Dependence of critical current density on microstructure and processing of high-Tc superconductors

Microstructural origins for reduced weak-link behavior in high-J_c melt-processed YBCO, spray pyrolyzed thick films of Tl-1223, metallic precursor Y-124 polycrystalline powder-in-tube (PIT) wires and PIT Bi-2212/2223 are discussed. Since the materials studied are the highest J_c, polycrystalline, high-T_c superconductors fabricated worldwide, the results provide important guidelines for further improvements in superconducting properties, thereby enabling practical applications of these materials. It is found that strongly linked current flow within domains of melt-processed 123 occurs effectively through a single crystal path. In c-axis oriented, polycrystalline Tl-1223 thick films, local in-plane texture has been found to play a crucial role in the reduced weak-link behavior. Formation of “colonies” of grains with a common c-axis and modest in-plane misorientation was observed. Furthermore, a colony boundary in general has a varying misorientation along the boundary. Large regions comprised primarily of low angle boundaries were observed. Percolative transport through a network of such small angle boundaries appears to provide the nonweak-linked current path. Although powder-in-tube BSCCO 2212 and 2223 also appear to have a “colony” microstructure, there are some important differences. Colonies in BSCCO consist of stacks of grains with similar c-axis orientation in contrast to colonies in Tl-1223 films where few grains are stacked on top of one another. Furthermore, most grains within a colony in BSCCO have the same lateral dimensions as that of the colony, resulting largely largely in “twist” boundaries. Further microstructural characterization of high-J_c PIT 2212 and 2223 is currently underway. In the case of Y-124 wires, weak macroscopic in-plane texture is found. Additional measurements are underway to determine if a sharper, local in-plane texture also exists. It is found that in three of the four types of superconductors studied, reduced weak-link behavior can be ascribed to some degree of biaxial alignment between grains, either on a “local” or a “global” scale.     

Study of etch rate characteristics of SF6/He plasmas byresponse-surface methodology: effects of interelectrode spacing

The characteristics of SF₆/He plasmas which are used to etch Si₃N₄ have been examined with experimental design and modeled empirically by response-surface methodology using a Lam Research Autoetch 480 single-wafer system. The effects of variations of process gas flow rate (20-380 sccm), reactor pressure (300-900 mtorr). RF power (50-450 W at 13.56 MHz), and interelectrode spacing (8-25 mm) on the etch rates of LPCVD (low-pressure chemical vapor deposition) Si₃N₄, thermal SiO₂, and photoresist were examined at 22±2°C. Whereas the etch rate of photoresist increases with interelectrode spacing between 8 and 19 mm and then declines between 19 and 25 mm, the etch rate of Si₃N ₄ increases smoothly from 8 to 25 mm, while the etch rate of thermal SiO₂ shows no dependence on spacing between 8 and 25 mm. The etch rates of all three films decrease with increasing reactor pressure. Contour plots of the response surfaces for etch rate and etch uniformity of Si₃N₄ as a function of spacing and flow rate at constant RF power (250 W) display complex behavior at fixed reactor pressures. A satisfactory balance of etch rate and etch uniformity for Si₃N₄ is predicted at low reactor pressure (~300 mtorr), large electrode spacing (12-25 mm), and moderate process gas flow rates (20-250 sccm)