EC Analysis of Multi-Antenna System over 5G and Beyond Networks and its Application to IRS-Assisted Wireless Systems

Wireless Personal Communications - Recently, the theory of effective rate has attracted much attention, since it can take the delay aspect into account when performing channel capacity analysis. In...     

Domain Adaptation for POS Tagging with Contrastive Monotonic Chunk-wise Attention

Neural Processing Letters - Part of Speech (POS) tagging is a sequential labelling task and one of the core applications of Natural Language Processing. It has been a challenging problem for the...     

Impact of Mole Fractions due to Work Function Variability (WFV) of Metal Gate on Electrical Parameters in Strained SOI-FinFET

In the recent sub-20 nm technology node, the process variability issues have become a major problem for scaling of MOS devices. We present a design for a strained Si/SiGe FinFET on an insulator using a 3D TCAD simulator. The impact of metal gate work function variability (WFV) on electrical parameters is studied. Such impact of WFV for different mole fractions (x) of the SiGe layer in a strained SOI-FinFET with varying grain size is presented. The results show that as the mole fraction is increased, the variability in threshold voltage (σVT) and off current (σIoff) is decreased; while, the variability of on-current (σIon) is increased. A notable observation is the distribution of electrical parameters approaches a normal distribution for smaller grain sizes.     

An empirical study of information technology enabled business process redesign and corporate competitive strategy

Business process redesign (BPR) has been widely touted as a means for leveraging the power of information technology to change business processes radically, resulting in substantial improvements in organizational effectiveness and efficiency. This study represents an early attempt at examining the strategic nature of the phenomenon. Because BPR is radical change and has the ability to alter both the competitive and operational nature of the corporation, it is critical that BPR be coordinated with corporate strategy. Through a survey of information system executives, the relationships between corporate competitive strategy and three types of BPR – intrafunctional, interfunctional and interorganizational – were examined. It was found that organizations following a cost strategy tended to do more BPR projects on interfunctional processes. Furthermore, the positive effect of a cost strategy on interfunctional BPR was found to be strengthened by the degree of integration of IS and business planning. It was also found that while interorganizational BPR was not related to a specific strategy, it was strongly related directly with IS–business planning integration.     

Cut off frequency and transit time analysis of lightly doped drain (LDD) MOSFETs

Analytical model for the transconductance, cut off frequency, transit time and fringing capacitance of LDD MOSFETs is presented with a simple approach. The analysis is carried out considering the LDD device as a conventional MOSFET with a series resistance [Z.-H. Liu et al., Threshold voltage model for submicrometer MOSFETs. IEEE Trans Electron Devices 1993; ED-40: 86–94] and a simple closed form expressions for cut off frequency and transit time is obtained. The total gate capacitance, i.e. the geometric and fringing capacitance, is calculated for both LDD and non-LDD devices and lower fringing capacitance is reported in LDD devices. Lower cut-off frequencies and higher transit time are reported in LDD devices for the same channel length.     

Optimal capacity placement for path restoration in STM or ATMmesh-survivable networks

The total transmission capacity required by a transport network to satisfy demand and protect it from failures contributes significantly to its cost, especially in long-haul networks. Previously, the spare capacity of a network with a given set of working span sizes has been optimized to facilitate span restoration. Path restorable networks can, however, be even more efficient by defining the restoration problem from an end to end rerouting viewpoint. We provide a method for capacity optimization of path restorable networks which is applicable to both synchronous transfer mode (STM) and asynchronous transfer mode (ATM) virtual path (VP)-based restoration. Lower bounds on spare capacity requirements in span and path restorable networks are first compared, followed by an integer program formulation based on flow constraints which solves the spare and/or working capacity placement problem in either span or path restorable networks. The benefits of path and span restoration, and of jointly optimizing working path routing and spare capacity placement, are then analyzed     

Pharmacology of ATP-sensitive potassium channel (KATP) openers in models of myocardial ischemia and reperfusion

Cancer cells release various antigens, some of which appear in the urine. Oral autourotherapy is suggested as a new treatment modality for cancer patients. It will provide the intestinal lymphatic system with the many tumor antigens against which antibodies may be produced. These antibodies may be pierced through the blood stream and attack the tumor and its cells.     

Microstructural Investigation on Failure of Internal Drive Shaft

17-4 PH stainless steel is used as internal drive shaft material in liquid engine pumps. One of the drive shafts failed during operation. The shaft pieces were in contact for short duration after failure, which has resulted in abrasion of fractured surfaces. Samples from the location of failure were taken, and investigation of the failure was carried out using optical and scanning electron microscopy. The microstructural analysis of the material and fractographic analysis of the fractured surface show that the failure was caused by excessive torsion.     

Electrosynthesis and impedance studies on zinc selenide

Electrochemical impedance measurements have been used to characterize zinc selenide films prepared by electrochemical co-deposition at a platinum rotating disk electrode. Estimations of capacitance and polarization resistance of variously prepared electrodeposits have been carried out to determine charge carrier density and corrosion rates.