High-power 980-nm AlGaAs/InGaAs strained quantum-well laser grown by OMVPE

High-power lattice-strained AlGaAs/InGaAs graded index separate-confinement heterostructure (GRINSCH) quantum-well lasers emitting at a 980-nm wavelength have been grown by organometallic vapor phase epitaxy (OMVPE) and fabricated with a self-aligned ridge-waveguide structure. Using a 3- mu m-wide and 750- mu m-long AR-HR coated laser, 30 mV of optical power was coupled into optical fibers with 28.6% efficiency. A dominating single-lobe far-field radiation pattern was obtained from a wedge-shaped ridge-waveguide laser for output power as high as 240 mW with a maximum output power of 310 mW.<>     

Gain characteristics of 1.55-μm high-speed multiple-quantum-welllasers

We describe the important characteristics of high-speed p-doped compressively strained MQW lasers obtained from comprehensive below-threshold DC measurements. Results of gain and differential gain versus wavelength and carrier density are verified by above-threshold resonance measurements. Measurement-derived design curves of gain, differential gain, and linewidth enhancement factor allow device optimization for high speed and low chirp     

A novel SAL-PINSCH quantum-well laser structure for a pinched beamdivergence

Summary form only given. An edge-emitting strained AlGaAs/InGaAs/GaAs quantum-well laser structure is reported. It has a periodic index separate confinement heterostructure (PINSCH) optical confinement layers for a small beam divergence and high output power. Preliminary measurements of AR/HR-coated self-aligned ridge waveguide lasers show a CW output power of up to 350 mW and a 20° transverse beam divergence at a 980-nm lasing wavelength. This low beam divergence results in a high coupling efficiency of 51% into single-mode fibers. The expanded optical field in PINSCH confinement layers significantly pinches the transverse beam divergence and increases the maximum output power     

Methodological approaches for histamine quantification using derivatization by chloroethylnitrosourea and ELISA measurement. Part II: Optimisation of the derivatization step

In a previous paper (part I), new strategy was used for raising antibodies against hapten (< 300 Da) and the quantification of these hapten by ELISA using derivatization by chloroethyl nitrosourea (CENU). After raising antibodies against histamine, they were characterized and used for ELISA measurements. Optimal detection conditions were determined for the histamine quantification by ELISA method. The present study investigates the derivatization step of the histamine by chloroethylnitrosourea (CENU). Five factors (2 qualitative: nature of the solvent and nature of the antibodies and 3 quantitative: pH, % of solvent and time of derivatization) have been considered. Optimal reaction conditions were established by calculation of a validated model.     

Sintering of α-alumina for highly transparent ceramic applications

In this paper we present our results on the sintering of α alumina ceramics by hot isostatic pressing. It describes a simple method for obtaining precise relative density values on our almost 100% dense samples. Then, transparency results are discussed with respect to grain size and residual porosity measurements, comparing them to scattering calculations. Our results are not far from the best reported transmission values: almost 60% for a 1 mm thick sample. The other 40% diffuse light comes from the birefringence of alumina for the most part. However, they are transparent enough to see detailed structures at several kilometers through them.     

Frequency response subtraction for simple measurement of intrinsiclaser dynamic properties

The authors describe a new technique for extracting the intrinsic laser-diode dynamic properties accurately. This simple technique eliminates the need for accurate microwave calibration of the test equipment and problems of microwave reflections, nonideal frequency response of laser mount, and detector. The effect of the parasitic components of the laser diode are also eliminated from the results so that measurements of important dynamic properties of the laser can be found up to high frequencies (10-20 GHz) on standard laser diodes. The techinque being used to measure variations of resonance peak and damping factor at different bias levels for a standard bulk active region 1.3 μm laser diode is shown     

Nanocrystalline Metal Oxides from the Injection of Metal Oxide Sols in Coordinating Solutions: Synthesis,Characterization, Thermal Stabilization,Device Processing,and Gas‐Sensing Properties

Metal oxide (SnO₂, TiO₂, In₂O₃, ZnO) sols are prepared by various sol–gel processes in such a way as to hinder the condensation reactions. The obtained sols are injected at 160 °C into a solution of tetradecene and dodecylamine, and kept under heating for different periods of time. Depending on the starting sol, variously crystallized oxide nanoparticles are obtained, whose phase compositions and chemical structure have been studied by X‐ray diffraction (XRD) and Fourier transform IR spectroscopy. The elimination of the organic residuals has been carried out by thermal treatment, and the thermal evolution of the nanoparticles has been studied by thermal analyses and Raman spectroscopy. High‐resolution transmission electron microscopy studies coupled with XRD measurements show that the thermal treatment does not markedly affect the particle size, which remains in the nanometer‐sized regime (from 3.5 to 8.5 nm, depending on the system), except in the case of ZnO. The thermally purified and stabilized powders, drop‐coated onto alumina substrates with pre‐deposited electrical contacts, have been tested as gas‐sensing devices, displaying outstanding sensing properties even at room temperature.     

Nouveau type structural dans la chimie des phosphures : Le compose ternaire Ni20Zr6P13. Preparation,structure et proprietes

Two new compounds Ni₁₂Zr₂P₇ and Ni₂₀Zr₆P₁₃ were synthesized in the NiZrP system by reacting the constituent elements. Ni₁₂Zr₂P₇ is of the Fe₁₂Zr₂P₇-type while Ni₂₀Zr₆P₁₃ appears as a new structural type in the chemistry of transition metal phosphides. Its unit cell is hexagonal with space group P6&#x0304; and contains one formula unit. The X-ray structure was studied from three-dimensional single-crystal counter data and was refined down to R = 0.040 for 221 independent reflections. The structure of Ni₂₀Zr₆P₁₃ can be described as built up by two groups of three phosphorus trigonal prisms occupied by the zirconium atoms. In each group, the |ZrP₆| prisms are linked together by common edges in order to generate triangular phosphorus sites occupied by nickel atoms. In addition, nickel atoms are also in tetrahedral and square-planar pyramidal phosphorus sites. A comparative study with the Fe₂P- and Co₄Hf₂P₃-type structures having the same metal/non metal ratio as in Ni₁₂Zr₂P₇ and Ni₂₀Zr₆P₁₃ is also discussed. A nearly temperature independent paramagetism and a metallic conduction deducted from magnetic and electrical measurements exhibit the metallic behavior for these new compounds.     

High temperature operation of lattice matched and strained InGaAs-InP quantum well lasers

The temperature dependence of lattice matched and strained InGaAs-InP quantum well lasers operating between 1.48 and 1.56 mu m is described. Devices grown under tensile and compressive strain, with an In concentration in the range of 0.43>