Particle Penetration through Inclined and L-Shaped Cracks

This paper presents a particle penetration model predicting particle penetration coefficient (Pp) through a narrow crack of arbitrary incline angles (θ). The objective was to simulate Pp for outdoor-to-indoor particle penetration for residential infiltration conditions. This model assumes laminar infiltration flow and considers particle deposition from both gravitational sedimentation and Brownian diffusion. For micron-sized particles, modeling results indicate that gravitational sedimentation is the major deposition mechanism. Pp increases monotonically with ∣θ∣ because effective particle sedimentation velocity (vs?cos?θ) decreases monotonically with ∣θ∣. For submicron-sized particles (0.1?μm), Brownian diffusion is the major particle deposition mechanism. Because Brownian diffusion is a nondirectional deposition mechanism, crack inclination did not affect Pp. This study applied this model to estimate Pp for L-shaped cracks, and validated modeling results with experiments. Experimental results indicated that inertial impaction and crack entrance cutoff effects were not significant particle deposition mechanisms for the test micron-sized particles. Gravitational sedimentation was the major deposition mechanism. An L-shaped crack can be simulated as the combination of horizontal and vertical sections. This model agreed reasonably with experimental results.     

Role of hepatic resection in surgery for bilateral intrahepatic stones

The effect of phenylephrine-induced reflex parasympathetic stimulation on QT interval and its dispersion was studied in 16 healthy subjects with a history of paroxysmal supraventricular tachycardia, both during sinus rhythm and during atrial pacing. Results demonstrate that rapid reflex parasympathetic stimulation does not influence QT interval duration or QT dispersion, and also emphasize the inappropriateness of Bazett's formula, the need for comparison of QT intervals during identical heart rates, and the importance of analyzing all 12 leads of a standard electrocardiogram when assessing the effects of various interventions on the QT interval.     

Simulation of the pressure set-point change transient with the Kuosheng plant analyzer

The purpose of this paper is to simulate the pressure set-point change transient with the Kuosheng plant analyzer. The Kuosheng plant analyzer was developed for the Kuosheng nuclear power station based on the boiling water reactor plant analyzer of the Brookhaven National Laboratory and the Chinshan plant analyzer of the Taiwan Power Co. First, the pressure control system (PCS) model was verified on a stand-alone basis, with the sensed dome pressure test signal as the input variable. Then, a transient induced by a step change in the pressure set-point was simulated with the Kuosheng plant analyzer and compared with the test data. The predicted results of the main system variables showed good agreement with the test data-within 8% of the maximum relative deviation. In addition, the PCS performance of the Kuosheng nuclear power station was analyzed.     

Thin-gate oxides prepared by pure water anodization followed byrapid thermal densification

Anodic oxidation at room temperature with pure deionized water as electrolyte and then followed by high-temperature rapid thermal densification was used to prepare high breakdown endurance thin-gate oxides with thicknesses of about 50 Å. It was observed that the oxides prepared by anodic oxidation followed by rapid thermal densification (AOD) show better electrical characteristics than those grown by rapid thermal oxidation (RTO) only. The AOD oxides have a very low midgap interface trap density, Ditm, of smaller than 1×10¹⁰ eV^-1 cm^-2 and negative effective oxide trapped charge. From the smaller leakage currents observed during staircase ramp voltage time-zero dielectric breakdown (TZDB) and constant field time-dependent dielectric breakdown (TDDB) testings, it is supposed that the uniform interfacial property and the pretrapped negative charges in AOD oxides are responsible for the improved characteristics     

Experimental and analytical studies of innovative prestressed concrete box-girder bridges

This paper presents experimental and analytical results of four scaled prestressed concrete box-girder bridges with corrugated steel webs. The location of prestressing strands at both ends of the specimens and the thickness of end diaphragms are the two major parameters. Based on the experimental results of all four specimens, their seismic behavior is critically examined, including hysteretic loops, ductility factor, dissipated energy, and failure mode, etc. It was found that both the thickness of end diaphragms and the location of prestressing strands at both ends of the specimens are insignificant when the specimens failed at the mid-span due to concrete crushing, and the proposed analytical model can be used to predict the load-displacement relationship of such bridges.     

