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The AlCoCrCuFeNi high-entropy alloy system was synthesized using a well-developed arc melting and casting method. Their elemental effect on microstructures and hardness was investigated with X-ray diffraction, scanning electron microscopy and Vickers hardness testing. The alloys exhibit quite simple FCC and BCC solid solution phases. Co, Cu and Ni elements enhance the formation of the FCC phase while Al and Cr enhance that of the BCC phase in the alloy system. BCC phases form a spinodal structure during cooling. Copper tends to segregate at the interdendrite region and forms a Cu-rich FCC phase. Low copper content renders the interdendrite as a thin film and the as-cast structure like recrystallized grain structure. The formation of BCC phases significantly increases the hardness level of the alloy system. The strengthening mechanism is discussed. 相似文献
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框架结构焦仓的定向倒塌爆破 总被引:4,自引:1,他引:3
介绍了框架结构焦仓定向爆破拆除的设计与施工,着重介绍了爆破参烽的选取及安全防护措施。达到预期的爆破效果。 相似文献
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Topographically distinct populations of radial glial cells in the diencephalon and mesencephalon of neonatal rats and hamsters were transcellularly labeled with wheat germ agglutinin conjugated to horseradish peroxidase (WGA-HRP) and with the lipophilic tracer DiI. A comparison of the histological distribution of the two tracers is suggestive of two different mechanisms of transcellular labeling. Intraocular injections of WGA-HRP resulted in the uptake of exogenously applied WGA-HRP by retinal ganglion cells, followed by anterograde axonal transport and exocytosis within the optic target nuclei. In addition to the transneuronal labeling, which is typical of such injections, we observed the transcellular labeling of the processes and somata of radial glial cells that were topographically associated with the terminal fields of the labeled axons. Similar transcellular labeling of radial glial cells associated with the axon terminal fields of the colliculogeniculate projection to the medial geniculate nucleus was observed following injections of WGA-HRP in the inferior colliculus. The transcellular labeling within the radial glial cells was discontinuous and somatopetally concentrated, indicating the existence of a retrograde active transport mechanism within the radial glial processes subsequent to its uptake following release of tracer from axons. This type of labeling can be referred to as transcellular retrograde glioplasmic transport. In contrast, DiI was used as a tracer through its capacity to diffuse within the plasmalemma. Topographically distinct populations of radial glial cells were transcellularly labeled following placements of DiI in the retina, inferior colliculus, or dorsal thalamus of fixed brains. The radial processes of labeled radial glial cells consistently extended into regions that also contained labeled axons. It is likely that the transcellular radial glial labeling with DiI occurred via transmembranous diffusion. These data indicate that a close structural and functional relation exists between axons and glial cells in the developing brain. 相似文献
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钟顺虎 《西安建筑科技大学学报(自然科学版)》2002,34(1):89-92
基于人工神经网络技术,建立了后勤供应需求的网络预测方法,并以某区域高校后勤保障需求为例,给出了后勤供应需求预测的步骤与实现过程。 相似文献
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Jungho Kim Kondratko P.K. Shun Lien Chuang Walter G. Holonyak N. Jr. Heller R.D. Jr. Zhang X.B. Dupuis R.D. 《Quantum Electronics, IEEE Journal of》2005,41(11):1369-1379
A theoretical and experimental study of a particular transverse-electric (TE) mode lasing mechanism of a tunneling injection InP quantum-dot (QD) laser is reported. In the experiment, the TE mode lasing action takes place at the first excited state of InP biaxially compressively strained QDs. This QD state is coupled to the ground state of two tensile-strained InGaP quantum wells (QWs) although the tensile-strained QW structure favors the transverse-magnetic (TM) polarization light emission. The measured TE and TM modal gain spectra show a typical QW gain evolution behavior at low injection currents, which can be theoretically modeled by the quasi-equilibrium of carrier distribution. When the injection current is increased near threshold, a TE gain narrowing and a simultaneous TM gain pinning are observed in the measured modal gain spectra, which cannot be explained via the quasi-equilibrium model. We propose a polarization-dependent photon-mediated carrier redistribution in the QD-coupled-QW structure to explain this TE and TM gain evolution behavior. When the injection current is just below threshold, the strong carrier depletion via stimulated emission due to coupling between the InP QD and InGaP QW states plays an important role in carrier redistribution, which depends on the optical transition energy and polarization. This concept of the polarization-dependent photon-mediated carrier redistribution explains the TE gain narrowing and TM gain pinning behavior. In addition, a coupled rate equation model is established, and the calculated polarization power ratio based on the coupled rate equations explains the experimental observation. 相似文献
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我们研制了一种8毫米波变张角、半径突变的多模圆锥馈源。计算出其模比并推导出其辐射方向图公式;给出其在两个主平面——E平面与H平面上的辐射方向图和波束场分布特性的测试结果以及电压驻波比VSWR的测量结果;同时给出频带和旁瓣特性。分析与测试共同表明,在34.5GHz~37GHz频带里,该多模馈源的辐射图在大于24dB范围内获得幅度等化且不出现旁瓣,因此具有一定的应用价值。 相似文献