Fundamental Evaluation of Power Supply and Rectifiers for Wireless Power Transfer Using Magnetic Resonant Coupling

This paper provides a fundamental analysis of a power supply and rectifiers for wireless power transfer using magnetic resonant coupling (MRC). MRC enables efficient wireless power transfer over middle‐range transfer distances. MRC for wireless power transfer should operate at a high frequency in the industry science medical band, such as 13.56 MHz, because the size of the transfer device decreases at higher transfer frequencies. Therefore, the output frequency of the power supply on the transmitting side should be 13.56 MHz. In addition, the rectifier on the receiving side is operated at a high frequency. This paper focuses on the reflected power in the power supply and rectifiers. Thus, the parametric design method is clarified for the power supply, including a low‐pass filter to match the output, the impedance of the power supply with the characteristic impedance of the transmission line. In addition, the effects on the rectifiers of silicon carbide and gallium nitride diodes are confirmed by performing an experiment and a loss analysis.     

Tuning-current splitting network for three-section DBR lasers

A simple current-splitting network for DBR-laser frequency tuning is proposed that distributes a single control current among two tuning sections and can adjust the current distribution without yielding impedance mismatching. The nonlinear characteristics of the tuning sections realise the non-proportional current splitting suitable for continuous tuning; 470 GHz (3.8 nm) tuning range is achieved     

Studies on chitin. IX. Crosslinking of water-soluble chitin and evaluation of the products as adsorbents for cupric ion

Water-soluble chitin was successfully crosslinked to varying extents with glutaraldehyde in homogeneous aqueous solutions to improve the properties as an adsorbent for metal cations, and the effects of crosslinking were discussed. Complete insolubilization was achieved with the fivefold excess aldehyde, but, in terms of adsorptivity of Cu²⁺, the chitin crosslinked at an aldehyde/amino group ratio of 1.0 was found to exhibit remarkable capacity and was much superior to others. The desorption of Cu²⁺ from the adsorption complex was also attained effectively at pH 2.0. These results indicated that the loose crosslinking was quite simple and efficient to produce high capacity adsorbents for practical use. Thermal behavior of the crosslinked chitin was examined by TMA and TGA; a softening phenomenon was observed at 145°C.     

Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.     

The importance of electrochemistry-related etching in thegate-groove fabrication for InAlAs/InGaAs HFETs

For the first time, the surface metal on nonalloyed ohmic electrodes is found to significantly change the profiles of gate grooves, when resist openings are employed to monitor drain current during wet-chemical gate recess for sub-micron InAlAs/lnGaAs heterojunction field-effect transistors (HFETs). The surface metal of Ni enhances the etching rate in comparison with that in the absence of electrodes by a factor of 4 and 10, laterally and vertically, which is favorable to fabricate deep gate grooves with small side etching. The Pt surface metal, however, leads to preferential etching of InGaAs over InAlAs, which can be useful to realize large side etching. The existence of an electrochemistry-related etching component, which arises when the ohmic electrodes are present during recess etching, is considered to be responsible for these behaviors     

Design and characteristics of InGaAs/InP composite-channel HFET's

A design for composite-channel structures consisting of an InGaAs channel and an InP subchannel for use as heterostructure field-effect transistors is presented for the first time. This novel channel structure takes advantage of both the high drift velocity and low impact ionization of InP at high electric fields as well as the high electron mobility of InGaAs at low electric fields. It is shown that the doping density of the InP subchannel is the key parameter to realize the advantages of the composite channel. A very high transconductance of 1.29 S/mm and a current gain cutoff frequency of 68.7 GHz are achieved with 0.6 and 0.7 /spl mu/m gates, respectively. The average velocity of electrons in the composite channel is 2.9/spl times/10/sup 7/ cm/s. The devices have no kink phenomena in their I-V characteristics possibly due to low impact ionization in the InP subchannel.<>     

Inhibitory effect of alpha-tocopherol on methemoglobin formation by nitric oxide in normal and acatalasemic mouse hemolysates

The inhibitory effect of alpha-tocopherol on methemoglobin formation in normal and acatalasemic mice was studied by exposing their hemolysates to nitric oxide. Methemoglobin formation in normal and acatalasemic mouse hemolysates exposed to nitric oxide were significantly inhibited by the addition of alpha-tocopherol at final concentrations ranging from 1.2 to 5.8 mM. Negative correlations were observed between the logarithm of alpha-tocopherol concentration and the methemoglobin formation. The formation of methemoglobin in acatalasemic mouse hemolysates was greater than that in normal mouse hemolysates with or without added alpha-tocopherol. The methemoglobin formation in acatalasemic mice was also significantly inhibited by addition of more than 500 units/ml of catalase, and the methemoglobin formation in normal and acatalasemic mice was also inhibited with sodium diethyldithiocarbamate at a final concentration of 1 M.     

Changes in cerebral blood flow and oxygen metabolism related to magnetic resonance imaging white matter hyperintensities in Alzheimer's disease

We studied changes in cerebral perfusion and oxygen metabolism to elucidate the pathophysiological nature and clinical significance of white matter hyperintensities in Alzheimer's disease (AD). METHODS: Sixteen AD patients (age 71.6 +/- 3.1 yr) whose T2-weighted MR images showed white matter hyperintensities, and 16 age-matched AD patients (age 71.0 +/- 4.3 yr) without white matter hyperintensities were compared. Regional cerebral blood flow (CBF), oxygen metabolism (CMRO2) and oxygen extraction fraction (OEF) were measured by using (15)O steady-state method and PET. RESULTS: There was no significant difference in cognitive impairment between the two groups. Compared to the patients without white matter hyperintensities, those with them had significantly low CBF values and significantly high OEF values in all cortical and white matter regions. However, there were no significant differences in CMRO2 values between the two groups. Severity of white matter hyperintensities correlated with the mean cortical and mean white matter OEF. CONCLUSION: In AD patients, white matter hyperintensities on T2-weighted MR images represent ischemic changes in which oxygen metabolism and function are fairly compensated. These changes are not disease-specific but are age-associated coincidences, as in normal aging with or without vascular risk factors.     

Mechanical alloying in the Al-Bi alloy system

Mechanical alloying (MA) was carried out to investigate the MA behaviour of the immiscible Al-10, 30 at % Bi alloys. After the MA processing, the Al and Bi were finely and homogeneously alloyed. The Bi crystallite size decreased to 25 nm and 30 nm in the Al-10 at % Bi and Al-30 at % Bi alloys, respectively. By increasing the MA time, the hardness increased up to a value of 80 H _v, which is larger than that obtained from the rule of mixtures. The lattice parameter of Bi decreased by about 0.27%, which shows the formation of a non-equilibrium hcp Bi super-saturated solid solution. The extended solubility of Al in Bi was 1.9% in the Al-30 at % Bi alloy. Due to the extended solubility, depression of the melting temperature of hcp Bi was confirmed in the mechanically alloyed Al-Bi alloys. The maximum depression in the temperature was about 10 K. The measured values corresponded well with those estimated from the extrapolation of the solidus line.