Wideband and compact folded loop antenna

A simple and successful design method that yields a wideband and compact antenna without a ground plane is proposed. The antenna, referred to as the folded loop antenna, can, with the right parameters, achieve wideband characteristics. Calculated and measured results agree well and more than 50% bandwidth (return loss /spl les/-10 dB) is obtained.     

A 322 MHz random-cycle embedded DRAM with high-accuracy sensing and tuning

A 16 Mb embedded DRAM macro in a fully CMOS logic compatible 90 nm process with a low noise core architecture and a high-accuracy post-fabrication tuning scheme has been developed. Based on the proposed techniques, 61% improvement of the sensing accuracy is realized. Even with the smallest 5 fF/cell capacitance, a 322 MHz random-cycle access while 32 ms data retention time which contributes to save the data retention power down to 60 /spl mu/W are achieved.     

The As-prepared surfaces of C-axis-oriented Nd1Ba2Cu3Oy thin films characterized using scanning probe microscopes

Recently, superconducting Nd₁Ba₂Cu₃O_y (Ndl23) thin films with high superconducting transition temperature (T _c) have been successfully fabricated at our institute employing the standard laser ablation method. In this paper, we report the results of surface characterization of the Nd123 thin films using an ultrahigh vacuum scanning tunneling microscope/spectroscopy (UHV-STM/STS) and an atomic force microscope (AFM) system operated in air. Clear spiral pattern is observed on the surfaces of Nd123 thin films by STM and AFM, suggesting that films are formed by two-dimensional island growth mode. Contour plots of the spirals show that the step heights of the spirals are not always the integer or half-integer number of thec-axis parameter of the structure. This implies that the surface natural termination layer of the films may not be unique. This result is supported byI-V STS measurements. The surface morphology of the Nd123 thin films is compared with that of thec-axis-oriented Y₁Ba₂Cu₃S_y thin films. Surface atomic images of the as-prepared Nd123 thin films are obtained employing both STM and AFM. STS measurements show that most of the surfaces are semiconductive. The results of STS measurements together with the fact that we are able to see the surface atomic images using scanning probe microscopes suggest that exposure to air does not cause serious degradation to the as-prepared surfaces of Nd123 thin films.     

Heat Capacity of 3He Solid Film on Graphite in Magnetic Fields

Heat capacities of a submonolayer ³He solid film adsorbed on a graphite surface are measured in magnetic fields up to 400 Oe. The measured heat capacity shifts to higher temperatures with an increasing magnetic field. The amplitudes of the shifts are twenty times larger than the magnitude of the Zeeman energy, which is anomalously large. With regard to the origin of these large shifts, the reduction of frustrations and the weakening of the competition between multiple spin exchange interactions are discussed.     

Fabrication of GaAs quantum wire structure using metal organic molecular beam epitaxy

GaAs quantum wires (100*20 nm/sup 2/) buried in AlAs layers have been successfully fabricated using metal organic molecular beam epitaxy (MOMBE) for the first time. The underlying growth mechanism is that, under appropriate As/sub 4/ pressure in MOMBE, GaAs preferentially grows only on the sidewalls of the patterned     

Oxidation of Fe (II) in sulfuric acid solutions with dissolved molecular oxygen

The oxidation of Fe(II) with dissolved molecular oxygen was studied in sulfuric acid solutions containing 0.2 mol . dm^-3 FeSO₄ at temperatures ranging from 343 to 363 K. In solutions of sulfuric acid above 0.4 mol . dm^-3, the oxidation of Fe (II) was found to proceed through two parallel paths. In one path the reaction rate was proportional to both [Fe²⁺]² and po₂, exhibiting an activation energy of 51.6 . kJ mol^-1. In another path the reaction rate was proportional to [Fe²⁺]², [SO_4-], and po₂ with an activation energy of 144.6 kJ . mol^-1. A reaction mechanism in which the SO_4- ions play an important role was proposed for the oxidation of Fe(II). In dilute solutions of sulfuric acid below 0.4 mol . dm^-3, the rate of the oxidation reaction was found to be proportional to both [Fe(II)]² and Po₂, and was also affected by [H⁺] and [SO_2- ⁴]. The decrease in [H⁺] resulted in the increase of reaction rate. The discussion was further extended to the effect of Fe (III) on the oxidation reaction of Fe (II).     

