Real structure of partially ordered crystals

Partial order in crystals is a frequently observed phenomenon in minerals and synthetic materials. The partially ordered structures are characterized by low-dimensional order of the real structure. In the case of 1D structures, the ordered units can be described as rods; 2D structures contain ordered layers. The disorder of the real structures is indicated by prominent diffuse scattering in the diffraction patterns of single crystals. No simple method for the quantitative analysis of the diffuse scattering exists, therefore the determination of essential characteristics of the structures is complicated. However, the determination can be facilitated using a combination of different methods, including electron microscopy, computation and X-ray diffraction.     

Study of Linkage between Glutathione Pathway and the Antibiotic Resistance of Escherichia coli from Patients’ Swabs

In this work, we focused on the differences between bacterial cultures of E. coli obtained from swabs of infectious wounds of patients compared to laboratory E. coli. In addition, blocking of the protein responsible for the synthesis of glutathione (γ-glutamylcysteine synthase—GCL) using 10 mM buthionine sulfoximine was investigated. Each E. coli showed significant differences in resistance to antibiotics. According to the determined resistance, E. coli were divided into experimental groups based on a statistical evaluation of their properties as more resistant and more sensitive. These groups were also used for finding the differences in a dependence of the glutathione pathway on resistance to antibiotics. More sensitive E. coli showed the same kinetics of glutathione synthesis while blocking GCL (K_m 0.1 µM), as compared to non-blocking. In addition, the most frequent mutations in genes of glutathione synthetase, glutathione peroxidase and glutathione reductase were observed in this group compared to laboratory E.coli. The group of “more resistant” E. coli exhibited differences in K_m between 0.3 and 0.8 µM. The number of mutations compared to the laboratory E. coli was substantially lower compared to the other group.     

The microstructure and electrical conductivity of mixed-valence TlIn(4)S(5)Cl quaternary compound micro- and nanowires

Quaternary mixed-valence compound TlIn(4)S(5)Cl micro-?and nanowires are prepared by partial substitution of chalcogen with halogen starting from a stoichiometric mixture of TlCl, In?and S. Their electrical conductivity and gas sensitivity properties are investigated by using standard four-terminal systems. The specific nanowire resistivity is about 10(7)?Ω?cm and corresponds to the value of a typical undoped semiconductor in air. This resistivity is, however, extremely sensitive to NO(2) (sensitivity about 150) or NH(3), with a rapid response of about 2?s and recovery times. This phenomenon is supposed to be particularly important for future nanodevice applications.