A Broadband Dual Circularly Polarized Compact Printed Monopole Antenna

Wireless Personal Communications - Now-a-days the most common pretentious disease is the lung cancer, which has become more prevalent in the world that primarily infects the pulmonary nodules of...     

Nutritional components as mitigators of cellular senescence in organismal aging: a comprehensive review

Food Science and Biotechnology - The process of cellular senescence is rapidly emerging as a modulator of organismal aging and disease. Targeting the development and removal of senescent cells is...     

Effect of 100 KeV Ar+ ion beam irradiation on ZnO thin films – Influence of morphology vis-a-vis electrode/electrolyte interface and its impact on photoelectrochemical water splitting

The present study attempts quantitative determination of changes in the morphological surface features viz. fractal dimension, lower and upper cut off length scale through Power Spectral Density analysis prior to and after irradiation of 100 KeV Ar⁺ ion beam at incidence angles of 0°, 40° and 60° on ZnO thin films. All the unirradiated and irradiated samples are subjected to photoelectrochemical characterization and a correlation between photoelectrochemical performance and morphological parameters is established. Sample irradiated at 40° angle at the fluence of 5 × 10¹⁶ ions/cm² is found to possess maximum fractal dimension of 2.72, lower and upper cut off length scale of 3.16 nm and 63.00 nm respectively. This sample exhibits maximum photocurrent density of 3.19 mA/cm² and applied bias photon-to-current efficiency of 1.12% at 1.23 V/RHE. Hydrogen gas collected for duration of 1 h for the same sample was ~4.83 mLcm^?2.     

Effects of DEM Source,Spatial Resolution and Drainage Area Threshold Values on Hydrological Modeling

Water Resources Management - Automated computation of hydrological and morphometric parameters of any watershed are not only depended on Digital Elevation Model (DEM) resolution but also affected...     

Fuzzy Multiobjective and Linear Programming Based Management Models for Optimal Land-Water-Crop System Planning

In this article, linear programming and fuzzy optimization models are developed for planning and management of available land-water-crop system of Mahanadi-Kathajodi delta in eastern India. The models are used to optimize the economic return, production and labour utilization, and to search the related cropping patterns and intensities with specified land, water, fertilizer and labour availability, and water use pattern constraints. Due to extreme backwardness of the study area, it has been decided to keep all the three objectives of the linear programming models at the same priority level to obtain the compromised solution in a fuzzy environment that incorporates the imprecision in fuzzy goals and fuzzy constraints. These non-structural models facilitate the conjunctive use of available surface water and groundwater resources. A comparative evaluation along with the benefit-cost ratios of the existing and proposed farming systems is also presented.     

Azomesogens with 1,2,4-trisubstituted benzene moiety

New mesogenic homologous series having an azo central linkage was synthesized by fixing a rigid 4-methyl phenyl azo group to resorcinol moiety. The terminal and lateral phenolic -OH groups were esterified, one by one, with 4-n-alkoxybenzoyl and acetyl group, respectively. All the twelve homologues synthesized exhibit mesomorphism. The methoxy ton-decyloxy andn-hexadecyloxy derivatives exhibit monotropic nematic mesophase whereas,n-dodecyloxy andn-tetradecyloxy derivatives exhibit enantiotropic nematic mesophase. The mesogenic properties of the present series was compared with those of other structurally related mesogenic series. Paper presented at the 5th National Seminar on Liquid Crystals, University of Jammu, Jammu, December 1997.     