Growth condition of iodine-doped n+-CdTe layers in metal-organic vapor phase epitaxy

Iodine doping of CdTe layers grown on (100) GaAs by metal-organic vapor phase epitaxy (MOVPE) was studied using diethyltelluride (DETe) and diisopropyltelluride (DiPTe) as tellurium precursors and ethyliodine (EI) as a dopant. Electron densities of doped layers increased gradually with decreasing the growth temperature from 425°C to 325°C. Doped layers grown with DETe had higher electron densities than those grown with DiPTe. When the hot-wall temperature was increased from 200°C to 250°C at the growth temperature of 325°C, doped layers grown with DETe showed an increase of the electron density from 3.7×10¹⁶ cm⁻³ to 2.6×10¹⁸ cm⁻³. On the other hand, such an increase of the electron density was not observed for layers grown with DiPTe. The mechanisms for different doping properties for DETe and DiPTe were studied on the basis of the growth characteristics for these precursors. Higher thermal stability of DETe than that of DiPTe was considered to cause the difference of doping properties. With increasing the hot-wall temperature from 200°C to 250°C, the effective ratio of Cd to Te species on the growth surface became larger for layers grown with DETe than those grown with DiPTe. This was considered to decrease the compensation of doped iodine and to increase the electron density of layers grown with DETe. The effective ratio of Cd to Te species on the growth surface also increased with decreasing growth temperature. This was considered to increase the electron density with decreasing growth temperature.     

Wavelength-selective fused fiber couplers utilizing fielddifference between core and cladding modes

It is shown that wavelength-selective fused taper couplers can be made by using the large difference in field distribution, between core and cladding modes. It is evident from the calculation results that fibers with a high-index difference and a thin outside diameter are necessary to fabricate the couplers. Fused taper couplers are made of thin fibers with a cladding diameter of 66.0 μm and an index difference of 0.84%. The splitting ratio of the coupler obtained is more than 20 dB in the 1.53-μm region and less than -20 dB in the 0.8 to 1.0-μm region. The loss is less than 0.2 dB and 0.4 dB in the 1.53-μm and the 0.8 to 1.0-μm regions, respectively     

A Study of Shadowing on Indoor Visible-Light Wireless Communication Utilizing Plural White LED Lightings

White LED is considered as a strong candidate for the future lighting technology. We have proposed an optical wireless communication system that employs white LEDs for indoor wireless networks. In this system, LED is used not only as a lighting device, but also as a communication device. The transmitter has large optical power and large emission characteristics to function as lighting device. And the system has specific wireless channel impulse response differing from infrared wireless communication. In this paper, we discuss about shadowing effect on the system utilizing plural LED lightings including the performance of ISI based on the impulse response. We consider the downlink transmission based on TDMA and evaluate the shadowing effect caused by pedestrians with computer simulation. When the shadowing often occurs at 800 Mb/s, the performance of outage call duration rate and blocking rate are improved by using 3 LED lightings compared with 1 or 2 LED lightings. And, we show that the system with the optimal number of the LED lighting is robust against shadowing and can accommodate more calls. Toshihiko Komine was born in Shizuoka, Japan, on November 17, 1978. He received the B.E. and M.E. degrees in Information and Computer Science from Keio University, Yokohama, Japan, in 2001 and 2003 respectively. He is currently studying for the Ph.D. degree at Department of Information and Computer Science, Keio University. His current research interests are optical wireless communications and LED communications. Shinichiro Haruyama is a professor at Department of Information and Computer Science, Faculty of Science and Technology, Keio University, Yokohama, Japan. He received an M.S. in engineering science from University of California at Berkeley in 1983 and a Ph.D. in computer science from the University of Texas at Austin in 1990. He worked for Bell Laboratories of AT{&}T and Lucent Technologies, U.S.A from 1991 to 1996, and for Sony Computer Science Laboratories, Inc. from 1998 to 2002. His research interests include reconfigurable system, system design automation, wireless communication, and visible light communication. Masao Nakagawa was born in Tokyo, Japan in 1946. He received the B.E., M.E. and Ph.D. degrees in electrical engineering from Keio University, Yokohama, Japan, in 1969, 1971 and 1974 respectively. Since 1973, he has been with the Department of Electrical Engineering, Keio University, where he is now a Professor. His research interests are in CDMA, consumer Communications, Mobile communications, ITS (Intelligent Transport Systems), Wireless Home Networks, and Visible light Communication. He received 1989 IEEE Consumer Electronics Society Paper Award, 1999-Fall Best Paper Award in IEEE VTC, IEICE Achievement Award in 2000, IEICE Fellow Award in 2001. He was the executive committee chairman on International Symposium on Spread Spectrum Techniques and Applications in 1992 and the technical program committee chairman of ISITA (International Symposium on Spread Spectrum Techniques and Applications) in 1994. He is an editor of Wireless Personal Communications and was a guest editor of the special issues on “CDMA Networks I, II, III and IV” published in IEEE JSAC in 1994 (I and II) and 1996 (III and IV). He chairs the Wireless Home Link sub-committee in MMAC (Multimedia Mobile Access Communication Promotion Committee).     

Suppression of photo-induced dilation in cyanide treated hydrogenated amorphous silicon films

Effects of cyanide (CN) treatment with hydrogenated amorphous silicon (a-Si:H) films have been investigated. The decrease of ΔV/V was observed in cyanide treated a-Si:H films and the successive thermal annealing at 200°C after CN treatment induced the further reduction of the ΔV/V. XPS spectra show the indirect evidence that the cyanide species is present within 10 nm from the hydrogenated amorphous silicon surface. The results of CN treatment with a-Si:H solar cells are demonstrated.