A genetic‐based neuro‐fuzzy controller for blind equalization of time‐varying channels

This paper presents a neuro‐fuzzy network (NFN) where all its parameters can be tuned simultaneously using genetic algorithms (GAs). The approach combines the merits of fuzzy logic theory, neural networks and GAs. The proposed NFN does not require a priori knowledge about the system and eliminates the need for complicated design steps such as manual tuning of input–output membership functions, and selection of fuzzy rule base. Although, only conventional GAs have been used, convergence results are very encouraging. A well‐known numerical example derived from literature is used to evaluate and compare the performance of the network with other equalizing approaches. Simulation results show that the proposed neuro‐fuzzy controller, all parameters of which have been tuned simultaneously using GAs, offers advantages over existing equalizers and has improved performance. From the perspective of application and implementation, this paper is very interesting as it provides a new method for performing blind equalization. The main contribution of this paper is the use of learning algorithms to train a feed‐forward neural network for M‐ary QAM and PSK signals. This paper also provides a platform for researchers of the area for further development. Copyright © 2008 John Wiley & Sons, Ltd.     

Electrical properties of N2O/NH3 plasma grownoxynitride on strained-Si

Growth of ultrathin (<100 Å) oxynitride on strained-Si using microwave N₂O and NH₃ plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO₂ interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1×10¹⁰ cm^-2) has been obtained for NH₃ plasma treated N₂O oxide sample. Nitrided oxide shows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress     

Design of a Variable Depth Axially Corrugated Horn Antenna at X-Band for Low Cross-Polarization Applications

Wireless Personal Communications - This paper presents a study of a class of iris localization algorithms in the presence of blurring. The effect of blurring is a serious problem in most image...     

Electrical properties of SiO2/TiO2 high-k gate dielectric stack

The trapping/detrapping behavior of charge carriers in ultrathin SiO₂/TiO₂ stacked gate dielectric during constant current (CCS) and voltage stressing (CVS) has been investigated. Titanium tetrakis iso-propoxides (TTIP) was used as the organometallic source for the deposition of ultra-thin TiO₂ films at low temperature (<200 °C) on strained-Si/relaxed-Si_0.8Ge_0.2 heterolayers by plasma-enhanced chemical vapor deposition (PECVD) in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of 66.67 Pa. Stress-induced leakage current (SILC) through SiO₂/TiO₂ stacked gate dielectric is modeled by taking into account the inelastic trap-assisted tunneling (ITAT) mechanism via traps located below the conduction band of TiO₂ layer. The increase in the gate current density observed during CVS from room temperature up to 125 ^oC has been analyzed and modeled considering both the buildup of charges in the layer as well as the SILC contribution. Trap generation rate and trap cross-section are extracted. A capture cross-section in the range of 10⁻¹⁹ cm² as compared to 10⁻¹⁶ cm² in SiO₂ has been observed. A temperature-dependent trap generation rate and defects have also been investigated using time-dependent current density variation during CVS. The time dependence of defect density variation is calculated within the dispersive transport model, assuming that these defects are produced during random hopping transport of positively charge species in the insulating high-k stacked layers. SILC generation kinetics, i.e. defect generation probability under different injected fluences for various high-constant stress voltages in both polarities have been studied. An empirical relation between trap generation probability and applied stress voltage for various injected fluences has been developed.     

High-performance fully depleted silicon nanowire (diameter /spl les/ 5 nm) gate-all-around CMOS devices

This paper demonstrates gate-all-around (GAA) n- and p-FETs on a silicon-on-insulator with /spl les/ 5-nm-diameter laterally formed Si nanowire channel. Alternating phase shift mask lithography and self-limiting oxidation techniques were utilized to form 140- to 1000-nm-long nanowires, followed by FET fabrication. The devices exhibit excellent electrostatic control, e.g., near ideal subthreshold slope (/spl sim/ 63 mV/dec), low drain-induced barrier lowering (/spl sim/ 10 mV/V), and with I/sub ON//I/sub OFF/ ratio of /spl sim/10/sup 6/. High drive currents of /spl sim/ 1.5 and /spl sim/1.0 mA//spl mu/m were achieved for 180-nm-long nand p-FETs, respectively. It is verified that the threshold voltage of GAA FETs is independent of substrate bias due to the complete electrostatic shielding of the channel body.     

