Measurements of distribution of self-bias potential on an RF-plane electrode in plasma etching devices

The self-bias potential (V_dc) induced on an RF-powdered electrode (153 mm Ø) in a plasma is measured using electrical probes which are buried in, de-insulated from, and RF-connected to the electrode. The configuration of the probes allows to study the distribution of V_dc discretely on the electrode. The potential is homogeneous in the absence of external magnetic field. In the presence of a homogeneous magnetic field parallel to the electrode, it is reduced and a monotonous gradient takes place in its distribution due to the plasma shift induced by E × B drift. When the magnetic field is rotated along the axis of the RF-electrode at a frequency less than 50 Hz, the distribution, which is almost identical to the one in a static field, rotates with the magnetic field. On the coordinate system rotating with the magnetic field, the probes are regarded to be rotating. The potential distribution is obtained as a continuous function of the azimuthal angle. Thus the rotation of the field provides information for the experimental interpolation.     

Interferon-gamma and interleukin-10 inhibit antigen presentation by Langerhans cells for T helper type 1 cells by suppressing their CD80 (B7-1) expression

CD80(B7-1) and CD86(B7-2) co-stimulatory molecules have been reported to activate Th1/Th2 development pathways differentially. It is well known that Langerhans cells (LC), potent antigen-presenting dendritic cells in the epidermis, express several co-stimulatory molecules and that this expression is modulated by several cytokines. Based on the recently reported effect of interferon (IFN)-gamma and interleukin (IL-)-10 on the expression of CD80 and CD86 by LC, we examined the effects of these cytokines on the expression of CD54 (intercellular adhesion molecule-1) and CD40 in addition to CD80 and CD86 on LC, and correlated the expression of each co-stimulatory molecule with antigen presentation for a Th1 clone by cultured LC (cLC) treated with these cytokines. LC cultured for 72 h significantly up-regulated MHC class II antigen expression and all the co-stimulatory molecules were examined. As previously reported, IL-10 or IFN-gamma inhibited the up-regulation of CD80 expression. Granulocyte/macrophage-colony-stimulating factor (GM-CSF) partially restored the suppression of CD80 expression induced by IFN-gamma on cultured LC, while it had virtually no effect on the inhibition induced by IL-10. Antigen presentation for the myoglobin-specific syngeneic Th1 clone by cLC, which were pre-incubated with these cytokines, correlated well with their CD80 expression. In addition, among the antibodies for CD80, CD86, CD28 or CD40, the suppression of the Th1 clone stimulation by LC was found to occur only with anti-CD80 and anti-CD28 antibodies. Finally, we studied the effects of IFN-gamma and IL-10 on GM-CSF production by epidermal keratinocytes (KC). We could show that only IFN-gamma, but not IL-10, suppressed GM-CSF production by KC. These findings suggest that both IFN-gamma and IL-10 suppress antigen presentation by LC for Th1 cells by suppressing their CD80 expression. The inhibitory effect of IFN-gamma on CD80 expression on LC appears to be partially mediated through the suppression of GM-CSF production by KC.     

Development of enhanced depth-resolution technique for shallow dopant profiles

A rapid shrinkage in the minimum feature size of integrated circuits requires analysis of dopants in their shallow source–drain and their extensions with an enhanced depth resolution. Rutherford backscattering spectroscopy (RBS) combining a medium-energy He ion beam with a detector of improved energy resolution should meet the requirement of a depth resolution better than 5 nm at a depth of 10–20 nm in the next 10 years. A toroidal electrostatic analyzer of 4×10⁻³ energy resolution has been used to detect the scattered ions of a medium-energy He ion beam. Five keV As⁺ implanted Si or SiO₂ samples were measured. Depth profiling results using the above technique are compared with those of glancing-angle RBS by MeV energy He ions. Limitations in the energy resolution due to various energy-spread contributions have been clarified.     

