Recovery of fluorocarbons in Japan as a measure for abating global warming

The objective of this study is to evaluate the potential for recovering fluorocarbons as measures for the abatement of global warming. In this study, we focused on the three different kinds of fluorocarbons: CFCs, HCFCs and HFCs, and targeted refrigerant use because of the availability of relevant data. We first estimated future fluorocarbon emissions from the targeted appliances; we next compared those emissions in the units of CO₂ equivalent to the level of CO₂ emissions in 1990 from a quantitative point of view. As the result of this study, it was found that fluorocarbon emissions in 1999 and 2010 would be equal to approximately 7 and 3% of the level of CO₂ emissions in 1990 respectively. Moreover, if we implement a 100% recovery rate in every recovery route, we can reduce a large amount of emissions which correspond to approximately 2–5% of the level of CO₂ emissions in 1990, even if we take into account the energy-related CO₂ emissions by the transportation and decomposition of fluorocarbons.     

A Novel UWB Pulse Shape Modulation System

In this paper novel modified Hermite polynomial functions for use in impulse radio (ultra-wideband) communications are proposed. With these functions pulse shapes which are orthogonal and have nearly constant pulse width regardless of the pulse order are generated. These properties hold under the effects of differentiation. An M-ary communication system is constructed using these pulse shapes. A Matlab model for generating the pulses is designed and the effect of timing jitter on the performance of the system is investigated by computer simulation.     

A high resolution negative working resist,LMR-UV,for g- and i-line lithography

LMR-UV (“low molecular weight resist for uv lithography”), a naphthoquinone-diazide sulfonic acid ester of a novolak resin, is a negative working resist. The mechanism of insolubilization of LMR-UV is based on the facts that the naphthoquinone-diazide moiety is decomposed to indenecarboxylic acid (polar compound) by photolysis upon UV irradiation and that the irradiated resist film insolubilizes in a non-polar developer. LMR-UV reliably forms 0.6 μm lines and spaces over a reflective substrate with steps by using a g-line stepper having a 0.35 NA lens. 0.6 μm-wide aluminum patterns over topography are obtained by use of g-line exposure and reactive ion etching. By use of an i-line aligner (NA = 0.42), LMR-UV resolves 0.25 μm space patterns with overhang profiles. The profiles are due to the large absorption coefficient of 3.8 μm^?1. 0.3 μm wide aluminum patterns are formed by i-line exposure and lift-off metallization.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

Synthesis of High-Purity Zirconium Fluoride for Fluoride Glass Fibers by Chemical Vapor Deposition

A technique for synthesizing ultra-high-purity ZrF₄ using chemical vapor deposition in a ZrBr₄–HF system is developed and a purification mechanism is clarified. The Fe concentration in ZrF₄ is evaluated at less than 10 ppb based on analysis of the transmission loss spectrum of a fiber prepared using synthesized ZrF₄. Purification is achieved mainly in a sublimation process of ZrBr₄, and purification efficiency is determined by sublimation temperature and activity of impurities in ZrBr₄. The concentration of transition-metal impurities in ZrF₄, synthesized by chemical vapor deposition in the ZrBr₄–HF system, is expected to be less than 1 ppb.     

Preparation of Aluminum Nitride–Silicon Carbide Nanocomposite Powder by the Nitridation of Aluminum Silicon Carbide

Aluminum nitride (AlN)–silicon carbide (SiC) nanocomposite powders were prepared by the nitridation of aluminum-silicon carbide (Al₄SiC₄) with the specific surface area of 15.5 m²·g⁻¹. The powders nitrided at and above 1400°C for 3 h contained the 2H-phases which consisted of AlN-rich and SiC-rich phases. The formation of homogeneous solid solution proceeded with increasing nitridation temperature from 1400° up to 1500°C. The specific surface area of the AlN–SiC powder nitrided at 1500°C for 3 h was 19.5 m²·g⁻¹, whereas the primary particle size (assuming spherical particles) was estimated to be ∼100 nm.     

Formation of Tetravalent Fe Ions in LaFeO3 Perovskite Through Mechanochemical Modification by Ball Milling

Mechanochemical modification of previously synthesized LaFeO₃ perovskite‐type oxide by a high‐energy ball milling was investigated to introduce Fe⁴⁺ ions or transform some Fe³⁺ into Fe⁴⁺ in LaFeO₃. X‐ray absorption fine structure studies revealed that the formation of Fe⁴⁺ ions into LaFeO₃ perovskite has been achieved at first time by ball milling at room temperature without any additives or replacement of La³⁺ ions by some divalent cations. The structural model of Fe⁴⁺ containing LaFeO₃ could be described as with a modified perovskite having equal amounts of La and Fe vacancies, which is supported by a good correlation between the results of Fe K‐edge XANES spectra and O₂‐TPD. The synthesis of Fe⁴⁺‐containing LaFeO₃ perovskite by ball milling was able to produce the O₂ adsorption capacity of nonsubstituted perovskite‐type oxide.     

Detection of light-absorbing iron oxide particles using a modified single-particle soot photometer

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