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1.
Takauchi H. Tamura H. Matsubara S. Kibune M. Doi Y. Chiba T. Anbutsu H. Yamaguchi H. Mori T. Takatsu M. Gotoh K. Sakai T. Yamamura T. 《Solid-State Circuits, IEEE Journal of》2003,38(12):2094-2100
We describe a CMOS multichannel transceiver that transmits and receives 10 Gb/s per channel over balanced copper media. The transceiver consists of two identical 10-Gb/s modules. Each module operates off a single 1.2-V supply and has a single 5-GHz phase-locked loop to supply a reference clock to two transmitter (Tx) channels and two receiver (Rx) channels. To track the input-signal phase, the Rx channel has a clock recovery unit (CRU), which uses a phase-interpolator-based timing generator and digital loop filter. The CRU can adjust the recovered clock phase with a resolution of 1.56 ps. Two sets of two-channel transceiver units were fabricated in 0.11-/spl mu/m CMOS on a single test chip. The transceiver unit size was 1.6 mm /spl times/ 2.6 mm. The Rx sensitivity was 120-mVp-p differential with a 70-ps phase margin for a common-mode voltage ranging from 0.6 to 1.0 V. The evaluated jitter tolerance curve met the OC-192 specification. 相似文献
2.
Keita Ikeue Shingo Ando Tomohiro Mitsuyama Yusuke Ohta Keishi Arayama Akiko Tsutsumi Masato Machida 《Topics in Catalysis》2008,47(3-4):175-180
Lanthanide-based oxysulfides and sulfide, LnTaO3.5S0.5, Ln10OS14 (Ln = La, Pr, Nd, Sm) and La4In5S13, were successively synthesized by sulfurization in a flowing H2S. The sulfurization decreased the band-gap energies from >4 eV to <3eV, because of the formation of occupied S3p orbitals
on the top of valence band. In accordance with the small band gap, the H2 evolution from a 0.01 M Na2S and 0.01 M Na2SO3 solution system was observed under irradiation of light up to >500 nm. The rate of H2 evolution under light irradiation of >500 nm increased in the order of Ni/LaTaO3.5S0.5 < Ru/La10OS14 < Pt/La4In5S13. 相似文献
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Using a newly devised model of dural sinus occlusion, we investigated the pathophysiology of venous haemorrhage as well as venous circulatory disturbance. The superior sagittal sinus (SSS) and diploic veins (DV) were occluded in 16 cats. Intracranial pressure (ICP), cerebral blood volume (CBV) and regional cerebral blood flow (rCBF) were measured for 12 hours after the occlusion. At the end of the experiment, cerebral water content was estimated. In another 8 cats additional occlusions of cortical veins were carried out. In both groups, the blood-brain barrier permeability was evaluated with Evans blue or horseradish peroxidase. The SSS and DV occlusion produced a significant increase in ICP and CBV concomitant with a significant decrease in rCBF. Cerebral water content also increased significantly. However, there was no transition of Evans blue and horseradish peroxidase through the cerebral vessels, and no haemorrhages could be observed. In contrast, the additional occlusion of cortical veins produced haemorrhagic infarctions with Evans blue extravasation in 6 out of the 8 cats. These data suggest that dural sinus occlusion may lead to an increase in CBV and cerebral water content resulting in intracranial hypertension and decreased rCBF. The brain oedema in this model seemed to be mainly hydrostatic oedema, and might also be contributed by cytotoxic oedema. The additional occlusion of cortical veins might be essential in the development of haemorrhage in this model, and the blood-brain barrier was also disrupted in these areas. 相似文献
6.
Keishi Sakamoto Atsushi Kasugai Masaki Tsuneoka Koji Takahashi Yukiharu Ikeda Tsuyoshi Imai Takashi Nagashima Mitsuru Ohta Tsuyoshi Kariya Kenichi Hayashi Yoshika Mitsunaka Yosuke Hirata Yasuyuki Itoh Yukio Okazaki 《Journal of Infrared, Millimeter and Terahertz Waves》1997,18(9):1637-1654
A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at PRF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at PRF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window. 相似文献
7.
Tohru Morii Hiroyuki Hamada Muriel Desaeger Akihiko Gotoh Atsushi Yokoyama Ignaas Verpoest Zen-ichiro Maekawa 《Composite Structures》1995,32(1-4):133-139
This study deals with the impact property and damage tolerance of matrix hybrid composite laminates with different laminate constitution. The matrix hybrid composite laminates consisted of the laminae with a conventional epoxy resin and the laminae with a flexible epoxy resin modified from the conventional resin to avoid the interlaminar delamination. The impact energy absorption ratio greatly depended on the matrix resin placed at the impact face. The energy absorption was almost constant if the conventional resin was placed at the impact surface layer, while it increased exponentially with the increasing fraction of the flexible resin if the flexible resin was placed at the impact face. The impact energy was absorbed by the damage development and propagation in the laminate with conventional resin laminae as the impacted face, while it was absorbed by both the recoverable deformation of the flexible resin and the damage propagation in the laminate with flexible resin laminae as the impacted face. 相似文献
8.
Mochizuki K. Terano A. Momose M. Taike A. Kawata M. Gotoh J. Nakatsuka S. 《Electronics letters》1994,30(23):1984-1985
Ohmic contacts of Au/Pd/Ti/Ni to p-ZnTe show a minimum specific contact resistance of 10-6 Ωcm2 for a p-type doping level of 3×1019 cm-3 and at an annealing temperature of 300°C. The Ni and Ti layers are very effective in improving the electrical properties of these contact 相似文献
9.
Shukuri S. Kure T. Kobayashi T. Gotoh Y. Nishida T. 《Electron Devices, IEEE Transactions on》1994,41(6):926-931
A new semi-static complementary gain cell for future low power DRAM's has been proposed and experimentally demonstrated. This gain cell consists of a write-transistor and its opposite conduction type read-transistor with a heating gate as a storage node which causes a shift in the threshold voltage. This gain cell provides a two orders of magnitude larger cell signal output and higher immunity to noise on the bitlines when compared with a conventional one-transistor DRAM cell without increasing the storage capacitance even at a supply voltage of 0.8 V. The 0.87 μm2 cell size is achieved by using a 0.25 μm design rule with a polysilicon thin-film transistor built in the trench and phase shifted i-line lithography 相似文献
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