The Gmicro/500 superscalar microprocessor with branch buffers

The Gmicro/500, which features a RISC-like dual-pipeline structure for high-speed execution of basic instructions and represents a significant advance for the TRON architecture, is presented. Upwardly-object-compatible with earlier members of the Gmicro series, this microprocessor uses resident dedicated branch buffers to greatly enhance branch instruction execution speed. Its microprograms simultaneously use dual execution blocks to execute high-level language instructions effectively. Fabricated with a 0.6-μm CMOS technology on a 10.9-mm×16-mm die, the chip operates at 50/66 MHz and achieves a processing rate of 100/132 MIPS     

Plan for first phase of safety demonstration tests of the High Temperature Engineering Test Reactor (HTTR)

Safety demonstration tests using the High Temperature Engineering Test Reactor (HTTR) will be conducted for the purpose of demonstrating inherent safety features of High Temperature Gas-cooled Reactors (HTGRs) as well as providing the core and plant transient data for validation of HTGR safety analysis codes. The first phase safety demonstration test items include the reactivity insertion test and the coolant flow reduction test. In the reactivity insertion test, which is the control rod withdrawal test, one pair out of 16 pairs of control rods is withdrawn, simulating a reactivity insertion event. The coolant flow reduction test consists of the partial loss of coolant flow test and the gas circulators trip test. In the partial loss of coolant flow test, primary coolant flow rate is slightly reduced by control system. In the gas circulators trip test one and two out of three gas circulators are run down, simulating coolant flow reduction events. The gas circulators trip tests, in which position of control rods are kept unchanged, are simulation tests of anticipated transients without scram (ATWS).     

First plasma experiment on spherical tokamak device UTST

The UTST (University of Tokyo Spherical Tokamak) device was constructed for the purpose of exploring the formation of ultrahigh‐beta ST (spherical tokamak) plasma using the double null plasma merging method. When two plasmas merge together to form a single plasma, magnetic field lines reconnect, and magnetic field energy is converted to plasma kinetic energy, increasing the plasma beta. Merging start‐up has been demonstrated in the TS‐3/4, START, and MAST devices using coils inside the vacuum vessel, and the TS‐3 plasma obtained a 50% beta. In order to demonstrate start‐up in a more reactor‐relevant situation, UTST has all poloidal field (PF) coils outside the vacuum vessel. The first plasma experiment on the UTST was begun in December 2007. In the results, the plasma obtained 10 kA by using only the outer PF coils and a single ST was generated in the lower area (z = –0.3 to –1.0 m) close to a washer gun. This result suggests that another washer gun on the top of the UTST can allow the generation of ST in the upper area and merging start‐up by using outer PF coils. © 2012 Wiley Periodicals, Inc. Electr Eng Jpn, 179(2): 20–26, 2012; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/eej.21216     

Very-high-speed optical signal processing

Challenges of next-generation transmission technologies are summarized in the context of creating future terabit-per-second networks. The technologies will be realized through both the separate and combined evolution of inherent lightwave capabilities along with time-, wavelength-, and space-domain optical processing techniques. Optical signal processing techniques in the tens of gigabit per second range for future high-speed transmission systems and broadband networks are reviewed     

Wide-span optical frequency comb generator for accurate opticalfrequency difference measurement

An optical frequency comb (OFC) generator was realized for accurate optical frequency difference measurement of 1.5 μm wavelength semiconductor lasers by using a high frequency LiNbO₃ electrooptic phase modulator which was installed in a Fabry-Perot cavity. It was confirmed that the span of the OFC was wider than 4 THz. By using semiconductor lasers whose spectrum linewidths were narrowed to 1 kHz and a sensitive optical balanced-mixer-receiver for measuring beat signal between the sideband of the comb and the laser, we demonstrated a frequency difference measurement up to 0.5 THz with a signal-to-noise ratio higher than 61 dB, and a heterodyne optical phase locking with a heterodyne frequency of 0.5 THz in which the residual phase error variance was less than 0.01 rad². The maximum measurable frequency difference, which was defined as the sideband frequency with the signal-to-noise ratio of 0 dB, was estimated to be 4 THz     

Optimal inspection policy for a parallel redundant system

This paper considers an inspection policy for an n-unit parallel redundant system which is checked at successive times x (k=1, 2,…). The preventive maintenance is made if j units (1<j<n−1) fail at each inspection. The expected cost is derived and the optimum policy to minimize it is discussed. Two modified models are introduced. A numerical example is given when the failure times of each unit have a Weibull distribution.