Electrical characterization of very-narrow-gap bulk HgCdTe single crystals by variable magnetic field hall measurements

Variable-magnetic-field Hall measurements (0 to 1.5 T) are performed on very-narrow-gap bulk-grown Hg_1−xCd_xTe single crystals (0.165 ≤ x ≤ 0.2) at various temperatures (10 to 300K). The electron densities and mobilities are obtained within the one-carrier (electrons) approximation of the reduced-con-ductivity-tensor scheme. The present data together with the selected data set reported by other workers exhibit a pronounced peak when the electron mobility is plotted against the alloy composition x-value which has been predicted to be due to the effective-mass minimum at the bandgap-crossing (E_g ≈ 0). The observed position (x ≈ 0.165), height (≈4 x 10² m²Vs), and width (≈0.01 in x) of the mobility-peak can be explained by a simple simulation involving only ionized-impurity scattering. A lower bound of the effective mass is introduced as a fitting parameter to be consistent with the finiteness of the observed electron mobility and is found to be of the order of 10⁻⁴ of the mass of a free electron.     

Expression of a functional anaphylatoxin C3a receptor by astrocytes

Human astrocyte cell lines reportedly contain a specific receptor for the complement anaphylatoxin C3a based on ligand-binding studies, functional responses, and RNA analysis by RT-PCR. Uptake of 125I-C3a by astrocytes was specific and reversible. Scatchard analysis indicated the presence of two classes of binding sites. High-affinity binding sites were abundantly expressed (20,000-80,000 sites per cell) with an estimated K(D) of 1-2 nM. Low-affinity binding sites with a K(D) of 209 nM were largely expressed (n > or = 4 x 10(6) sites per cell) and probably did not reflect a receptor-mediated binding, but rather an ionic interaction between C3a and the membrane. Analysis of astrocyte mRNA by RT-PCR with three different sets of primers covering 60% of the C3a receptor (C3aR) mRNA sequence indicated that glial C3aR was identical to the leukocytic one. Western blot analysis using a specific anti-C3aR evidenced a C3aR with a molecular mass of 60,000 Da. C3a and a superagonist peptide, E7, induced a transient increase of intracellular [Ca2+] in primary culture of astrocytes. Treatment of the ligands by carboxypeptidase B to eliminate the C-terminus Arg considerably decreased the [Ca2+] response. Moreover, flow cytometry experiments demonstrated the expression of C3aR on normal rat astrocyte membrane. This report brings new insight for the role of the complement system in the brain inflammation response.     

Improved arsenic doping in metalorganic chemical vapor deposition of HgCdTe andin situ growth of high performance long wavelength infrared photodiodes

Controlled and effective p-type doping is a key ingredient forin situ growth of high performance HgCdTe photodiode detectors. In this paper, we present a detailed study of p-type doping with two arsenic precursors in metalorganic chemical vapor deposition (MOCVD) of HgCdTe. Doping results from a new precursortris-dimethylaminoarsenic (DMAAs), are reported and compared to those obtained from tertiarybutylarsine (TBAs). Excellent doping control has been achieved using both precursors in the concentration range of 3 × 1015-5 × 10¹⁷ cm⁻³ which is sufficient for a wide variety of devices. Arsenic incorporation efficiency for the same growth temperature and partial pressure is found to be higher with DMAAs than with TBAs. For doping levels up to 1 × 10₁₇ cm⁻³, the alloy composition is not significantly affected by DMAAs. However, at higher doping levels, an increase in the x-value is observed, possibly as a result of surface adduct formation of DMAAs dissociative products with dimethylcadmium. The activation of the arsenic as acceptors is found to be in the 152–50% range for films grown with DMAAs following a stoichiometric anneal. However, a site transfer anneal increases the acceptor activation to near 100%. Detailed temperature dependent Hall measurements and modeling calculations show that two shallow acceptor levels are involved with ionization energies of 11.9 and 3.2 meV. Overall, the data indicate that DMAAs results in more classically behaved acceptor doping. This is most likely because DMAAs has a more favorable surface dissociation chemistry than TBAs. Long wavelength infrared photodiode arrays were fabricated on P-on-n heterojunctions, grownin situ with iodine doping from ethyl iodide and arsenic from DMAAs on near lattice matched CdZnTe (100) substrates. At 77K, for photodiodes with 10.1 and 11.1 (im cutoff wavelengths, the average (for 100 elements 60 × 60 μm² in size) zero-bias resistance-area product, R₀A are 434 and 130 ohm-cm², respectively. Quantum efficiencies are ≥50% at 77K. These are the highest R₀A data reported for MOCVDin situ grown photodiodes and are comparable to state-of-the-art LPE grown photodiodes processed and tested under identical conditions.     

