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1.
Porous alumina with a highly textured microstructure was fabricated by pulse electric current sintering (PECS) using alumina platelets. Highly oriented porous alumina with a porosity of 3%–50% was obtained by a pressure-controlled method of PECS. The properties of the highly textured porous alumina were measured in two directions. The nitrogen gas permeance and thermal conductivity at room temperature were higher in the direction along the platelet length due to the higher continuity of pores and the connectivity of alumina platelets, respectively. The anisotropy of the thermal conductivity at room temperature was investigated and explained by the effect of grain size of platelets as well as morphology and orientation of pores. The bending strength was higher with the loading direction along the platelet thickness. The thermal shock strength was clearly different in the two directions. The difference in the thermal shock strength was investigated by the measurement of properties and thermal stress analysis.  相似文献   
2.
Using an electromagnetic levitation facility with a laser heating unit, silicon droplets were highly undercooled in the containerless state. The crystal morphologies on the surface of the undercooled droplets during the solidification process and after solidification were recorded live by using a high-speed camera and were observed by scanning electron microscopy. The growth behavior of silicon was found to vary not only with the nucleation undercooling, but also with the time after nucleation. In the earlier stage of solidification, the silicon grew in lateral, intermediary, and continuous modes at low, medium, and high undercoolings, respectively. In the later stage of solidification, the growth of highly undercooled silicon can transform to the lateral mode from the nonlateral one. The transition time of the sample with 320 K of undercooling was about 535 ms after recalescence, which was much later than the time where recalescence was completed.  相似文献   
3.
A mullite (3Al2O3·2SiO2) sample has been levitated and undercooled in an aero-acoustic levitator, so as to investigate the solidification behavior in a containerless condition. Crystal-growth velocities are measured as a function of melt undercoolings, which increase slowly with melt undercoolings up to 380 K and then increase quickly when undercoolings exceed 400 K. In order to elucidate the crystal growth and solidification behavior, the relationship of melt viscosities as a function of melt undercoolings is established on the basis of the fact that molten mullite melts are fragile, from which the atomic diffusivity is calculated via the Einstein-Stokes equation. The interface kinetics is analyzed when considering atomic diffusivities. The crystal-growth velocity vs melt undercooling is calculated based on the classical rate theory. Interestingly, two different microstructures are observed; one exhibits a straight, faceted rod without any branching with melt undercoolings up to 400 K, and the other is a feathery faceted dendrite when undercoolings exceed 400 K. The formation of these morphologies is discussed, taking into account the contributions of constitutional and kinetic undercoolings at different bulk undercoolings.  相似文献   
4.
Thermal reaction of titanium tetraisopropoxide and tetraethyl orthosilicate in 1,4-butanediol afforded nanocrystalline silica-modified titanias having large surface area and superior thermal stability. In this study, the thus-obtained silica-modified titanias were treated in an NH3 flow at high temperatures, and their physical and photocatalytic properties were investigated. Compared with NH3-treated TiO2 without silica modification, the NH3-treated silica-modified titanias showed a stronger absorption in the visible region (400–500 nm) and had a larger peak at 396 eV in the N 1s XPS spectrum. These results indicate that a larger amount of nitrogen was stably doped in the silica-modified titania. The obtained products exhibited a high photocatalytic activity for degradation of Rhodamine B and decomposition of acetaldehyde under visible light irradiation. Electronic supplementary material The online version of this article (doi:) contains supplementary material, which is available to authorized users.  相似文献   
5.
The recent increase in the demand for power in urban areas has caused changes in the way power is supplied. Underground distribution systems have been introduced for convenience in urban areas and to prevent injuries in case of a crisis. As a result, many new types of power cables are being used. One type, XPLE cables (also called CV cables) have been rapidly taking the place of conventional cables such as OF or SL cables since the 1960s because of their relatively easy installation and maintainability. However, distribution cables used under severe environmental conditions deteriorate rapidly (due mainly to water treeing), and some cables experience insulation breakdown. Therefore, many diagnostic methods have been developed, though they have not been very effective. By combining methods, a high reliability can be achieved in comparison to the use of a single method. However, processing the data is difficult for on-site personnel, so many experts are required. But there is a lack of qualified experts, hence we have turned to the development of expert systems.  相似文献   
6.
Der f 2 is a major mite allergen composed of 129 amino acid residues. To determine the major epitopes on Der f 2 recognized by human IgE antibodies, artificial mutations were introduced to Der f 2 protein. The IgE-binding activity of Der f 2 was significantly decreased by deletion of 10 amino acids at the N-terminus or nine amino acids at the C-terminus. Site-directed mutagenesis with a single amino acid replacement by Ala or Leu in both N- and C-terminal regions as well as a central portion was performed to generate 42 single-site mutations. Amino acid replacement around a disulfide bond of Cys8-Cys119 caused a marked decrease in IgE-binding activity. Furthermore, a distinct decrease in IgE-binding was also caused by Ala-substitution close to a disulfide bond of Cys73-Cys78 and by mutations of a few charged residues. From these results, it was concluded that the two disulfide-forming regions of Der f 2 and several charged residues are important for forming major epitope structures recognized by human IgE antibodies.  相似文献   
7.
Ormosil coatings of high hardness   总被引:3,自引:0,他引:3  
Organically modified silicates (ormosils) of two systems were coated on polyethyleneterephthalate (PET) substrates. One was the tetraethoxysilane (TEOS)-vinyltriethoxysilane (VTES) system and the other was the TEOS-tetraisopropyltitanate (TIPT)-VTES system. The reactions among the alkoxides were examined by liquid state 29Si nuclear magnetic resonance (NMR) spectroscopy. The chemical bonds between TEOS and VTES, between TEOS and TIPT, and between VTES and TIPT are shown in the spectra and the reaction schemes are proposed. Vickers hardnesses of the ormosil coatings were obtained by using the models developed by Jönsson and Hogmark, and the theoretical models developed by the authors were valuable to predict the hardness values. The ormosil coatings obtained in the present study were much harder than the hardest transparent plastics, and thus are very useful for hard or protective coatings on organic polymers.  相似文献   
8.
Ti wire electrodes were immersed in acidic solutions containing H2SO4 and HCl of various concentrations at 353 K to evaluate corrosion rate by measurement of electric resistance change (resistometry). Addition of hydrochloric acid to sulphuric acid solution promoted depassivation of Ti. After depassivation, the immersion potential dropped to the hydrogen evolution potential and a hydride layer was formed on the surface. The hydride layer dissolved continuously in the acidic solution. SEM observation showed that Ti wires dissolved almost uniformly in the early stage and that the dissolution then trace became irregular due to nonuniform growth of the hydride layer. Dissolution rate of a Ti wire was estimated almost accurately by resistometry.  相似文献   
9.
10.
Selective epitaxial Si with a high arsenic concentration of 2.2×1019 atoms/cm3 was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.  相似文献   
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