Formation of low-resistivity poly-Si and SiNx films by Cat-CVD for ULSI application

In this paper, bulk-Si metal–oxide–semiconductor field effect transistors (MOSFETs) are fabricated using the catalytic chemical vapor deposition (Cat-CVD) method as an alternative technology to the conventional high-temperature thermal chemical vapor deposition. Particularly, formation of low-resistivity phosphorus (P)-doped poly-Si films is attempted by using Cat-CVD-deposited amorphous silicon (a-Si) films and successive rapid thermal annealing (RTA) of them. Even after RTA processes, neither peeling nor bubbling are observed, since hydrogen contents in Cat-CVD a-Si films can be as low as 1.1%. Both the crystallization and low resistivity of 0.004 Ω·cm are realized by RTA at 1000 °C for only 5 s. It is also revealed that Cat-CVD SiN_x films prepared at 250 °C show excellent oxidation resistance, when the thickness of films is larger than approximately 10 nm for wet O₂ oxidation at 1100 °C. It is found that the thickness required to stop oxygen penetration is equivalent to that for thermal CVD SiN_x prepared at 750 °C. Finally, complementary MOSFETs (CMOSs) of single-crystalline Si were fabricated by using Cat-CVD poly-Si for gate electrodes and SiN_x films for masks of local oxidation of silicon (LOCOS). At 3.3 V operation, less than 1.0 pA μm⁻¹ of OFF leakage current and ON/OFF ratio of 10⁷–10⁸ are realized, i.e. the devices can operate similarly to conventional thermal CVD process.     

Identification of Tumor Suppressive Genes Regulated by miR-31-5p and miR-31-3p in Head and Neck Squamous Cell Carcinoma

We identified the microRNA (miRNA) expression signature of head and neck squamous cell carcinoma (HNSCC) tissues by RNA sequencing, in which 168 miRNAs were significantly upregulated, including both strands of the miR-31 duplex (miR-31-5p and miR-31-3p). The aims of this study were to identify networks of tumor suppressor genes regulated by miR-31-5p and miR-31-3p in HNSCC cells. Our functional assays showed that inhibition of miR-31-5p and miR-31-3p attenuated cancer cell malignant phenotypes (cell proliferation, migration, and invasion), suggesting that they had oncogenic potential in HNSCC cells. Our in silico analysis revealed 146 genes regulated by miR-31 in HNSCC cells. Among these targets, the low expression of seven genes (miR-31-5p targets: CACNB2 and IL34; miR-31-3p targets: CGNL1, CNTN3, GAS7, HOPX, and PBX1) was closely associated with poor prognosis in HNSCC. According to multivariate Cox regression analyses, the expression levels of five of those genes (CACNB2: p = 0.0189; IL34: p = 0.0425; CGNL1: p = 0.0014; CNTN3: p = 0.0304; and GAS7: p = 0.0412) were independent prognostic factors in patients with HNSCC. Our miRNA signature and miRNA-based approach will provide new insights into the molecular pathogenesis of HNSCC.     

Comparison of coal hydroliquefaction catalysed by ZnCl2-MCln (CuCl,CrCl3 and MoCl5) and ZnCl2 melts

Hydrogenation of four bituminous coals impregnated with 5 wt% of either mixtures of ZnCl₂-MCl_n (CuCl, CrCl₃ and MoCl₅) systems or ZnCl₂ was carried out using a batch autoclave system at 400° for 3 h at 9.8 MPa of initial hydrogen pressure. The ZnCl₂-MoCl₅ system showed the highest yield of the hexane-soluble (HS) fraction compared with the other systems irrespective of the coal used. The difference between the yields of HS fractions using the ZnCl₂-MoCl₅ and other systems was most marked for coals of fairly low volatile matter content, though the conversion was relatively low (47–66%), whilst for coals of high volatile matter content HS yields with the binary melt systems were high (86–91% conversion). Elemental analyses of the HS fractions indicated that the ZnCl₂-MoCl₅ system is most favourable in decreasing the average molecular weight and the heteroatom content of HS, this characteristic trend being confirmed also with five HS fractions separated by Chromatographic techniques. Both elemental analyses and molecular weights of asphaltene (benzene-soluble materials, BS) indicated that the ZnCl₂-MoCl₅ system is also most effective in cracking coal structure.     

Revolving Vernier Mechanism Controls Size of Linear Homomultimer

A new kind of the Vernier mechanism that is able to control the size of linear assembly of DNA origami nanostructures is proposed. The mechanism is realized by mechanical design of DNA origami, which consists of a hollow cylinder and a rotatable shaft in it connected through the same scaffold. This nanostructure stacks with each other by the shape complementarity at its top and bottom surfaces of the cylinder, while the number of stacking is limited by twisting angle of the shaft. Experiments have shown that the size distribution of multimeric assembly of the origami depends on the twisting angle of the shaft; the average lengths of the multimer are decamer, hexamer, and tetramer for 0°, 10°, and 20° twist, respectively. In summary, it is possible to affect the number of polymerization by adjusting the precise shape and movability of a molecular structure.     

