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1.
2.
Shogo Mamada Naoyuki Yaguchi Masanori Hansaka Masafumi Yamato Hirohisa Yoshida 《应用聚合物科学杂志》2015,132(15)
This study was addressed to the influence of an electric field strength applied at fabrication process and matrix properties, such as the dielectric constant and the Young's modulus, on “pseudo‐1‐3 piezoelectric ceramic/polymer composite” in order to further enhance the piezoelectricity of that. The pseudo‐1‐3 piezoelectric ceramic/polymer composite consists of linearly ordered piezoelectric ceramic particles in polymer material. Silicone gel, silicone rubber, urethane rubber, and poly‐methyl‐methacrylate, which exhibit different dielectric constants and Young's modulus, were used as matrices to evaluate the matrix influence. The piezoelectricity of the pseudo‐1‐3 piezoelectric ceramic/polymer composite was evaluated using the piezoelectric strain constant d33. The d33 is one of the indices of the piezoelectric properties for piezoelectric materials. As a result, it was confirmed that d33 of the pseudo‐1‐3 piezoelectric ceramic/polymer composite increased with the increase of the electric filed strength applied at fabrication process, though, it reached a constant value at a certain strength value. Further it was confirmed that dielectric constant of the matrix had a small influence on d33 of the pseudo‐1‐3 piezoelectric ceramic/polymer composite, however, in case of matrix of lower Young's modulus, d33 was increase. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 41817. 相似文献
3.
Hiromichi Ichinose Masanori Taira Sachiko Furuta Hiroaki Katsuki 《Journal of the American Ceramic Society》2003,86(9):1605-1608
Niobium- or vanadium-doped anatase sols were prepared by hydrothermal treatment of 0.1 mol/dm3 peroxotitanium complex aqueous solutions dissolving 0–10 mol% niobium or vanadium at 100°C for 8 h. Niobium-doping caused the increase of lattice constants of anatase and the shape change of anatase crystal from spindle-like to cubic-like structure, but no change of the optical absorbance. Vanadium-doping caused the decrease of lattice constant of c -axis, the miniaturization of anatase crystal and the increase of optical absorbance at the wavelength from 350–700 nm. 相似文献
4.
Deformation behavior of stoichiometric blends made from poly(styrene-co-styrenesulfonic acid) (SPS) and poly(styrene-co-4-vinylpyridine) (SVP) was investigated by TEM observation of strained thin films. An FTIR investigation revealed that ionic cross-links were formed between the component polymers upon blending due to intermolecular ion-ion interactions, which arose from proton transfer from sulfonic acid groups to pyridine groups. TEM observations indicate that the deformation mode of the blends changed from crazing only to crazing plus shear deformation, with the shear contribution becoming larger, as the ion content in the blends increased. Such changes in deformation mode can be understood as arising from an increase in the ‘effective’ strand density due to the formation of ionic cross-links upon blending. It was also found that the ionic cross-links via pyridinium cation/sulfonate anion ion pairs were more effective in inducing the transition of deformation mode than ionic cross-links via -SO3−/Na+ or -SO3−/Ca2+ ion pairs. 相似文献
5.
N Okada S Sato T Sasou M Aoyama K Nishida K Yoshikawa 《Canadian Metallurgical Quarterly》1993,129(4):403-407
Ambiguous abdominal situs, asplenia/polysplenia and severe cardiac malformations characterize heterotaxy in humans. These anomalies result from the inability of the developing embryo to establish normal left-right asymmetry. We have studied an interesting family in which the heterotaxy phenotype segregates as an X-linked recessive trait. In order to map the heterotaxy locus (HTX), we have analysed 39 family members using highly-polymorphic microsatellite markers from the X chromosome. One of these markers, DXS994, shows no recombination with the disease locus in 20 informative meioses. Linkage analysis results in a maximum lod score of 6.37. Current genetic and physical mapping data assign the order of loci in Xq24-q27.1 as cen-DXS1001-(DXS994, HTX)-DXS984-tel. These results establish the first mapping assignment of situs abnormalities in humans. 相似文献
6.
Kotaro Take-uchi Takashi E-naka Norimitsu Kon-no Yozo Hosotani Takashi Orimoto Masanori Iwase 《国际钢铁研究》1997,68(12):516-519
By employing an electrochemical technique involving stabilized zirconia as solid electrolyte and Mo + MoO2 mixture as reference electrode, the equilibrium oxygen partial pressures for three-phase assemblages of CaSiO3(s) + Ca3Si2O7(s) + {CaO + SiO2 + FexO} melt and Ca3Si2O7(s) + Ca2SiO4(s) + {CaO + SiO2 + FexO} melt were determined as: - log {PO2 (CS + C3S2 + L)/bar} = - 3.22 13000/(T/K) ± 0.05 - log {PO2 (C3S2 + C2S + L)/bar} = - 0.92 16400/ (T/K) ± 0.04. respectively, where CS, C3S2 and C2S indicate CaSiO3(s), Ca3Si2O7(s). and Ca2SiO4(s), respectively. 相似文献
7.
There are several damping phenomena in quantum optics. Such phenomena have been usually explained by open systems. In statistical physics, open system dynamics have been used to study the irreversibility and the approach to equilibrium. In this paper, the dynamical change of the mutual entropy for an open system, frequently studied in the quantum optics literature, is rigorously computed through a model of quantum Markov chain. In particular, the concrete formula of Stinespring expression for such a model is obtained and applied to the derivation of the mutual entropy, and some computational results are presented. 相似文献
8.
9.
Chihiro J. Uchibori Y. Ohtani T. Oku Naoki Ono Masanori Murakami 《Journal of Electronic Materials》1997,26(4):410-414
Significant reduction of the contact resistance of In0.7Ga0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W2N barrier layer between the Ni layer and W layer. The In0.7Ga0.3 As/Ni/W2N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing
at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C.
The polycrystalline W2N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and
an increase in the total area of the InxGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance. 相似文献
10.
Boron removal by titanium addition in solidification refining of silicon with Si-Al melt 总被引:4,自引:0,他引:4
Takeshi Yoshikawa Kentaro Arimura Kazuki Morita 《Metallurgical and Materials Transactions B》2005,36(6):837-842
In order to effectively remove B from Si for its use in solar cells, a process involving B removal by solidification refining
of Si using a Si-Al melt with Ti addition was investigated. For clarifying the effect of Ti addition on B removal from the
Si-Al melt, TiB2 solubilities in Si-64.6 at. pct Al melt at 1173 K and Si-60.0 at. pct Al melt at 1273 K were determined by measuring the
equilibrium concentrations of B and Ti in the presence of TiB2 precipitates. The small solubilities of TiB2 in the Si-Al melt indicate the effective removal of B from the Si-Al melt by Ti addition. Further, solidification experiments
of Si-Al alloys containing B by Ti addition were performed, and the effect of Ti addition on the solidification refining of
Si with the Si-Al melt was successfully confirmed. 相似文献