Electrical characteristics of the ITO/HgInTe photodiodes

Photodiodes designed to be sensitive in the region 0.5–1.7 μm and obtained by vacuum magnetron sputtering of the ITO (SnO₂ + In₂O₃) layer on the surface of the Hg₃In₂Te₆ single crystal are studied. The electrical characteristics, measured at 265–333 K, indicate that the mechanism of charge transport in the diodes under study is thermionic. The current-voltage characteristic and its temperature variations are described quantitatively based on the energy diagram and the found parameters of the heterojunction. Original Russian Text ? L.A. Kosyachenko, I.M. Rarenko, E.F. Sklyarchuk, I.I. German, Sun Weiguo, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 568–571.     

The generation-recombination mechanism of charge transport in a thin-film CdS/CdTe heterojunction

An n-CdS/p-CdTe heterostructure is studied. The heterostructure is obtained using the sequential growth of CdS and CdTe layers by electrochemical deposition and closed-space sublimation, respectively. The measured current-voltage characteristics are interpreted in the context of the Sah-Noyce-Shokley generation-recombination model for the depletion layer of a diode structure. The theory quantitatively agrees with the experimental results.     

Design and analysis of development scenarios of social economic systems with the application of the operator graph apparatus

New theoretical results of the methodology elaboration for a scenario research on social economic systems are given. The principles and the problems of formal construction of synergistic and attractive scenarios, when a model of an object behavior is represented in the form of an operator directed graph, are described and formulated. A mathematical research on the scenario space is conducted, characteristic scenario regimes of the development of the system under study are given.     

Characteristic features of electron photoemission from the metal in SiC-based Schottky diodes

The photosensitivity of an Al-SiC Schottky diode in the range of photon energies less than the band gap of the semiconductor and the height of the potential barrier at the contact with the metal has been investigated. The observed characteristic features of the photon energy and applied voltage dependences of the photocurrent are interpreted in a model that takes into account the photoexcitation of electrons in the metal and their subsequent above-barrier passage and tunneling into the semiconductors. Fiz. Tekh. Poluprovodn. 31, 271–276 (February 1997)     

Hot-carrier far infrared emission in silicon

This paper describes studies of hot electroluminescence from silicon transistor structures in the photon energy range 0.25 to 0.8 eV. The transistor structures n-p-n and p-n-p used to obtain the emission spectra generated at accelerating voltages low enough that only one kind of carrier was involved in the excitation. Participation of hot carriers both in direct intersubband and indirect intraband radiative transitions is discussed. Fiz. Tekh. Poluprovodn. 33, 170–173 (February 1999)     

The elongation of viscose cord at a load of 4.5 kgf

Conclusions 1. It is impossible to achieve an increase in the intermediate elongation by changing the parameters of the technological conditions in the formation of cord with a breaking length of 34–36 km.2. On passing to the technological conditions for obtaining fibre with a higher strength, fatigue properties improve and the intermediate elongation decreases.3. The intermediate elongation of the cord depends on the type of dynamometer and the clamps with which the determination is carried out. Consequently, it cannot characterise the fatigue properties of both raw and rubber-treated cord.4. To determine the physicomechanical characteristics of cord thread it is necessary to use the same dynamometers, clamps and materials for them.Krasnoyarsk Branch of All-Union Synthetic Fibre Research Institute (VNIIV). Translated from Khimicheskie Volokna, No. 3, pp. 65–67, May–June, 1969.     

Generation-recombination and diffusion currents in HgMnTe n +-p junctions

Special features of the distributions of the space charge, the electric-field strength, and potential in the p-n junction in the narrow-gap HgMnTe semiconductor were considered using the Poisson equation. It is shown that, as the band gap narrows, the effect of free charge carriers induces the coordinate dependence of electric-field strength to deviate from the linear dependence and that of the potential to deviate from the quadratic dependence. As a result of this, and also because of an appreciable increase in the diffusion potential in the n ⁺-p junction with the degenerate n ⁺ region, the mechanisms of the charge transport become peculiar: the voltage dependence of the recombination current deviates from those following from the conventionally used analytical expressions, whereas for higher bias voltages, the diffusion current of holes from the lightly doped p region into the n ⁺ region is prevalent.     

Generation-recombination centers in CdTe:V

Generation-recombination currents in surface-barrier structures based on vanadium-doped CdTe are investigated. The level depth and the capture cross section of the centers responsible for the most efficient generation-recombination processes in the samples examined are determined.