Colored amorphous silica-based powder with TiN nanocrystals precipitated by ammonolysis of Ti–Si–O ternary glass

Coloration of amorphous silica powder containing titania was investigated by nitridation in an ammonia flow. The oxide precursors were obtained by the hydrolysis of a mixture of tetraethyl orthosilicate (TEOS) and tetrabutoxy titanium (TBT). The color changed with the amount of TBT in the mixture, the hydrolysis pH and the ammonolysis temperature. The original white color of the 8 mol% TBT powder hydrolyzed under basic pH conditions changed to pale goldenrod at 700°C, then to dark olive green at 800°C, and further darkened with increasing ammonolysis temperature. A steel-blue color appeared at 900°C for the powder obtained with 3 mol% TBT, and increased in darkness at 1000°C. A similar bluish color was observed for powders obtained by acidic hydrolysis after ammonolysis above 900°C, and this was independent of the amount of titania, although the chroma decreased with increasing firing temperature for the powder with 3 mol% TBT. The ammonolysis powder products were characterized using X-ray diffraction (XRD), electron probe micro analysis (EPMA), transmission electron microscopy-electron energy-loss spectroscopy (TEM-EELS), scanning transmission electron microscopy-high-angle annular dark-field imaging (STEM-HAADF) and Ti–K edge X-ray absorption fine structure (XAFS). The color change was related to both precipitated TiN nanocrystals and residual titanium in the amorphous silica matrix. The TiN exhibited a goldish reflection and also plasmonic absorption from light blue to gray depending on the TiN crystallite size. The plasmonic absorption and resonance of nanocrystalline TiN will be useful similarly to that of gold in nanotechnology for various kinds of energy application.     

Wide Color Variation in SiNO Thin Films Dispersed with Precipitated TiN Nano Particles

Amorphous thin films of Ti_1?ySi_y(N,O) with y ≥ 0.38 were prepared by reactive sputter deposition in a nitrogen atmosphere. Thermal annealing of the films in an ammonia flow above 800°C yielded Si(N,O) amorphous thin films dispersed with precipitated TiN nanosized particles. The film color changed with Si content y and the annealing conditions, from carrot orange to cream yellow in the as‐deposited films due to their oxynitride nature, and from dark green to canary yellow and from iron blue to horizon blue at respective annealing temperatures of 800°C and 900°C due to metallic nature of the TiN nanosized particles precipitated in the annealing.     

Additive Sintering,Postannealing, and Dielectric Properties of SrTaO2N

The maintaining of the chemical composition and electrical insulativity of SrTaO₂N ceramics was investigated during sintering and annealing, using powders prepared by the nitridation of Sr₂Ta₂O₇. Due to the low thermal stability of SrTaO₂N, the partial loss of SrO and nitrogen induced the formation of a TaO_0.9 impurity after heat‐treating at above 1100°C. The sintering additive SrCO₃ and postannealing in NH₃ were employed to compensate for the loss of SrO and nitrogen to obtain ceramics with the original chemical composition. The as‐sintered SrTaO₂N ceramics with various relative density (RD) were annealed in NH₃ to observe the recovery of color and electrical insulativity. It was found that the inner part of the well‐sintered samples with RD = 95.1% could not be recovered by annealing, and continued to exhibit semiconducting behavior and a black color. On the other hand, for the as‐sintered SrTaO₂N ceramics with RD < 84%, both the nitrogen content and electrically insulating behavior were completely recovered after annealing. The postannealed SrTaO₂N ceramics (RD = 83.3%) possessed a relatively large dielectric constant of 450 with a low dielectric loss of less than 0.1 at 100 Hz, almost independent of frequency and temperature.     

A new cobalt salicide technology for 0.15-μm CMOS devices

A new cobalt (Co) salicide technology for sub-quarter micron CMOS transistors has been developed using high-temperature sputtering and in situ vacuum annealing. Sheet resistance of 11 Ω/□ for both gate electrode and diffusion layer was obtained with 5-nm-thick Co film. No line width dependence of sheet resistance was observed down to 0.15-μm-wide gate electrode and 0.33-μm-wide diffusion layer. The high temperature sputtering process led to the growth of epitaxial CoSi ₂ layers with high thermal stability. By using this technology 0.15 μm CMOS devices which have shallow junctions were successfully fabricated