Magnetic and Morphological Properties of Electrodeposited Thick FePt Films on Metallic (Au, Ag, Cu) Underlayers

Electrodeposited thick films of FePt (with the nominal composition 50 % Fe/50 % Pt) on three metallic (Au, Ag, Au) underlayers were annealed at various temperatures. The magnetic and morphological properties of the resulting films were then monitored. The Au and Ag underlayers promoted the growth of the (bct) L1₀ FePt phase. The greater growth of this phase in the films deposited on the Ag underlayer led to the crystallographic texturing in the (001) direction. This was accompanied by a significant magnetic anisotropy and a negative shift of the remanent magnetization in the presence of an applied field. The coercivity of the Ag underlayer films increased to 18 kOe while the coercivity of the Au underlayer films decreased to ～2 kOe when the annealing temperature was increased to 800 ^°C.     

Unique nanostructures in NiCo alloy nanowires

NiCo alloy nanowires have been fabricated by electrodeposition using an anodized aluminum oxide (AAO) template. Single-crystalline and polycrystalline alloy nanowires have been obtained, and their microstructure was strongly dependent on the deposition conditions (current density and composition). In addition, unique nanostructures have been observed in NiCo alloy nanowires. Bamboo or layer structures were found for 15 and 25 at.% Co, respectively. The investigation of the mechanisms shows that these particular structures are related to the different diffusion rates of Ni and Co on the surface of the AAO template. The work demonstrates that as well as single-crystalline and polycrystalline nanowires, other unique nanostructures (layered and bamboo in this work) can be achieved through careful control of the preparation conditions.     

Diffusion induced columnar structure, high perpendicular anisotropy and low transformation temperature in thick FePt films

Thick FePt films (800 nm) were deposited by electroplating using Ag electrode. 2 at.% Ag doping into the electrolyte can lead to a columnar structure after annealing. The annealed film shows a high coercivity and perpendicular anisotropy. The additive of Ag can also significantly reduce fct-phase ordering temperature to 400 °C, comparing with an ordering temperature of 700 °C without Ag doping. The diffusion from Ag electrode and dopant is attributed to the formation of columnar structure, perpendicular anisotropy and reduced ordering temperature.     

Mechanisms of High Coercivity in Ni/NiO Composite Films by Post Annealing

A coercivity as large as 2.4 kOe has been achieved in the Ni/NiO composite film after an annealing under a magnetic field of 10 kOe and an O2 partial pressure of 0.001 torr. The coercivity was attributed to the strong exchange coupling of Ni and NiO. Small grain size of Ni and NiO was observed after the post-annealing. The enhanced coercivity is probably associated with the domain wall pinning by local energy minima, the distribution of Ni and NiO, and the domain structure in the interface of Ni/NiO generated under the presence of the magnetic field during the post-annealing.     

Ferroelectric properties of Pb(Zr0.52Ti0.48)O3–Bi3.25La0.75Ti3O12 ceramics

The ceramic samples of compound (1 ? x)Pb(Zr_0.52Ti_0.48)O₃–xBi_3.25La_0.75Ti₃O₁₂ (when x = 0, 0.03, 0.05, 0.07, 0.10, 0.15 and 0.20) were prepared by a solid-state mixed oxide method. X-ray diffraction analysis showed that complete solid solutions occurred for all compositions. Perovskite phase with tetragonal crystal structure and corresponding lattice distortion was observed. Scanning electron micrographs of sample surfaces showed equiaxed grains for all compositions. Ferroelectric measurements revealed that the addition of small amount of BLT (x = 0.03) showed high remanent polarization (～33.5 μC cm^?2) and low coercive field (～2.74 kV mm^?1). Further increasing BLT content could maintain ferroelectric properties of PZT–BLT ceramics. Based on this study, ferroelectric properties of this PZT–BLT ceramic system can be improved for being further used in ferroelectric memory applications.