Rare-earth free sensitizer in NaLuCrF4:Er upconversion material

Upconversion phosphors are known as a material system that can convert near-infrared light into visible/ultraviolet emissions by sequentially absorbing multiple photons. The studies on upconversion materials often use two rare earth (RE) ions as a sensitizer-activator pair. We investigated the influences on luminescence intensity depending on Cr-doping content (x) of hexagonal NaLu_0.98–xCr_xF₄Er_0.02 (x = 0–0.9) upconversion material by substituting Lu³⁺ ions with Cr³⁺in the absence of Gd³⁺. The change in upconversion luminescence intensity appears with saddle-like shape. We suggest that Cr³⁺ ions play the dual role as a constituent in host lattice and a sensitizer in the upconversion process. Optimal conditions for gaining the strongest upconversion emission correspond to x = 0.3–0.5, where there are effective energy transfers between Cr³⁺ and Er³⁺ ions and CrEr dimers. Apart from these values, the emission intensity decreases rapidly which can be ascribed to the absence of multiple-photon absorption for the case of low Cr³⁺ contents, and to the coupling between Cr³⁺ and/or Er³⁺ ions for the case of high Cr³⁺ contents. Magnetization and electron-spin-resonant measurements were performed to understand the correlation between the optical and magnetic properties.     

Complications of chronic otitis media

In summary, recent literature indicates that the complications of chronic otitis media have been decreasing. However, even with the advent of modern and more powerful antimicrobials and aggressive surgical eradication of disease, the morbidity and mortality are still high. Some complications may initially be quite obvious and some complications may be quite subtle. Therefore, the most important tools in making early diagnosis are careful history and physical examination, and a high index of suspicion for impending complications.     

PMMA／PBA乳胶IPN阻尼材料的研究

用乳液聚合方法合成了一系列的互穿聚合物网络，其中包括：ＰＭＭＡ／ＰＢＡ和Ｐ（ＭＭＡ－ｃｏ－ＰＭＡ）／ＰＢＡ乳胶互穿聚合物网络（ＬＩＰＮ），ＰＭＭＡ／ＰＢＡ乳胶双向互穿聚合物网络（ＬＢＩＰＮ）以及ＰＭＭＡ／ＰＢＡ界面交联互穿聚合物网络（ＩＣＬＩＰＮ）。动态力学谱和拉伸试验结果表明：（１）ＰＭＭＡ／ＰＢＡ互穿聚合物网络的两组分相容性和阻尼性能可通过ＭＭＡ和ＰＭＡ共聚来改善；（２）双向互穿技术是一种行之     

Intelligent control of the feeding of aluminum electrolytic cells using neural networks

To be efficient, the control of alumina feeding of the electrolytic cell must be based on cell resistance, alumina concentration, and cell state. Most control schemes now in use are based on cell resistance only, and, thus, constitute an open-loop control that lacks robustness because their decision criteria are not explicitly tied to concentration nor to cell state. This results in the cell operating at nonoptimal concentrations, and cell efficiency is diminished. An optimal operation requires a knowledge of concentration and an adjustment of the decision criteria as a function of concentration. A learning vector quantization (LVQ) type of neural network was built and trained to recognize the cell state. Knowing the state of the cell and its resistance, concentration can be estimated using predetermined regression functions. The decision criteria for the control logic are then consequently adapted. A closed-loop control scheme is thus obtained. Results show that, with its control so structured, the cell can operate at or near optimal concentrations independently of its state. This flexible and intelligent character of the neural control can provide a considerable advantage as compared to the standard control.     

Unique ESD failure mechanisms during negative to Vcc HBM tests

HBM ESD tests on two types of 0.6 μm DRAM devices showed that internal circuit or output driver failures would occur after the input or I/O pins were ESD stressed negative with respect to Vcc at ground. These failures occurred at lower than expected ESD stress voltages due to power-up circuit interactions that either turned-on unique internal parasitic ESD current paths or disrupted the normal operation of the output pin’s ESD protection circuit. ESD analysis found there exists a set of power-up sensitive circuits and if placed near a Vcc bond pad can result in low voltage ESD failures.     

High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping andInGaAs emitter contacts

The authors have developed a modified MBE growth process to produce high-gain n-p-n GaAs-AlGaAs heterojunction bipolar transistors (HBTs) with a mean time to failure (MTTF) of 1.5×10⁸ h at 125°C. Beryllium incorporation and diffusion are controlled through a combination of reduced substrate temperature and increased As/Ga flux ratio during MBE growth, resulting in extremely stable HBT profiles. The authors also demonstrate graded InGaAs surface layers with nonalloyed refractory metal contacts that significantly improve ohmic reliability compared to alloyed AuGe contacts. The ability to produce robust HBTs by MBE is critically important to this technology     

Coupling techniques in boundary-combined methods for solving elliptic problems with singularities

Three coupling strategies in matching the Ritz-Galerkin method and the finite element method are introduced for general elliptic equations, and useful numerical techniques are provided. Numerical experiments have been carried out for solving the typical, singular Motz problem, which shows that optimal convergence rates of numerical solutions can be achieved by using the combined methods and techniques provided in this paper.     

Application of genetic algorithm-based intuitionistic fuzzy weighted c-ordered-means algorithm to cluster analysis

Knowledge and Information Systems - With the advance of information technology, many fields have begun using data clustering to reveal data structures and obtain useful information. Most of the...