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排序方式: 共有76条查询结果,搜索用时 62 毫秒
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2.
Formula‐derived advanced glycation end products are involved in the development of long‐term inflammation and oxidative stress in kidney of IUGR piglets
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3.
Jordi Cabana Laure Monconduit Dominique Larcher M. Rosa Palacín 《Advanced materials (Deerfield Beach, Fla.)》2010,22(35):E170-E192
Despite the imminent commercial introduction of Li‐ion batteries in electric drive vehicles and their proposed use as enablers of smart grids based on renewable energy technologies, an intensive quest for new electrode materials that bring about improvements in energy density, cycle life, cost, and safety is still underway. This Progress Report highlights the recent developments and the future prospects of the use of phases that react through conversion reactions as both positive and negative electrode materials in Li‐ion batteries. By moving beyond classical intercalation reactions, a variety of low cost compounds with gravimetric specific capacities that are two‐to‐five times larger than those attained with currently used materials, such as graphite and LiCoO2, can be achieved. Nonetheless, several factors currently handicap the applicability of electrode materials entailing conversion reactions. These factors, together with the scientific breakthroughs that are necessary to fully assess the practicality of this concept, are reviewed in this report. 相似文献
4.
Cellere G. Larcher L. Valentini M.G. Paccagnella A. 《Electron Devices, IEEE Transactions on》2002,49(8):1367-1374
The purpose of this work was to study the gate oxide leakage current in small area MOSFETs. We stressed about 300 nMOSFETs with an oxide thickness t/sub OX/=3.2 nm by using a staircase gate voltage. We detected the oxide breakdown at an early stress stage, by measuring the leakage current at low fields during the stress. The gate leakage of stressed devices is broadly distributed, but two well-defined current regimes appear, corresponding to currents larger than 1 mA or smaller than 100 pA, respectively. We focused our attention on the small current regime, which shows all the electrical characteristics typical of the soft breakdown, with the noticeable exception of the current intensity that is much smaller than usually reported in literature, being the average leakage around 40 pA at V/sub G/=+2 V. For this reason, we introduce the oxide micro breakdown. The leakage kinetics during stress, the gate-voltage characteristics of stressed devices and the breakdown statistical distributions are in agreement with the formation of a single conductive path across the oxide formed by few oxide defects. Just two positively charged traps can give rise to a gate leakage comparable to those experimentally found, as evaluated by using a new original model of double trap-assisted tunneling (D-TAT) developed ad hoc. 相似文献
5.
Larcher L. Pavan P. Pietri S. Albani L. Marmiroli A. 《Electron Devices, IEEE Transactions on》2002,49(2):301-307
This paper presents for the first time a new compact SPICE model of floating gate nonvolatile memory cells capable to reproduce effectively the complete DC electrical behavior in every bias conditions. This model features many advantages compared to previous ones: it is simple and easy to implement since it uses SPICE circuit elements, is scalable, and its computational time is not excessive. It is based on a new procedure that calculates the floating gate voltage without using fixed capacitive coupling coefficients, thus improving the floating gate voltage estimate that is fundamental for the correct modeling of cell operations. Moreover, this model requires only the usual parameters adopted for SPICE-like models of MOS transistors plus the floating gate-control gate capacitance, making it very attractive to industry as the same parameter extraction procedure used for MOS transistors can be directly applied. The model we propose has been validated on E2PROM and flash memory cells manufactured in existing technology (0.35 μm and 0.25 μm) by STMicroelectronics 相似文献
6.
The purpose of this paper is to investigate the physical mechanism of NROM memory erase. Three conduction mechanisms potentially responsible of NROM erase will be analyzed (tunneling and emission of electrons through both bottom and top oxide, tunneling and injection of holes over the bottom oxide barrier) by means of standard two-dimensional simulations and ad-hoc models reproducing hole and electron transport mechanisms across the oxide not included in standard device simulators. Hot-hole injection will be identified as the actual conduction mechanism of NROM erase, and two compact models capable to describe the main characteristics of NROM erase current will be developed. 相似文献
7.
Monoclonal antibodies (MAbs) are being widely used for imaging studies, coupled mainly with 99mTc. The antibody ior egf/r3 is a MAb against human epidermal growth factor receptor (hEGF-r), and we have developed a method for optimum labeling of this MAb with 99mTc. The reduction was performed with 2-mercaptoethanol (2-ME) at a molar ratio of 2000:1 (2-ME:MAb) and methylene diphosphonate as transchelant. The integrity of reduced MAb was checked by mean of native polyacrylamide gel electrophoresis (PAGE) and gel filtration chromatography on Superose 12 (purity >99%). Radio colloids remained lower than 2%, and the labeling efficiency was 98.5%. The number of sulfhydryl groups generated was quantified using Ellman's reagent and was found to be 6.65+/-0.69 per antibody molecule. In vitro stability studies in several challenging conditions (DTPA, human serum albumin and human serum) were performed, and no significant loss in binding percentage was seen. Radio receptor assay was used to test immunoreactivity of the reduced MAb. Both labeled and unlabeled MAbs were able to compete for binding to the hEGF-r with radioiodinated EGF. Biodistribution studies in BALB/c mice are reported. 相似文献
8.
Sera from 30 of 303 (9.9%) unselected term newborn infants were deficient in their ability to opsonize heat-killed baker's yeasts, an incidence which is almost double that seen in adults. Genetic influence is important in some since the mothers of 10 infants with defective opsonization showed the same defect, but it was not related to the sex or race of the infant or to the atopic state of the parents. In others the defect could be due to a functional maturation delay of the complement system, but not to inhibitory factors in neonatal serum since correction of opsonization was achieved with subopsonizing amounts of normal sera. Significantly more infants had sera with high opsonizing capacity (greater than 80% yeasts phagocytosed) when compared with adults; perhaps antibody independent immune mechanisms like this are important in the newborn. This study shows that a common specific immunodeficiency which may predispose to severe infection or atopy can be identified at birth. 相似文献
9.
Matteo Bordiga Raffaele Guzzon Roberto Larcher Fabiano Travaglia Marco Arlorio Jean Daniel Coïsson 《International Journal of Food Science & Technology》2020,55(2):559-568
Wine is a fermented beverage that could be affected by high concentrations of biogenic amines, thus altering organoleptic and health properties. In this work, the capacity of different selected yeast strains regarding to affect the content of tyramine, histamine, 2-phenylethylamine, tryptamine and their precursor amino acids (pAA) during fermentation has been described. Overall, biogenic amines (BAs) and pAA contents appeared significantly related both to the strain and to the nutrient supplementation applied. Among BAs, without and (with) nitrogen source addition, the concentrations covered a range between 0.1 and 9.5 (0.1–10.3) mg L−1 for tyramine; 0.1 and 4.4 (0.1–4.6) mg L−1 for histamine; 0.4 and 1.1 (0.4–1.4) mg L−1 for 2-phenylethylamine; and 0.02 and 0.14 (0.01–0.12) mg L−1 for tryptamine, respectively. Considering that also wine yeast species are responsible for BAs formation, the evidence from fermentation trials underlined the relevance of a careful choice of ADY strains and nitrogen sources in the management of alcoholic fermentation in wine. 相似文献
10.
Resistive Switching: Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (Adv. Funct. Mater. 10/2017)
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