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排序方式: 共有998条查询结果,搜索用时 31 毫秒
1.
H. Terasaki Y. Komizo M. Yonemuira T. Osuki 《Metallurgical and Materials Transactions A》2006,37(4):1261-1266
Kinetic information about the phase transformation, during solidification process and solid-state transformation is essential
to the material processing, such as welding. In our research group, in-situ phase identification system consisting of undulator beam and imaging plate have recently been used. The welding torch is
driven by stepping-motor in the system. Those make possible that phase transformation can be identified in real-time under
the condition of directional solidification and the spatial resolution of 100 × 500 μm. The time-resolution is 0.3125 seconds.
In the present work, combination of analyzing method: the in-situ phase identification system, morphological observation by high-temperature laser scanning confocal microscopy and observation
of microstructure at room temperature by OM, SEM and micro diffraction-system, is suggested to analyze the phase transformation
during welding process. Phase transformation process of hypereutectoid carbon steel, during welding was analyzed as an example
of combination observation. 相似文献
2.
3.
Shingo Hirano Akio Kawabata Masaru Yoshinaka Ken Hirota Osamu Yamaguchi 《Journal of the American Ceramic Society》1995,78(5):1414-1416
A compound denoted as (Ce0.75 Zr0.25 )O2 (Ce, ZrO8 ) is formed near room temperature from cerium and zirconium nitrates using hydrazine monohydrate. It has a cubic unit cell with a = 0.5342 nm. Characterization of powders heated to various temperatures at 10°C/min demonstrates that the specific surface area does not decrease below 20 mVg until >1000°C. 相似文献
4.
5.
Masaru Kadoshima Masahiko HirataniYasuhiro Shimamoto Kazuyoshi ToriiHiroshi Miki Shinichiro KimuraToshihide Nabatame 《Thin solid films》2003,424(2):224-228
We investigated rutile-type titanium dioxide (TiO2) films for possible use as a high-k gate insulator. The TiO2 thin films were directly deposited on Si substrates using a RF magnetron sputtering method with a sintered oxide target. A single phase of rutile-type TiO2 whose dielectric constant of approximately 75 was obtained when the film was deposited in an inert gas atmosphere and annealed at 800 °C in an oxidizing gas atmosphere. The oxygen ions were deficient in the as-deposited film, and consequently, a sufficient oxygen supply was needed to crystallize the film to a single phase of rutile during the post-annealing. However, the interfacial SiO2 layer between the TiO2 and the Si substrate simultaneously grew thicker than 2 nm. As the interfacial SiO2 grew, the leakage current was decreased and the equivalent oxide thickness was increased, in the Au/rutile-type TiO2/Si capacitor. Therefore, we concluded that the growth of the interfacial SiO2 layer thicker than 2 nm is inevitable to form the single phase of rutile-type TiO2 and to decrease the leakage. 相似文献
6.
Infrared (IR) detecting elements were prepared using positive temperature coefficient (PTC) thermistors with large temperature
coefficients of resistivity (α). Their compositions were denoted as Ba1−x
Sr
x
Nb0.003Ti0.997O3 + 1 mol % TiO2 + 0.07 mol %MnO (x=0, 0.2), and their temperature coefficients of resistivity were 78 and 50% K−1, respectively. Their IR sensing properties were measured under the self-regulating heating conditions, and were compared
with those of a detector with small α (18 % K−1). It was shown that large α was effective for controlling the element temperature by self-regulating heating and for improving
sensitivity. The responsivity,R
v
of the element withx=0.2 was 980 VW−1, and was as large as those of pyroelectric detectors. Expressions which normalize the sensitivity and the thermal time constant
were derived. From these expressions, criteria for improving some IR sensing properties were obtained. 相似文献
7.
The gelation mechanism of agarose and κ-carrageenan aqueous solutions was investigated by using polarized light scattering and X-ray diffraction techniques in terms of the liquid-liquid phase separation. When an incident beam of He-Ne gas laser was directed to the gel prepared by quenching the agarose solution, the logarithm of scattered intensity increased linearly in the initial stage and tended to deviate from this linear relationship in the latter stage. If the linear increase in the initial stage could be analyzed within the framework of the linear theory of spinodal decomposition proposed by Cahn, the phase diagram indicated that the gelation is attributed to the phase separation due to the concentration fluctuation of solution. Furthermore, in the later stage showing the deviation of the linear relationship, light scattering under Hv polarization condition showed a X-type pattern indicating the existence of optically anisotropic rods, the optical axes being parallel or perpendicular with respect to the rod axis. In spite of the existence of the rods, no crystallites were confirmed by the corresponding X-ray diffraction and DSC measurements. For κ-carrageenan solutions, the logarithm of scattered intensity against time showed a constant value. This indicated that the gelation of κ-carrageenan solutions is independent of liquid-liquid phase separation but is due to the rapid formation of cross-linking points. Accordingly it turns out that the small difference of chemical structure between agarose and κ-carrageenan causes quite different gelation mechanism. 相似文献
8.
Nobuo Masaki Tetsuo Yoshida Masaru Miyagawa Iawo Ohshima Kikuo Matsuzawa 《Electrical Engineering in Japan》1992,112(2):58-70
A second-generation model of cubicletype gas-insulated switchgear (C-GIS) with composite insulation incorporating SF6 gas has been developed. The design does not require a gas process in field assembly; it has high reliability and its installation is more rapid; and a further reduction in size is achieved. The design principles are described in detail. 相似文献
9.
Masaru Sanada 《Microelectronics Reliability》1993,33(7)
A new technique for failure analysis of LSI with multi metal layers is described. There is a fabrication technique to form a big and optional window on upper layers using Nd-YAG laser without destroying any electrical function, and to approach the failure point through this window. The failure analysis procedure based on logical flow is presented. Fabrication technique is located in part of this procedure which consists of four steps. Two difficult reasons for approaching the failure point without fabrication technique are described. This difficulty results from line composition and line width. The fabrication procedure using Nd-YAG laser is reported. This procedure is to cover the chip surface with photo resist, and form a big and optional size window on upper layer with laser beam, and finally expose the purposed layer. Three failure analysis examples using this technique are introduced: unformed contact falure mode, Si-noduled failure mode, and isolation destroying failure mode. 相似文献
10.
Masaru Itoh 《The Structural Design of Tall and Special Buildings》1992,1(2):119-132
This paper summarizes the results of the wind design carried out for the Act Tower building in Japan. Wind tunnel tests were performed in order to estimate the building response for different wind directions. Undesirable building motion perceived by building occupants is also studied and antivibration systems have been installed to solve this problem. 相似文献