On the Growth of Thin-Film AlGaN/GaN Epitaxial Heterostructures on Hybrid Substrates Containing Layers of Silicon Carbide and Porous Silicon

Semiconductors - Abstract—In our work, we carry out a structural-spectroscopic study of AlGaN/GaN epitaxial layers grown by molecular-beam epitaxy with nitrogen-plasma activation on a hybrid...     

Phase formation,structure and properties of light-weight aluminosilicate proppants based on clay-diabase and clay-granite binary mixes

One of the drawbacks of fusible clays is the narrow sintering interval due to a sharp increase in the amount of iron-silicate melt at a temperature of 1000–1100 °C, which hardens in the form of a glass phase upon cooling. This leads to a relatively low mechanical strength of the calcined samples and causes the danger of melting the granular material surface from such clays during the firing process. To increase the strength of samples of fusible clays, the influence of diabase and granitoid rocks was considered. It was found that the strengthening effect of diabase and granitoid rock additives in an amount of 20–50% in a mixture with fusible clay is due to an increase of total content of the crystalline phase (mullite, cristobalite and residual quartz) from 18–20% in clays without additives to 22–28 % - in mixtures with diabase and to 28–34% - with granitoid additives) at a temperature of 1050–1100 °C. This increase is due to the activation of synthesis processes of secondary mullite and crystallization from alkali-rich feldspar melt of amorphous silica, released from the structure of clay minerals. The established influence of the igneous rocks used made it possible to develop compositions and propose process flow sheet for producing aluminosilicate proppants based on fusible clays. The use of granitoid and diabase rocks in an amount of 20–70% with fusible clays produces lightweight aluminosilicate proppants with bulk density of 1.40–1.46 g/cm³ at temperature range of 1050–1100 °C, which can endure destructive pressures up to 34.5–52 MPa.     

Fundamental Evaluation of Power Supply and Rectifiers for Wireless Power Transfer Using Magnetic Resonant Coupling

This paper provides a fundamental analysis of a power supply and rectifiers for wireless power transfer using magnetic resonant coupling (MRC). MRC enables efficient wireless power transfer over middle‐range transfer distances. MRC for wireless power transfer should operate at a high frequency in the industry science medical band, such as 13.56 MHz, because the size of the transfer device decreases at higher transfer frequencies. Therefore, the output frequency of the power supply on the transmitting side should be 13.56 MHz. In addition, the rectifier on the receiving side is operated at a high frequency. This paper focuses on the reflected power in the power supply and rectifiers. Thus, the parametric design method is clarified for the power supply, including a low‐pass filter to match the output, the impedance of the power supply with the characteristic impedance of the transmission line. In addition, the effects on the rectifiers of silicon carbide and gallium nitride diodes are confirmed by performing an experiment and a loss analysis.     

Photovoltaic Power Supply Unit for the Basic Stations of Cellular Companies

The data on the use of solar photovoltaic plants (PVPs) for providing a reliable and guaranteed power supply to telecommunication systems and cellular communication systems in the conditions prevalent in Uzbekistan are given. The research-based structures developed by OOO MIR SOLAR and the selection of PVP elements ensuring their reliable operation are described. The main influencing factors are discussed, and the use of effective combinations of different types of panels (from monocrystalline and polycrystalline silicon) and a specially developed controller are considered.     

Effect of ZnO layer thickness upon optoelectrical properties of NiO/ ZnO heterojunction prepared at room temperature

In this work, p-NiO/n-ZnO heterostructures were successfully prepared at room temperature using RF sputtering technique. The influence of ZnO layer thickness on the performance of the heterojunction was investigated. The deposited ZnO layers have a hexagonal Wurtzite structure with preferable growth orientations along (002) and (103) for thinner films. Increasing the thickness results in more crystallographic orientation randomness. The current–voltage measurements of the realized heterojunctions showed a clear rectifying behavior. The measured ideality factor varies from 2.5 to 1.6 according to the thickness of ZnO layer. The series resistance of the device is enlarged with increasing ZnO thickness. The deduced parameters from the I–V characteristics suggest that 200 nm is the optimal thickness of the ZnO layer according to our experimental conditions. We attribute the relatively better performance of this thickness to achieving reasonable compensation between serial resistance and ideality factor. The best heterojunction was tested and successfully used as a UV detector.     

Electrical and photoelectric properties of electrochemically fabricated SnO2/Cd0.4Zn0.6S/CdTe solar cells

Solar cells based on SnO₂/Cd_0.4Zn_0.6S/CdTe heterostructures are fabricated by electrochemical deposition, and the dependences of their electrical and photoelectric properties on the thermal annealing conditions are studied. It is shown that thermal annealing reduces the tunnel currents by almost two orders of magnitude. The best conditions of thermal annealing are determined (t = 300°C and τ = 9 min). These conditions provide the highest photosensitivity of the heterostructures under study (I _sc ≈ 21.2 mA/cm², U _oc ≈ 813 mV, and η = 14.7%).     

Some features of the chemical transformation of a highly exothermic ore concentrate-based mixture in a combustion wave

Use of inexpensive ore concentrates as initial components in SHS metallurgy [1–3] brings about some specific features in the process and the properties of the materials obtained. Ore reagents contain a considerable amount of impurities (Al₂O₃, SiO₂, Fe₂O₃) that decrease the energetics of SHS systems and the temperature and the rate of combustion and create the limits of combustion and phase separation. In addition, the impurities participate in chemical reactions and enter the desired product. In many cases the presence of silicon, iron, and aluminum in a cast product does not prevent use of this product for practical purposes.Institute of Metallurgy, Academy of Sciences of the Republic of Georgia, Tbilisi. Institute of Structural Macrokinetics, Russian Academy of Sciences, Chernogolovka. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 65, No. 5, pp. 613–616, November, 1993.     

The structure and properties of a Cr<Subscript>3</Subscript>C<Subscript>2</Subscript>-Ni coating deposited by a high-velocity plasma jet onto a copper substrate

Chromium carbide-nickel coatings were deposited onto a technical grade copper substrate by means of a high-velocity plasma jet of a plasmatron operating in specially selected regimes. An analysis of the coatings showed evidence of the formation of a Ni-based solid solution, a complex chromium carbide (Cr₇C₃), and an fcc crystal phase with a lattice parameter of 3.614 Å. The surface of the coatings exhibits a characteristic relief resulting from a dynamic interaction between melted and fused particles of the initial powder. The local hardness on some areas of the surface and in depth of the coating reaches 66±4.5 HRC, while the coating adhesion strength varies from 25 to 300 MPa.