens epithelial cells.  相似文献   
10.
The 35 nm gate length CMOS devices with oxynitride gate dielectric and Ni salicide have been fabricated to study the feasibility of higher performance operation. Nitrogen concentration in gate oxynitride was optimized to reduce gate current I/sub g/ and to prevent boron penetration in the pFET. The thermal budget in the middle of the line (MOL) process was reduced enough to realize shallower junction depth in the S/D extension regions and to suppress gate poly-Si depletion. Finally, the current drives of 676 /spl mu/A//spl mu/m in nFET and 272 /spl mu/A//spl mu/m in pFET at V/sub dd/=0.85 V (at I/sub off/=100 nA//spl mu/m) were achieved and they are the best values for 35 nm gate length CMOS reported to date.  相似文献   
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