Analyse flüchtiger Inhaltsstoffe des Holunders

European Food Research and Technology - Die Analyse und Identifizierung von Aromastoffen mittels GC/MS-Technik aus Holunderbeeren und -blüten wird beschrieben. Durch Extraktion mit...     

The use of aluminium doped ZnO as transparent conductive oxide for CdS/CdTe solar cells

CdTe/CdS and CdTe/ZnO thin film solar cells were grown with a high vacuum evaporation based low temperature process (≤ 420 °C). Aluminium doped zinc oxide (AZO) was used as transparent conducting oxide (TCO) material. AZO exhibited excellent stability during the solar cell processing, and no significant change in electrical conductivity or transparency was observed. The current density loss due to absorption in the 1 μm thick AZO layer with 5 Ω per square sheet resistance was found to be 1.2 mA/cm². We investigated the influence of an intrinsic ZnO layer (i:ZnO) in combination with various CdS thicknesses. The i:ZnO layer was found to significantly increase the open circuit voltage of the solar cells with very thin CdS layer. Increasing thickness of the i:ZnO layer leads to UV absorption losses, narrowing of the depletion layer width and hence reduced collection efficiency in the long wavelength (685-830 nm) part. With AZO/i:ZnO bi-layer TCO we could achieve cell efficiencies of 15.6% on glass and 12.4% on the flexible polyimide film.     

A monolithically integrated high‐efficiency Cu(In,Ga)Se2 mini‐module structured solely by laser

Monolithically integrated Cu(In,Ga)Se₂ mini‐modules were fabricated in order to reduce the width of patterning related dead area. The Cu(In,Ga)Se₂ layers were prepared on soda‐lime glasses using the multistage process at low substrate temperature below 500 °C. A picosecond laser with a wavelength of 532 nm was used for all of the structuring processes (P1, P2, and P3) for the monolithic integration. A “lift‐off” type structuring was applied for P1 and P3, and an “ablation” type was for P2. The laser structuring was optimized to be minimizing the dead area width, and the width of about 70 µm was successfully achieved. A mini‐module, in which the optimized structuring processes were applied for the integration, demonstrated a certified efficiency of 16.6%. Copyright © 2015 John Wiley & Sons, Ltd.     

Interplay between Endothelin and Erythropoietin in Astroglia: The Role in Protection against Hypoxia

We show that, under in vitro conditions, the vulnerability of astroglia to hypoxia is reflected by alterations in endothelin (ET)-1 release and capacity of erythropoietin (EPO) to regulate ET-1 levels. Exposure of cells to 24 h hypoxia did not induce changes in ET-1 release, while 48–72 h hypoxia resulted in increase of ET-1 release from astrocytes that could be abolished by EPO. The endothelin receptor type A (ETA) antagonist BQ123 increased extracellular levels of ET-1 in human fetal astroglial cell line (SV-FHAS). The survival and proliferation of rat primary astrocytes, neural precursors, and neurons upon hypoxic conditions were increased upon administration of BQ123. Hypoxic injury and aging affected the interaction between the EPO and ET systems. Under hypoxia EPO decreased ET-1 release from astrocytes, while ETA receptor blockade enhanced the expression of EPO mRNA and EPO receptor in culture-aged rat astroglia. The blockade of ETA receptor can increase the availability of ET-1 to the ETB receptor and can potentiate the neuroprotective effects of EPO. Thus, the new therapeutic use of combined administration of EPO and ETA receptor antagonists during hypoxia-associated neurodegenerative disorders of the central nervous system (CNS) can be suggested.     

CdTe/CdS thin film solar cells grown in substrate configuration

The ability to grow efficient CdTe/CdS solar cells in substrate configuration would not only allow for the use of non‐transparent and flexible substrates but also enable a better control of junction formation. Yet, the problems of barrier formation at the back contact as well as the formation of a p–n junction with reduced recombination losses have to be solved. In this work, CdTe/CdS solar cells in substrate configuration were developed, and the results on different combinations of back contact materials are presented. The Cu content in the electrical back contact was found to be a crucial parameter for the optimal CdCl₂‐treatment procedure. For Cu‐free cells, two activation treatments were applied, whereas Cu‐containing cells were only treated once after the CdTe deposition. A recrystallization behavior of the CdTe layer upon its activation similar to superstrate configuration was found; however, no CdTe–CdS intermixing could be observed when the layers were treated consecutively. Remarkably high V_OC and fill factor of 768 mV and 68.6%, respectively, were achieved using a combination of MoO₃, Te, and Cu as back contact buffer layer resulting in 11.3% conversion efficiency. With a Cu‐free MoO₃/Te buffer material, a V_OC of 733 mV, a fill factor of 62.3%, and an efficiency of 10.0% were obtained. Copyright © 2012 John Wiley & Sons, Ltd.     

Electronic properties of Cu(In,Ga)Se2 solar cells on stainless steel foils without diffusion barrier

Compared with rigid glass, manufacturing of Cu(In,Ga)Se₂ (CIGS) solar cells on flexible stainless steel (SS) substrates has potential to reduce production cost because of the application of roll‐to‐roll processing. Up to now, high‐efficiency cells on SS could only be achieved when the substrate is coated with a barrier layer (e.g. SiO_x or Si₃N₄) for hindering the diffusion of impurities, especially Fe, into the CIGS layer. In this paper, the effect of these impurities on the electronic transport properties of the device is investigated. Using admittance spectroscopy, the presence of a deep defect level at around 320 meV is observed, which deteriorates the efficiency of the solar cells. Furthermore, it is shown that reducing substrate temperature during CIGS deposition is an effective alternative to a barrier layer for reducing diffusion of detrimental Fe impurities into the absorber layer. By applying a CIGS growth process for deposition at low substrate temperatures, an efficiency of 17.7%, certified by Fraunhofer Institute ISE, Freiburg, was achieved on Mo/Ti‐coated SS substrate without an additional metal‐oxide or metal‐nitride impurity diffusion barrier layer. Copyright © 2012 John Wiley & Sons, Ltd.     

Influence of Ni and Cr impurities on the electronic properties of Cu(In,Ga)Se2 thin film solar cells

Deposition of Cu(In,Ga)Se₂ (CIGS) thin film solar cells on metallic substrate is an attractive approach for development of low cost solar modules. However, in such devices, special care has to be taken to avoid diffusion of impurities, such as Fe, Ni, and Cr, from the substrate into the active layers. In this work, the influence of Ni and Cr impurities on the electronic properties of CIGS thin film solar cells is investigated in detail. Impurities were introduced into the CIGS layer by diffusion during the CIGS deposition process from a Ni or Cr precursor layer below the Mo electrical back contact. A high temperature and a low temperature CIGS deposition process were applied in order to correlate the changes in the photovoltaic parameters with the amount of impurities diffused into the absorber layer. Solar cells with Ni and Cr impurities show a reduction in the device performance, whereas the effect was most pronounced in Ni containing devices. The presence of deep defect levels in the absorber layer was identified with admittance spectroscopy and can be related to Ni and Cr impurities, which diffused into the CIGS layer according to secondary ion mass spectroscopy depth profiles and inductively coupled plasma mass spectrometry. Copyright © 2014 John Wiley & Sons, Ltd.     

Microfluidic chips for chirality exploration

Microfluidic chips applied to the investigation of chirality allow reaction, separation and analysis of minuscule amounts of enantiomeric molecules. Chiral chip technology is employed in fields as diverse as pharmaceutical high throughput screening and deep space exploration missions.