Contribution of metal vapor mass at periphery part of pulsed arc to electromagnetic force in weld pool

The arc welding has been used in various welding methods because it is inexpensive and high in strength after welding. However, it is a problem that accidents such as collapse of the bridge occur because of the welding defects. The welding of low cost and high productivity is required without the welding defects. The pulsed TIG welding is inexpensive and capable of high‐quality welding. The electromagnetic force contributing to penetration changes because the transient response of arc temperature and iron vapor generated from anode occurs. However, the analysis of pulsed TIG welding with metal vapor has been elucidated only metal vapor concentration near anode with transient phenomenon and heat flux. Thus, the theoretical elucidation of penetration depth with control factor has not been researched. In this paper, the contribution of metal vapor mass at the periphery part of pulsed arc to the electromagnetic force in the weld pool is elucidated. As a result, the iron vapor mass at periphery part decreased with increasing the frequency. The iron vapor was stagnated at axial center within one cycle. The electromagnetic force to the penetration depth direction in weld pool increased at axial center. Therefore, the metal vapor mass at periphery part plays an important role for the electromagnetic force increment at axial center.     

Structure and electrical characteristics of Ce4+-doped Ba2In2O5

The In-site of Ba₂In₂O₅ with Brownmillerite structure was partially substituted for Ce⁴⁺ ions in order to examine the doping effect on the order-disorder transition. Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.1, 0.2, 0.3, 0.5, 1.0, and 1.5) were prepared by solid state reaction. X-Ray diffraction analyses of these powder samples demonstrated that Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.1 and 0.2) possesses Brownmillerite structure. With increasing content of Ce⁴⁺ ion the crystal system of Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.3, 0.5, and 1.0) changed to cubic perovskite structure above the order-disorder transition temperature of Ba₂In₂O₅. Arrhenius plots of the electrical conductivities of Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.2, 0.3, and 1.0) exhibited no discontinuity. These compounds had high transference numbers of oxide ion above 973 k.     

Direct evidence of high DNA binding activity of transcription factor AP-1 in rheumatoid arthritis synovium

Green fluorescent protein (GFP) is increasingly being used in plant biology from the cellular level to whole plant level. At the cellular level, GFP is being used as an in vivo reporter to assess frequency of transient and stable transformation. GFP has also proven to be an invaluable tool in monitoring trafficking and subcellular localization of protein. At the organ level and up, many exciting applications are rapidly emerging. The development of brighter GFP mutants with more robust folding properties has enabled better macroscopic visualization of GFP in whole leaves and plants. One interesting example has been the use of GFP to monitor virus movement in and among whole plants. GFP is also emerging as a powerful tool to monitor transgene movement and transgenic plants in the field. In a proof-of-concept study, tobacco was transformed with a modified version of the GFP gene controlled by a constitutive (35S) promoter. GFP expression in progeny plants ranged from 0% to 0.5%, and approximately 0.1% GFP was the minimal amount needed for unambiguous macroscopic detection. GFP is the first truly in vivo reporter system useful in whole plants, and we project its usefulness will increase even further as better forms of GFP genes become available.     

Cell density-dependent DNA fragmentation and its suppression by heparin in primary culture of adult rat hepatocytes

We show here that the internucleosomal DNA fragmentation, which is a biochemical hallmark of apoptosis, was induced in a cell density-dependent manner in primary culture of adult rat hepatocytes. This DNA fragmentation could be suppressed by a gene expression inhibitor, indicating the active nature of this process. Moreover, the viability changes in high and low cell density cultures showed a tendency corresponding with the incidence of the DNA fragmentation in them. These results suggest that in hepatocytes there may be a cell density-dependent apoptosis mechanism. In this report, we also show that heparin could suppress this DNA fragmentation with high specificity, and the cell death to some extent.     

Direct observation of the crystal-growth transition in undercooled silicon

Using an electromagnetic levitation facility with a laser heating unit, silicon droplets were highly undercooled in the containerless state. The crystal morphologies on the surface of the undercooled droplets during the solidification process and after solidification were recorded live by using a high-speed camera and were observed by scanning electron microscopy. The growth behavior of silicon was found to vary not only with the nucleation undercooling, but also with the time after nucleation. In the earlier stage of solidification, the silicon grew in lateral, intermediary, and continuous modes at low, medium, and high undercoolings, respectively. In the later stage of solidification, the growth of highly undercooled silicon can transform to the lateral mode from the nonlateral one. The transition time of the sample with 320 K of undercooling was about 535 ms after recalescence, which was much later than the time where recalescence was completed.     

Containerless solidification of highly undercooled mullite melts: Crystal growth behavior and microstructure formation

A mullite (3Al₂O₃·2SiO₂) sample has been levitated and undercooled in an aero-acoustic levitator, so as to investigate the solidification behavior in a containerless condition. Crystal-growth velocities are measured as a function of melt undercoolings, which increase slowly with melt undercoolings up to 380 K and then increase quickly when undercoolings exceed 400 K. In order to elucidate the crystal growth and solidification behavior, the relationship of melt viscosities as a function of melt undercoolings is established on the basis of the fact that molten mullite melts are fragile, from which the atomic diffusivity is calculated via the Einstein-Stokes equation. The interface kinetics is analyzed when considering atomic diffusivities. The crystal-growth velocity vs melt undercooling is calculated based on the classical rate theory. Interestingly, two different microstructures are observed; one exhibits a straight, faceted rod without any branching with melt undercoolings up to 400 K, and the other is a feathery faceted dendrite when undercoolings exceed 400 K. The formation of these morphologies is discussed, taking into account the contributions of constitutional and kinetic undercoolings at different bulk undercoolings.     

A 300-MHz 25-/spl mu/A/Mb-leakage on-chip SRAM module featuring process-variation immunity and low-leakage-active mode for mobile-phone application processor

An on-chip 1-Mb SRAM suitable for embedding in the application processor used in mobile cellular phones was developed. This SRAM supports three operating modes - high-speed active mode, low-leakage low-speed active mode, and standby mode - and uses a subdivisional power-line control (SPC) scheme. The combination of three operating modes and the SPC scheme realizes low-power operation under actual usage conditions. It operates at 300 MHz, with leakage of 25 /spl mu/A/Mb in standby mode, and 50 /spl mu/A/Mb at the low-leakage active mode. This SRAM also uses a self-bias write scheme that decreases of minimum operating voltage by about 100 mV.     

Systolic array implementation of block LMS algorithm

The authors derive the systolic array implementation of the block LMS algorithm, consisting of N processing elements, where N is the filter order. The resulting array attains an order-independent sampling rate. Computer simulation results show that the block LMS algorithm is faster than the delayed LMS algorithm, which has previously been implemented on systolic arrays