Effect of epitaxial realignment on the leakage behavior of arsenic-implanted,as-deposited polycrystalline Si-on-single crystal Si diodes

When dopants are indiffused from a heavily implanted polycrystalline silicon film deposited on a silicon substrate, high thermal budget annealing can cause the interfacial “native” oxide at the polycrystalline silicon-single crystal silicon interface to break up into oxide clusters, causing epitaxial realignment of the polycrystalline silicon layer with respect to the silicon substrate. Anomalous transient enhanced diffusion occurs during epitaxial realignment and this has adverse effects on the leakage characteristics of the shallow junctions formed in the silicon substrate using this technique. The degradation in the leakage current is mainly due to increased generation-recombination in the depletion region because of defect injection from the interface.     

Gate and drain currents in off-state buried-type p-channel LDDMOSFETs

The buried-type p-channel LDD MOSFETs biased at high positive gate voltage exhibit novel characteristics: (1) the ratio of the drain to gate currents is about 1×10^-3 to 5×10^-3; and (2) the gate and drain currents both are functions of only the gate voltage minus the n-well bias. Such characteristics are addressed based on the formation of the surface n ⁺ inversion layer due to the punchthrough of the buried channel to the underlying shallow p-n junction. The measured gate current is due to the Fowler-Nordheim tunneling of electrons from this inversion layer surface and the holes generated within the high-field oxide constitute the drain current. The n⁺ inversion layer surface potential is found to be equal to the n-well bias plus 0.55 V. As a result, both the oxide field and the gate and drain currents are independent of drain voltage     

Mechanical behaviour of SiC fibre-reinforced titanium/titanium aluminide hybrid composites

The viability of developing an SiC fibre-reinforced titanium/titanium aluminide hybrid matrix composite was explored. The hybrid composites are expected to be used at temperatures beyond those attainable in conventional titanium matrix composites while improving the damage tolerance of the titanium aluminide matrix composites. The room-temperature mechanical characteristics studied were tensile strength, fracture toughness, low-cycle fatigue life and fatigue crack growth rate. The mechanisms of damage initiation and propagation under various loading conditions were also characterized. The directions for developing a satisfactory composite with hybrid titanium/titanium aluminide matrix are also addressed.     

Design model and guidelines for n-well guard ring in epitaxial CMOS

This work reports the development of design model for n-well guard rings in a CMOS process utilizing a low-doped epitaxial layer on a highly doped substrate. The validity of the model has been judged by a wide range of experimental data measured from the fabricated n-well guard ring structures with guard ring width as parameter. From the model developed, guidelines have been drawn to minimize the guard ring width while critically suppressing the amount of electrons escaping from the guard ring     

Scenario normalization techniques - inline stepper coordinator design

In this paper, the scenario normalization technique is addressed, which is very useful in the context of generic equipment control, where an equipment-control system (ECS) is to control several pieces of equipment, possibly of different types. This paper begins with a background introduction to a photolithographic cell and the concept of generic equipment control adopted in semiconductor fabs. The concept of message modulation that translates in semantics context the sequence flows between the high-level ECS and the low-level equipment is presented. The main idea relies on the operational scenarios modeling by the sequence diagram; message translation based on semantics analysis; the derivation of production rules and the implementation of them on an event-triggering platform. Scenarios, thus obtained and presented to the high-level ECS by the coordinator, are then in compliance with the normalized scenario as required by the generic equipment controller. The significance of the proposed normalization techniques has the following implication: when different equipment are included in a cell operation, it is not necessary to rewrite control programs but to add relatively simpler transformation sequences enabling the use of the standard ECS function. From the control point of view, the controlled systems of stepper and track can be modeled as discrete event dynamic ones if operation coordination is considered.