Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma

Ultra thin (5 nm) silicon oxynitride (SiON) films were fabricated at a low temperature using nitrogen plasma generated by an inductively coupled plasma system. Effects of post-metalization annealing (PMA) of Al/SiON/Si MOS structure on the electrical properties of the SiON films were studied and correlations between the charge trapping states and the leakage current were established. Positive charge trapping by interface states generated by plasma damage was characterized by the hysteresis in high-frequency capacitance-voltage (C-V) characteristics. Hysteresis was observed to be completely removed by PMA while interface state density at the Si mid band gap reduced from 2.2×10¹³ to 3.7×10¹¹/eV/cm² and the oxide fixed charge density changed from 3.3×10¹² to −4×10¹¹/cm². The leakage current also decreased significantly, by more than two orders of magnitude, with PMA. The analysis of the leakage current using trap assisted tunneling (TAT) mechanism indicated that with PMA, the trap energy level in the SiON film becomes shallower from 1.3 to 0.7 eV. The positive trapped charges were observed to be annihilated by PMA and the trapping sites became neutral trap centers in the SiON film. This could lead to the reduction in the leakage current component given rise to by TAT.     

Optical circulator consisting of a YIG spherical lens, PANDA-fibre polarisers and a fibre-optic polarising beam splitter

A novel optical circulator is reported which employs an yttrium-iron-garnet (YIG) sphere, PANDA-fibre polarisers and a fibre-optic polarising beam splitter. The splitting ratios of the fibre-optic polarising beam splitter were 1.0:99.0 for x-polarisation and 97.5:2.5 for y-polarisation, with an excess loss of 0.5 dB at 1.30 ?m wavelength. The backward isolation of the optical circulator was 30 dB with the total insertion loss of 4.5 dB.     

Linearity stablized fiber-optic thermometer using pseudo-heterodyne phase detection

A temperature sensor using a fiber-optic Fabry-Perot interferometer is described. A pseudo-heterodyne detection scheme is adopted to read the light phase difference in the Fabry-Perot interference output. A higher harmonic components comparison method is used to stabilize the system and to increase detection linearity. This system realizes not only highly sensitive temperature sensing with good linearity and minimal adjusting error, but also application to the sensing of other physical quantities such as vibrations. Additionally, the signal-to-noise ratio and distortion of the detected signal are investigated as functions of fiber end reflectivity. These results will be useful in designing a high performance fiber-optic Fabry-Perot thermometer.     

Clinical and serological study of tsutsugamushi disease in northern Osumi, Kagoshima Prefecture

We report 34 cases of tsutsugamushi disease seen from 1989 to 1993 at Yagi Clinic, northern Osumi, Kagoshima Prefecture. Nineteen patients (55.9%) showed the highest antibody titers against the Kawasaki strain Orientia tsutsugamushi (Ot) and 13 (38.2%) against the Kuroki strain Ot. It is suggested that two antigenic types (Kawasaki and Kuroki) of Ot were distributed in Kagoshima Prefecture, and the Kawasaki type Ot more or less dominates Kuroki type Ot. There was no difference in clinical features between the two groups of patients.     

Right atrial contractile performance in patients with myocardial infarction

To evaluate right atrial (RA) contractile performance in patients with myocardial infarction, we validated a cineangiographic method of RA volume measurement, and investigated RA volume change in 'normal' individuals and patients with a previous myocardial infarction. Sixteen silicone rubber RA casts made from human cadavers were filmed in the postero-anterior and left lateral projections. The cast volumes calculated following Simpson's rule were in good agreement with those measured by water replacement (r = 0.992, P < 0.01). At cardiac catheterization, biplane RA cineangiography was performed in 19 'normal' individuals (N group), in 14 patients with a previous antero-septal infarction (AMI group) and in seven patients with a previous inferior infarction (IMI group). The RA volume-time curve was constructed at 20-40 ms intervals for one cardiac cycle. RA volume at the beginning of the atrial contraction (RAVd), which was defined as the 'preload' of the RA, tended to be larger in both the AMI and IMI groups compared with 'normal' individuals. The RA ejection volume was significantly larger in both the AMI (18.4 +/- 2.1 ml.m-2, P < 0.01) and IMI groups (19.4 +/- 2.8, P < 0.01) than in the N group (14.5 +/- 1.9), even for a comparable level of RAVd (range from 26 to 36 ml.m-2) (18.6 +/- 2.1, P < 0.01, 18.2 +/- 2.0, P < 0.01, 14.7 +/- 1.9, respectively). These results suggest that RA contraction increases in patients with myocardial infarction by increasing both the 'preload' and 'contractility' of the RA.     

A 0.1-μm delta-doped MOSFET fabricated with post-low-energyimplanting selective epitaxy

A simple fabrication technology for delta-doped MOSFETs, named post-low-energy implanting selective epitaxy (PLISE) is presented. The PLISE technology needs no additional photo-lithography mask, deposition step or etching step even for CMOS devices. The only additional step is growing undoped epitaxial channel layers by UHV-CVD after the channel implantation. With this technology, delta-doped NMOSFETs with 0.1-μm gate length were successfully fabricated. By optimizing the epi-layer thickness and the channel doping level, short-channel effects are suppressed enough to achieve 0.1-μm gate length. Moreover, the junction capacitance at zero bias is reduced by 50%     

Thermal stability of interfaces between metals and InP-based materials

The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively. Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor interfaces were the most stable.     

Thiamine pyrophosphatase activity in the Golgi apparatus of calcitonin-treated osteoclasts.

The thiamine pyrophosphatase (TPPase) activity described by Novikoff and Goldfisher was examined in osteoclasts affected by calcitonin in order to elucidate whether the morphological and functional changes of the osteoclasts have an influence over the secretion function of their Golgi apparatus. The Golgi apparatus of osteoclasts of which the ruffled border had disappeared and bone resorption discontinued as the result of treatment with calcitonin showed a slight TPPase activity. The reaction products of the enzyme in these inactive osteoclasts were distinctly fewer than that of control osteoclasts, which were not affected by calcitonin. From these results, it is suggested that there may be a connection between the morphological and functional changes of osteoclasts and the secretion function of the Golgi apparatus.