Superconducting properties of Pb/Ag multilayers

The electrical resistivity, ac susceptibility, critical current density, and Josephson tunneling of Pb/Ag multilayers have been measured in wide temperature ranges in order to study the proximity effect. A resistivity drop was found to occur atT _c of Pb in versusT measurement and, at low temperature, the multilayers show proximity effect. The I-V characteristic of the multilayer shows voltage steps, indicating a resistive state has occurred in the sample. The superconducting properties of the multilayer were analyzed with the bilayer theory of the proximity effect.     

Development of an integrated look-ahead dynamics-based NURBS interpolator for high precision machinery

Methodologies for planning motion trajectory of parametric interpolation such as non-uniform rational B-spline (NURBS) curves have been proposed in the past. However, most of the algorithms were developed based on the constraints of feedrate, acceleration/deceleration (acc/dec), jerk, and chord errors. The errors caused by servo dynamics were rarely included in the design process. This paper proposes an integrated look-ahead dynamics-based (ILD) algorithm which considers geometric and servo errors simultaneously. The ILD consists of three different modules: a sharp corner detection module, a jerk-limited module, and a dynamics module. The sharp corner detection module identifies sharp corners of a curve and then divides the curve into small segments. The jerk-limited module plans the feedrate profile of each segment according to the constraints of feedrate, acc/dec, jerk, and chord errors. To ensure that the contour errors are bounded within the specified value, the dynamics module further modifies the feedrate profile based on the derived contour error equation. Simulations and experiments are performed to validate the ILD algorithm. It is shown that the ILD approach improves tracking and contour accuracies significantly compared to adaptive-feedrate and curvature-feedrate algorithms.     

A Statistical Control Chart for Stationary Process Data

In the statistical process control environment, a primary method to deal with autocorrelated data is the use of a residual chart. Although this methodology has the advantage that it can be applied to any autocorrelated data, it needs some modeling effort in practice. In addition, the detection capability of the residual chart is not always great. This article proposes a statistical control chart for stationary process data. It is simple to implement, and no modeling effort is required. Comparisons are made among the proposed chart, the residual chart, and other charts. When the process autocorrelation is not very strong and the mean changes are not large, the new chart performs better than the residual chart and the other charts.     

Monitoring Process Variability for Stationary Process Data

Processes that arise naturally, for example, from manufacturing or the environment, often exhibit complicated autocorrelation structures. When monitoring such a process for changes in variance, accounting for that structure is critical. While charts for monitoring the variance of processes of independent observations and some specific autocorrelated processes have been proposed in the past, the chart presented in this article can handle a general stationary process. The performance of the proposed chart was examined through simulations for the first‐order autoregressive and first‐order autoregressive‐moving average processes and demonstrated with examples. Copyright © 2014 John Wiley & Sons, Ltd.     

Transcriptomic Analysis Suggests Auxin Regulation in Dorsal-Ventral Petal Asymmetry of Wild Progenitor Sinningia speciosa

The establishment of dorsal–ventral (DV) petal asymmetry is accompanied by differential growth of DV petal size, shape, and color differences, which enhance ornamental values. Genes involved in flower symmetry in Sinningia speciosa have been identified as CYCLOIDEA (SsCYC), but which gene regulatory network (GRN) is associated with SsCYC to establish DV petal asymmetry is still unknown. To uncover the GRN of DV petal asymmetry, we identified 630 DV differentially expressed genes (DV-DEGs) from the RNA-Seq of dorsal and ventral petals in the wild progenitor, S. speciosa ‘ES’. Validated by qRT-PCR, genes in the auxin signaling transduction pathway, SsCYC, and a major regulator of anthocyanin biosynthesis were upregulated in dorsal petals. These genes correlated with a higher endogenous auxin level in dorsal petals, with longer tube length growth through cell expansion and a purple dorsal color. Over-expression of SsCYC in Nicotiana reduced petal size by regulating cell growth, suggesting that SsCYC also controls cell expansion. This suggests that auxin and SsCYC both regulate DV petal asymmetry. Transiently over-expressed SsCYC, however, could not activate most major auxin signaling genes, suggesting that SsCYC may not trigger auxin regulation. Whether auxin can activate SsCYC or whether they act independently to regulate DV petal asymmetry remains to be explored in the future.     

Weak inversion charge injection in analog MOS switches

The on-chip test circuit for examining the charge injection in analog MOS switches has been described in detail, and has been fabricated and characterized. Mixed-mode circuit and device simulations have been performed, creating excellent agreements not only with the experimental waveforms but also with the measured switch-induced error voltage. Further investigation of the experimental and simulated results has separated the charge injection into three distinct components: i) the channel charges in strong inversion; ii) the channel charges in weak inversion; and iii) the charges coupled through the gate-to-diffusion overlap capacitance. Important observations concerning the weak inversion charge injection have been drawn from the waveform of the current through the switched capacitor. In this work the channel charges in weak inversion have exhibited a 20% contribution to the switch-induced error voltage on a switched capacitor     

Electron-beam treatment of aromatic hydrocarbons that can be air-stripped from contaminated groundwater. 2. Gas-phase studies

The electron-beam (EB) degradation of volatile aromatics (benzene, toluene, ethylbenzene, xylenes: BTEX) in groundwater strip gas, which in the present work has been modeled by the introduction of the desired aromatic(s) to a stream of air or another gas, such as oxygen, is initiated essentially by the addition of *OH radicals to the aromatic ring, giving rise to hydroxycyclohexadienyl radicals, which form the corresponding peroxyl radicals upon addition of oxygen. As studied in some detail with benzene as a BTEX representative, various reactions of these lead to numerous oxidation products in a cascade of reactions, including the decomposition of products under the prevailing conditions of high turnover of the initial aromatic. Importantly, hydroxycyclohexadienylperoxyl radical formation is partly reversible, and the reactions of the hydroxycyclohexadienyl radicals, which thus have a significant presence in these systems, must therefore also be taken into consideration. In the gas phase, in contrast to the aqueous phase (see Part 1), the reactions of the hydroxycyclohexadienyl radicals lead to oligomeric products that appear to contribute, in addition to ionic clusters, to nucleation for the aerosols observed. Various nitrated products, among them nitrophenols, are observed when air is used for the stripping. However, these studies did not clear the pilot plant stage, since BTEX degradation using a bioreactor carried out in parallel was so successful that the EB technology was judged to be noncompetitive. As for the latter, expensive equipment consisting of a stripper, the EB machine, and an aerosol precipitator would be required. The condensed aerosols are biorefractory and would require further treatment for detoxification.     

A dual-phase charge pump circuit with compact size

In this paper, a regulated dual-phase charge pump with compact size is presented. By means of a nano-ampere switched-capacitor voltage reference (SCVR) circuit, the dual-phase charge pump regulator can reduce the quiescent current and the output ripple. Besides, a new power stage is proposed to define the stability of the overall system. Owing to the design of buffer stage, the charge pump regulator can extend bandwidth and increase phase margin. Thus, the transient response and driving capability can be improved. Beside, the proposed automatic body switching circuit can efficiently drive the bulk of the power p-type MOSFETs to avoid leakage and potential latch-up. This chip was fabricated by TSMC 0.35 μm, 3.3 V/5 V 2P4 M CMOS technology. The input voltage range varies from 2.9 to 4.9 V for the lithium battery and the output voltage is regulated at 5 V. Experimental results demonstrate the charge pump can provide 50 mA maximum load current without any oscillation problems.