In vivo purging with high-dose cytarabine followed by high-dose chemoradiotherapy and reinfusion of unpurged bone marrow for adult acute myelogenous leukemia in first complete remission

PURPOSE: To evaluate in a prospective study the efficacy of autologous bone marrow transplantation (BMT) in adult patients with acute myelogenous leukemia (AML) in first remission, using a single course of high-dose Cytarabine (HD Ara-C) consolidation therapy as in vivo purging. PATIENTS AND METHODS: Sixty consecutive adult patients with AML in first complete remission (CR) were treated with HD Ara-C consolidation therapy as a method of in vivo purging before marrow collection. High-dose therapy consisted of fractionated total-body irradiation (FTBI) 12 Gy, intravenous etoposide 60 mg/kg, and cyclophosphamide 75 mg/kg, followed by reinfusion of cryopreserved marrow. RESULTS: Sixty patients underwent consolidation treatment with HD Ara-C with the intent to treat with autologous BMT. Sixteen patients were unable to proceed to autologous BMT (10 patients relapsed, one died of sepsis, one developed cerebellar toxicity, two had inadequate blood counts, and two refused). Forty-four patients underwent autologous BMT and have a median follow-up time of 37 months (range, 14.7 to 68.7) for patients who are alive with no relapse. The cumulative probability of disease-free survival (DFS) at 24 months in the intent-to-treat group is 49% (95% confidence interval [CI], 37% to 62%) and in those who actually underwent autologous BMT is 61% (95% CI, 46% to 74%). The probability of relapse was 44% (95% CI, 31% to 58%) and 33% (95% CI, 20% to 49%) for the intent-to-treat and autologous BMT patients, respectively. CONCLUSION: This approach offers a relatively high DFS rate to adult patients with AML in first CR. The results of this study are similar to those achieved with allogeneic BMT.     

Electroless Plating of Copper on Fluorinated Polyimide Films Modified by Plasma Graft Copolymerization and UV‐induced Graft Copolymerization with 4‐Vinylpyridine

Surface modification of two types of fluorinated polyimide (FPI) films, either by plasma polymerization and deposition of 4‐vinylpyridine (4VP) or by UV‐induced graft copolymerization with 4VP under atmospheric conditions, was carried out for adhesion enhancement with the electrolessly deposited copper. X‐ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) results revealed that the pyridine groups in the plasma polymerized 4VP (pp‐4VP) layer could be preserved to a large extent under proper glow discharge conditions. The grafted 4VP layer with well‐preserved pyridine groups was used not only as the chemisorption sites for the palladium complexes (without the need for prior sensitization by SnCl₂) during the electroless plating of copper, but also as an adhesion promotion layer for the electrolessly deposited copper. The T‐peel adhesion strength of the electrolessly deposited copper with both the 4VP plasma‐polymerized FPI (pp‐4VP‐FPI) film and the 4VP graft‐copolymerized FPI (4VP‐g‐FPI) film was much higher than that of the electrolessly deposited copper with the pristine or the Ar plasma‐treated FPI films. The high adhesion strength between the electrolessly deposited copper and the surface‐modified FPI film was attributed to the fact that the plasma‐polymerized and the UV graft‐copolymerized 4VP chains were covalently tethered on the FPI surfaces, as well as the fact that these grafted 4VP polymer chains were spatially and reactively distributed into the copper matrix.

     

Effect of AlN addition on the electrical resistivity of pressureless sintered SiC ceramics with B4C and C

The effect of 0–12 wt% AlN addition on the electrical resistivity of SiC ceramics pressureless sintered with 0.7 wt% B₄C and 2.5 wt% C additives was investigated. The elemental analysis of SiC grains revealed a codoping of Al and N in the SiC lattice with a higher N concentration with 1 wt% AlN addition and a higher Al concentration with 12 wt% AlN addition. The electrical resistivity decreased by four orders of magnitude (1.7 × 10⁵ → 8.3 × 10¹ Ω cm) with 1 wt% AlN addition due to the increased carrier density (1.7 × 10¹⁰ → 2.3 × 10¹⁵ cm⁻³) caused by excess N-derived donors. However, subsequent AlN addition (4 → 12 wt%) led to an increase (2.9 × 10³ → 1.2 × 10⁴ Ω‧cm) in electrical resistivity due to (1) increased Al dopants which act as deep acceptors for trapping N-derived carriers causing a decrease in carrier density (2.3 × 10¹⁵ → 5.9 × 10¹³ cm⁻³), (2) the formation of electrically insulating SiC-AlN solid solution, and (3) the presence of electrically insulating AlN grains at the grain boundaries.