Scaling planar silicon devices

The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.     

Biodegradation of monoaromatic hydrocarbons in aquifer columns amended with hydrogen peroxide and nitrate

The ability of indigenous microorganisms to degrade benzene, toluene, ethylbenzene and xylenes (BTEX) in laboratory scale flow-through aquifer columns was tested separately with hydrogen peroxide (110 mg/l) and nitrate (330 mg/l as NO₃⁻) amendments to air-saturated influent nutrient solution. The continuous removal of individual components from all columns relative to the sterile controls provided evidence for biodegradation. In the presence of hydrogen peroxide, the indigeneous microorganisms degraded benzene and toluene (> 95%), meta- plus para-xylene (80%) and ortho-xylene (70%). Nitrate addition resulted in 90% removal of toluene and 25% removal of ortho-xylene. However, benzene, ethylbenzene, meta- and para-xylene concentrations were not significantly reduced after 42 days of operation. Following this experiment, low dissolved oxygen (< 1 mg/l) conditions were initiated with the nitrate-amended column influent in order to mimic contaminated groundwater conditions distal from a nutrient injection well. Toluene continued to be effectively degraded (> 90%), and more than 25% of the benzene, 40% of the ethylbenzene, 50% of the meta- plus para-xylenes and 60% of the ortho-xylene were removed after several months of operation.     

混合信号芯片设计处理关键的转折阶段

通过简单地剪切和粘贴知识产权(IP)内核可以加快无工厂半导体公司的系统级芯片(SOC)设计。 过去十年中,涌现出大量的为系统制造商提供专用芯片(ASIC)的小型IC设计公司。这些被称为无工厂企业(因为他们将IC制造过程转交给商业芯片制造工厂),需要的启动资金较少,而且如果市场接受他们的产品的话,能够获得丰厚的回报。在大量设计工具的支持下,这些无工厂设计企业在历史悠久的大型芯片制造商,如IBM、Intel、Motorola和德州仪器公司所主导的市场中赢得了一席之地。     

A three-phase model for mixed columnar-equiaxed solidification

A three-phase model for mixed columnar-equiaxed solidification is presented in this article. The three phases are the parent melt as the primary phase, as well as the solidifying columnar dendrites and globular equiaxed grains as two different secondary phases. With an Eulerian approach, the three phases are considered as spatially coupled and interpenetrating continua. The conservation equations of mass, momentum, species, and enthalpy are solved for all three phases. An additional conservation equation for the number density of the equiaxed grains is defined and solved. Nucleation of the equiaxed grains, diffusion-controlled growth of both columnar and equiaxed phases, interphase exchanges, and interactions such as mass transfer during solidification, drag force, solute partitioning at the liquid/solid interface, and release of latent heat are taken into account. Binary steel ingots (Fe-0.34 wt pct C) with two-dimensional (2-D) axis symmetrical and three-dimensional (3-D) geometries as a benchmark were simulated. It is demonstrated that the model can be used to simulate the mixed columnar-equiaxed solidification, including melt convection and grain sedimentation, macrosegregation, columnar-to-equiaxed-transition (CET), and macrostructure distribution. The model was evaluated by comparing it to classical analytical models based on limited one-dimensional (1-D) cases. Satisfactory results were obtained. It is also shown that in order to apply this model for industrial castings, further improvements are still necessary concerning some details.     

Dynamics of Interacting OH– and OD– Ions in KCl

OH^– and OD^– defects are known to form rotational tunneling systems in KCl host crystals. We have studied the complex dielectric susceptibility of KCl doped with different concentrations of OH^– and OD^– in a wide range of frequencies and temperatures. Our main result is that there is a transition from coherent single ion tunneling at low defect concentration to an incoherent tunneling motion at high defect concentrations. In addition, we have studied the thermally activated motion of pairwise coupled hydroxide ions in an attempt to obtain information on the microscopic configurations of the different pairs contributing to the dielectric loss. PACS numbers: 61.72.Ji, 77.22-d, 78.30.Ly