Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.     

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (R_s) to increase at large drain bias voltages. The increase in R_s can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (R_d) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of R_s should be considered. It is also found that a deep gate recess suppresses the increase in R_d after long-term stressing.     

Nonlinear control for rotational movement of cart-pendulum system using homoclinic orbit

In this paper, we deal with the control method for rotational movements of a pendulum using a separatrix. We design a controller that attains a homoclinic motion or a heteroclinic motion of the pendulum and the asymptotic stability of the cart by using a kind of forwarding control design. First, we derive a controller that converges to a homoclinic orbit via a Lyapunov function of the pendulum subsystem. Next, we give a nonlinear stabilizing controller via another Lyapunov function of the cart subsystem. Moreover, using the third Lyapunov function and adding a complementary control input, we guarantee that the pendulum converges to the homoclinic orbit and the cart is stabilized. Finally, the simulation and the experiment using the rapid controller prototyping system based on MATLAB/Simulink are performed to demonstrate the forward upward circling and the giant swing of the pendulum.     

Adaptive backstepping control of wheeled inverted pendulum with velocity estimator

In this paper, we introduce a backstepping control design of a wheeled inverted pendulum. Based on a second-order motion equation of the body angle, an adaptive integral backstepping controller is designed to stabilize the body angle. It is shown that the σ-modification rule in the adaptive update law guarantees the boundedness of the errors in estimating the time-varying signal that is an output of a linear system with every bounded input signal. Then, the stabilizing controller for the wheel angle is constructed by a PD-type positive feedback. The derived controller requires the full-state measurements. In the output feedback case, the K filter or the observer backstepping is needed. However, the structure of the controller becomes complicated. We propose a non-model-based differentiator based on the adaptive update law. Since the non-model-based differentiator does not require any knowledge of the dynamic structure of the signal, we can use it as a velocity estimator for unknown nonlinear systems. Therefore, we replaced the velocity measurement with the estimates by the non-model-based differentiator. Finally, simulation results for the proposed controller are presented.     

SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures

We proposed surface acoustic wave (SAW) filters composed of interdigital Schottky and ohmic contacts on AlGaN/GaN heterostructures. The contribution of the SAWs appeared in the radio frequency characteristics of the filters when the Schottky contacts were reverse biased. Onsets of the SAW signals and the threshold voltage of simultaneously fabricated high-electron mobility transistors were found to almost agree with one another. We also obtained an isolation of >40 dB. These results suggest that SAW-based functional devices are likely to be realized using AlGaN/GaN heterostructures with interdigital Schottky and ohmic contacts     

In-situ measurement of microwave absorption properties at 2.45 GHz for the polycondensation of lactic acid

For the construction of a microwave-assisted organic synthesis plant, it is necessary to know the dielectric properties of the reaction system. Measurements of the dielectric properties of lactic acid aqueous solution, anhydrated lactic acid, oligo(lactic acid) and water, which are constituent materials in the polycondensation of lactic acid, confirm that dielectric properties decrease as reaction progresses. Calculated microwave penetration depths, obtained from the dielectric properties, show that microwaves penetrate deeply into the reaction system. This work should be useful for the development of microwave-assisted organic syntheses in the chemical industry.     

An 0.03 μm gate-length enhancement-mode InAlAs/InGaAs/InPMODFET's with 300 GHz fT and 2 S/mm extrinsictransconductance

We have developed high-performance enhancement-mode InP-based modulation-doped field-effect transistors with 0.03 μm gate-length. A record high current gain cutoff frequency exceeding 300 GHz has been achieved, and the maximum extrinsic transconductance is as high as 2 S/mm with an associated drain current of 0.5 A/mm at a drain bias of 1 V. This high performance is a result of the reduction or gate length, the use of the high barrier metal Pt as gate electrodes, and most importantly the employment of the well-developed wet-etching technology that allows the formation of a very deep gate groove while retaining small side etching. The excellent E-MODFET performance opens up the possibility of implementing ever faster high-speed circuits based on direct-coupled FET logic     

In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films

Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.     

A 16-Mb Toggle MRAM With Burst Modes

This paper describes a recently developed 16-Mb toggle magnetic random access memory (MRAM). It has 100-MHz burst modes that are compatible with a pseudo-SRAM even though the toggle cell requires reading and comparing sequences in write modes. To accelerate operating clock frequency, we propose a distributed-driver wide-swing current-mirror scheme, an interleaved and pipelined memory-array group activation scheme, and a noise-insulation switch scheme. These circuit schemes compensate the toggle cell timing overhead in write modes and maintain write-current precision that is essential for the wide operational margin of MRAMs. Because toggle cells are very resistant to write disturbance errors, we designed the 16-Mb MRAM to include a toggle MRAM cell. The MRAM was fabricated with 0.13-mum CMOS and 0.24-mum MRAM processes with five metal layers.     

Intrathoracic vagal nerve schwannoma preoperative diagnosis is correct because of clinical and characteristic CT findings--a case report and review of the literature

BACKGROUND: Blister formation and tissue damage in bullous pemphigoid have been attributed to the release of eosinophil granule proteins--namely, to eosinophil derived cationic protein (ECP) and major basic protein (MBP). In the present investigation these eosinophil granule proteins were studied in the conjunctiva of patients with ocular cicatricial pemphigoid (OCP). METHODS: Conjunctival biopsy specimens obtained from patients with subacute (n = 8) or chronic conjunctival disease (n = 13) were analysed histologically and immunohistochemically using antibodies directed against EG1 (stored and secreted ECP), EG2 (secreted ECP), MBP, CD45 (common leucocyte antigen), CD3 (pan T cell marker), and HLA-DR (class II antigen). RESULTS: Subepithelial mononuclear cells, mast cells, and neutrophils were detected in all specimens. The number of mononuclear cells, neutrophils, CD45+ cells, CD3+ cells, and the HLA-DR expression were significantly higher in the subacute than in the chronic disease group. Some eosinophils were found in specimens from five of eight patients with subacute OCP, but in none of the patients with chronic disease. The eosinophil granule proteins (ECP and MBP) were found in the epithelium and substantia propria in patients with subacute conjunctivitis. CONCLUSIONS: Subepithelial cell infiltration in the conjunctiva greatly differs between subacute and chronic ocular cicatricial pemphigoid specimens. The findings suggest that eosinophil granule proteins may participate in tissue damage in acute phase of inflammation in OCP.