Studies on dielectric relaxation and defect generation for reliability assessments in ultrathin high-k gate dielectrics on Ge

In this work, we present the results of dielectric relaxation and defect generation kinetics towards reliability assessments for Zr-based high-k gate dielectrics on p-Ge (1 0 0). Zirconium tetratert butoxide (ZTB) was used as an organometallic source for the deposition of ultra thin (∼14 nm) ZrO₂ films on p-Ge (1 0 0) substrates. It is observed that the presence of an ultra thin lossy GeO_x interfacial layer between the deposited high-k film and the substrate, results in frequency dependent capacitance-voltage (C-V) characteristics and a high interface state density (∼10¹² cm⁻² eV⁻¹). Use of nitrogen engineering to convert the lossy GeO_x interfacial layer to its oxynitride is found to improve the electrical properties. Magnetic resonance studies have been performed to study the chemical nature of electrically active defects responsible for trapping and reliability concerns in high-k/Ge systems. The effect of transient response and dielectric relaxation in nitridation processes has been investigated under high voltage pulse stressing. The stress-induced trap charge density and its spatial distribution are reported. Charge trapping/detrapping of stacked layers under dynamic current stresses was studied under different fluences (−10 mA cm⁻² to −50 mA cm⁻²). Charge trapping characteristics of MIS structures (Al/ZrO₂/GeO_x/Ge and Al/ZrO₂/GeO_xN_y/Ge) have been investigated by applying pulsed unipolar (peak value - 10 V) stress having 50% duty-cycle square voltage wave (1 Hz-10 kHz) to the gate electrode.     

Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field

The growth of a high quality, step-graded lattice-relaxed SiGe buffer layer on a Si(100) substrate is investigated. p-MOSFETs were fabricated on strained-Si grown on top of the above layer. Carrier confinement at the type-II strained-Si/SiGe buffer interface is observed clearly from the device transconductance and C-V measurements. At high vertical field, compared to bulk silicon, the channel mobility of the strained-Si device with x=0.18 is found to be about 40% and 200% higher at 300 K and 77 K respectively. Measurements on transconductance enhancement are also reported. Data at 77 K provide evidence of two channels and a large enhancement of mobility at high transverse field.     

Formulae for determining heterodyne system spurious frequencies that coincide with desired output frequency

In this paper, formulae to determine the lowest order and other higher order spurious frequencies that coincide with desired output signal frequencies of mixers have been derived. The proposed formulae give general expressions that are suitable for any order of heterodyne mixing. The formulae have been verified using a suitable example and compared with the simulation results obtained through the radio frequency simulation software of Advanced Design System. The formulae directly reveal the order of the troublesome spurious frequencies that the designers would encounter in heterodyne systems. In comparison with these direct formulae, the results of existing spurious analysis software are based on the maximum order of simulation carried out. Based on these simulations, the coinciding spurious components have to be manually sorted out. Proposed formulae are quick tools used by the microwave system and circuit designers for choosing and finalizing heterodyne frequencies in their designs without the need for any simulations.     

Text extraction and document image segmentation using matched wavelets and MRF model.

In this paper, we have proposed a novel scheme for the extraction of textual areas of an image using globally matched wavelet filters. A clustering-based technique has been devised for estim ating globally matched wavelet filters using a collection of groundtruth images. We have extended our text extraction scheme for the segmentation of document images into text, background, and picture components (which include graphics and continuous tone images). Multiple, two-class Fisher classifiers have been used for this purpose. We also exploit contextual information by using a Markov random field formulation-based pixel labeling scheme for refinement of the segmentation results. Experimental results have established effectiveness of our approach.