A posteriori error estimators for the fully discrete time dependent Stokes problem with some different boundary conditions

In this paper we study the time dependent Stokes problem with some different boundary conditions. We establish a decoupled variational formulation into a system of velocity and a Poisson equation for the pressure. Hence, the velocity is approximated with curl conforming finite elements in space and Euler scheme in time and the pressure with standard continuous elements in space and Euler scheme in time. Finally, we establish optimal a priori and a posteriori estimates.     

Precision poly-(dimethyl siloxane) masking technology for high-resolution powder blasting

Powder blasting micro-erosion is a fast and flexible technique for the micropatterning of brittle materials. We have combined 10 /spl mu/m diameter Al/sub 2/O/sub 3/ eroding particles with a new masking technique to realize the smallest possible structures with the powder blasting process (30 /spl mu/m). Our masking technology is based on the sequential combination of two polymers: 1) the brittle epoxy resin SU8 for its photosensitivity and 2) the elastic and thermo-curable poly-(dimethyl siloxane) (PDMS) for its large erosion resistance. We have micropatterned glass microstructures with aspect ratio 1 and structural details down to 20 /spl mu/m. We compare the mask size-dependent etching rate using both 1.0 and 30 jam diameter Al/sub 2/O/sub 3/ particles and find a decreasing etching rate for structures that are smaller than about 10 times the particle size. Combining SU8 with PDMS proves to be a very easy and accurate masking technology that allows exploring the fundamental dimensional limits of the powder blasting micro-erosion process.     

Synthesis of branched 'nanotrees' by controlled seeding of multiple branching events

The formation of nanostructures with controlled size and morphology has been the focus of intensive research in recent years. Such nanostructures are important in the development of nanoscale devices and in the exploitation of the properties of nanomaterials. Here we show how tree-like nanostructures ('nanotrees') can be formed in a highly controlled way. The process involves the self-assembled growth of semiconductor nanowires via the vapour-liquid-solid growth mode. This bottom-up method uses initial seeding by catalytic nanoparticles to form the trunk, followed by the sequential seeding of branching structures. Each level of branching is controlled in terms of branch length, diameter and number, as well as chemical composition. We show, by high-resolution transmission electron microscopy, that the branching mechanism gives continuous crystalline (monolithic) structures throughout the extended and complex tree-like structures. The controlled seeding method that we report here has potential as a generic means of forming complex branching structures, and may also offer opportunities for applications, such as the mimicking of photosynthesis in nanotrees.     

LF55GN Photosensitive Flexopolymer: A New Material for Ultrathick and High-Aspect-Ratio MEMS Fabrication

A growing interest in the development of thick functional structures with high aspect ratio for microelectromechanical system (MEMS) applications has triggered the investigation of several polymer materials. This paper presents LF55GN flexopolymer material as a new negative-tone photoresist to fabricate ultrathick MEMS microstructures. Up to 4-mm-thick layers are obtained using a casting method in a single photolithography step. Standard UV illumination is used to polymerize such thick microstructures in less than 1 min and with an aspect ratio up to 27. We have fabricated microstructures on rigid, flexible, and stepped substrates. Using oblique UV exposure, tilted pillars are achieved with an angle of 25deg to the substrate normal. Due to the elastomeric nature of the LF55GN flexopolymer, the microstructures can be easily deformed without causing any stress-related problems.     

Generation of size-selected gold nanoparticles by spark discharge — for growth of epitaxial nanowires

One-dimensional semiconductor nanowires are a promising candidate for future electronic devices. The epitaxial growth of nanowires is often mediated by metal seed particles, usually gold particles. In this paper the setup of a simple and robust technique to generate nanometer-sized aerosol gold particles by spark discharge is described. Furthermore we demonstrate for the first time that particles generated by spark discharge can be used to design advanced nanoelectronic structures, namely nanowires. In order to obtain compact, spherical particles suitable for nanowire growth, the sparkgenerated agglomerate particles were reshaped in a special compaction furnace. The reshaped particles were used to seed the growth of epitaxial GaP and InP nanowires, by metal organic vapor phase epitaxy, which was shown to be a reliable and reproducible method. This work indicates the possibility of using spark-discharge generated gold particles for the creation of new electronic devices even at large scale processing.     

Calgary Depression Scale for Schizophrenia: a study of the validity of a French-language version in a population of schizophrenic patients

A case report of outpatient maintenance electroconvulsive therapy (ECT) is presented in a patient with bipolar disorder type I refractory to conventional medication treatment but responsive to ECT. A cost comparison is made showing substantial savings when outpatient maintenance ECT is used in lieu of inpatient hospitalization with ECT. A detailed life chart illustrating multiple medication trials that failed to stabilize the patient accompanies the financial summary. This case highlights the advantages of outpatient maintenance ECT for bipolar depression particularly with regard to safety, efficacy, and significant health care cost reduction.