Sol–Gel‐Derived High‐Performance Stacked Transparent Conductive Oxide Thin Films

Single‐ and multi‐layer transparent conductive oxide (TCO) thin films exhibiting high performance, good packing density and low surface/interface roughness are deposited on silica glass substrates by the sol–gel method. The crystal and microstructural properties of the TCO thin films are evaluated as an alternate to films prepared by ultra‐high vacuum deposition. Tin‐doped indium oxide (ITO) thin films produced using a two‐step drying process showed low surface roughness because of dense packing structure not only horizontal but also vertical directions. As a result, electrical conductivity, carrier concentration, carrier mobility, and optical transmittance of 2.3 × 10³ S/cm, 8 × 10²⁰ cm^?3, 18 cm²/Vs, and over 98% at 500 nm, respectively, were achieved. A multilayer ZnO/ITO stacked structure was also fabricated using the sol–gel process. Our findings suggest that solution‐based methods show promise as an alternative to existing ultra‐high vacuum methods to fabricate TCO thin films.     

Criteria for versatile GaN MOVPE tool:high growth rate GaN by atmospheric pressure growth

Growth rate has a direct impact on the productivity of nitride LED production.Atmospheric pressure growth of GaN with a growth rate as high as 10μm/h and also Al_0.1Ga_0.9N growth of 1μm/h by using 4 inch by 11 production scale MOVPE are described.XRD of（002） and（102） direction was 200 arcsec and 250 arcsec, respectively.Impact of the growth rate on productivity is discussed.     

Fracture properties of X-phase precipitation hardened ferritic stainless steel and ductility improvement of the steel

The mechanical properties of Fe-13 wt% Cr-2 wt% Mo-2.5 wt% Ti alloy were examined by tensile tests with respect to its fracture mechanism. In order to improve the properties, 1 wt% Nb was added and its effects were examined. In the temperature range, room temperature to 500° C, the fracture characteristics of the alloys are mainly governed by the characteristics of the x-phase precipitation. Fracture elongation is a function of (C/r)_1/2 where C is the radius of the x-phase and r is its mean spacing. 1 wt% Nb addition is an effective method for improving the ductility without a decrease in the strength of the alloy.     

Studies on solder bump electromigration in Cu/Sn–3Ag–0.5Cu/Cu system

This paper aims to understand the solder bump electromigration phenomenon in the Cu/Sn–3Ag–0.5Cu/Cu system. A temperature of 453 K with a current density of 10 kA/cm² was applied. A void nucleated at the highest current density point at the cathode. As the void grew along the cathode side, a solder depletion occurred on the opposite side of the electron entry point, resulting in an open failure. A unique purposely-designed 3D model simulation methodology provides a good understanding of the void nucleation and growth behavior. The temperature of the solder joint during the electromigration test was measured successfully by the resistance change in the junction line between the two joints.     

Variations in polymeric structure of ferroelectric poly(vinylidene fluoride) films during annealing at various temperatures

To clarify the thermal degradation mechanisms of uniaxially drawn poly(vinylidene fluoride) (PVDF) films, variations due to annealing in the polymeric structures of the films were investigated using the small‐angle X‐ray scattering (SAXS) and Fourier transform infrared (FTIR) spectroscopy. The films were composed of lamellar crystals that were stacked perpendicular to the stretch direction. Although the crystallinity of the films decreased during annealing in the temperature range above the preannealing temperature, the lamellar structure was maintained even after the annealing process. There are two kinds of irreversible relaxation mechanisms during the annealing process of the films, including both a decrease in crystallinity within the lamellae and also thickening of the lamellae. A significant lamella thickening effect was observed when the films were annealed above ～ 100°C. FTIR spectra suggested some disordered structures are developed during thickening of the lamellae. Furthermore, a long‐range periodic structure was formed in the films that were annealed above the melting temperature of PVDF. The polymeric structures formed during the fabrication process (including high‐order structures and disorders in molecular conformation) were clarified as having a significant influence on the annealing behavior of ferroelectric PVDF films. © 2008 Wiley Periodicals, Inc. J Appl Polym Sci, 2009     

Arsenic behavior in paddy fields during the cycle of flooded and non-flooded periods

The behavior of As in paddy fields is of great interest considering high As contents of groundwater in several Asian countries where rice is the main staple. We determined the concentrations of Fe, Mn, and As in soil, soil water, and groundwater samples collected at different depths down to 2 m in an experimental paddy field in Japan during the cycle of flooded and non-flooded periods. In addition, we measured the oxidation states of Fe, Mn, and As in situ in soil samples using X-ray absorption near-edge structure (XANES) and conducted sequential extraction of the soil samples. The results show that Fe (hydr)oxide hosts As in soil. Arsenic in irrigation waters is incorporated in Fe (hydr)oxide in soil during the non-flooded period, and the As is quickly released from soil to water during the flooded period because of reductive dissolution of the Fe (hydr)oxide phase and reduction of As from As(V) to As(III). The enhancement of As dissolution by the reduction of As is supported by high As/Fe ratios of soil water during the flooded period and our laboratory experiments where As(III) concentrations and As(III)/As(V) ratios in submerged soil were monitored. Our work, primarily based on data from an actual paddy field, suggests that rice plants are enriched in As because the rice grows in flooded paddy fields when mobile As(III) is released to soil water.     

Whisker Growth Behavior of Sn and Sn Alloy Lead-Free Finishes

Sn whisker growth behavior, over periods of time up to 10,080 h at room temperature, was examined for Sn and Sn-Cu, Sn-Ag, Sn-Bi, and Sn-Pb coatings electroplated on copper in 2 μm and 5 μm thicknesses to understand the effects of the alloying elements on whisker formation. Sn-Ag and Sn-Bi coatings were found to significantly suppress Sn whisker formation compared with the pure Sn coatings, whereas whisker growth was enhanced by Sn-Cu coatings. In addition, annealed Sn and Sn-Pb coatings were found to suppress Sn whisker formation, as is well known. Compared with the 2-μm-thick coatings, the 5-μm-thick coatings had high whisker resistance, except for the Sn-Cu coating. Whisker growth was correlated with coating crystal texture and its stability during storage, crystal grain microstructure, and the formation of intermetallic compounds at Sn grain boundaries and substrate–coating interfaces.     

Study of point defects in CuGaSe2 single crystals by means of electron paramagnetic resonance and photoluminescence

Point defects in CuGaSe₂ single crystals as vacancies V_Se, V_Cu and defect pair (2V_Cu⁻+Ga_Cu²⁺) have been studied by means of electron paramagnetic resonance (EPR) and low-temperature photoluminescence (PL). EPR hyperfine structure has been found at temperatures as low as 1.45–45 K and the temperature dependence of EPR line is discussed. Photo-EPR spectrum reveals optically active behavior of intrinsic point defects in CuGaSe₂ crystals. Three bands of PL emission show different origins and two low-energy bands at 1.55 and 1.58 eV have been found to be steady despite H₂-, O₂- and Se₂-annealings. The experimental data added with electric characterization in accordance with the used annealings and together with a defect physics model allow consideration of the point defect ensemble in CuGaSe₂ in more detail.