Application-Specific Instruction-Set Processor for Retinex-Like Image and Video Processing

This brief presents an application-specific instruction-set processor (ASIP) for real-time Retinex image and video filtering. Design optimizations are addressed at algorithmic and architectural levels, the latter including a dedicated memory structure, an adapted pipeline, bypasses, a custom address generator and special looping structures. Synthesized in CMOS technology, the ASIP stands for its better energy-flexibility tradeoff versus reference ASIC and digital signal processing Retinex implementations.     

Untersuchungen zur Bestimmung der Biegebruchfestigkeit gebundener Schleifmittel

Investigations to determine the bending strength of bonded grinding materials Apart from the process characteristics, the safeness of grinding wheels against the breakage caused by centrifugal forces is of special interest. The calculation of the bursting speed of grinding wheels based on experimentally determined bending strengths deviates significantly from measured bursting speeds. This is because of the incorrect determination of the bending strength based on BGG 931. By taking into account the plane stress conditions in the area of applied load, an improved approach to determine the bending strength of bonded grinding materials was developed.     

Probing the dynamics of nanoparticle growth in a flame using synchrotron radiation

Flame synthesis is one of the most versatile and promising technologies for large-scale production of nanoscale materials. Pyrolysis has recently been shown to be a useful route for the production of single-walled nanotubes, quantum dots and a wide variety of nanostructured ceramic oxides for catalysis and electrochemical applications. An understanding of the mechanisms of nanostructural growth in flames has been hampered by a lack of direct observations of particle growth, owing to high temperatures (2,000 K), rapid kinetics (submillisecond scale), dilute growth conditions (10(-6) volume fraction) and optical emission of synthetic flames. Here we report the first successful in situ study of nanoparticle growth in a flame using synchrotron X-ray scattering. The results indicate that simple growth models, first derived for colloidal synthesis, can be used to facilitate our understanding of flame synthesis. Further, the results indicate the feasibility of studies of nanometre-scale aerosols of toxicological and environmental concern.     

Calculation of the bursting speed of one side recessed grinding wheels

Grinding tools like one side recessed grinding wheels are used in many machining applications and must provide a high reliability against fracture concerning safety-relevant and economic aspects. The calculation of the bursting speed on the basis of the mechanical properties is an important tool for the design of grinding wheels. However, no equation is available to estimate the bursting speed of these types of grinding tools so far. For the calculation of the bursting speed of one side recessed grinding wheels a parametric study using FEA was carried out. The results of these investigations provide the basis for a geometric function, which allows in association with a newly-developed fracture criteria to calculate the bursting speed of one side recessed grinding wheels. For the validation of the developed concept spin burst tests with grinding wheels of eight different geometries and two granulations were carried out. The results of these investigations show a very good correlation of the calculated and measured bursting speeds for all tested types of grinding wheels.     

Data-driven forwarding: a typology of digital platforms for road freight transport management

Electronic Markets - The omnipresence of digital platforms (DPs) across industries yields platform-based business concepts that disrupt the road freight market, enabling the digitalization of road...     

SiGe channels for VT control of high-k metal gate transistors for 32 nm complementary metal oxide semiconductor technology and beyond

GLOBALFOUNDRIES 32 nm high-k metal gate technology, with SiGe channel for V_T control of P-field effect transistor, is taken into production. This epitaxial channel material is being introduced into high volume manufacturing in complementary metal oxide semiconductor technology. The morphology of the SiGe channel (cSiGe) for narrow width transistors is carefully controlled by process conditions such as epitaxial growth temperature, pre bake condition or in-situ Si recess prior epitaxial deposition. A micro loading effect observed in 28 nm technology was eliminated by an in-situ recess of the silicon before epitaxial deposition. Due to the significant cost of this process step, an epitaxial batch system has been evaluated to reduce the cost of ownership dramatically. Also the cSiGe process has been optimized to minimize the thickness variation of the SiGe channel due to the strong response of V_T to cSiGe thickness.     

Enhancing epitaxial SixC1 − x deposition by adding Ge

In this work, a possible way to enhance the epitaxial growth of metastable, tensile strained Si_xC_1 − x layers by the addition of germanium is demonstrated. During ultra-high vacuum chemical vapor deposition growth, the co-mixing of germane to the Si_xC_1 − x precursors was found to enhance the growth rate by a factor of ~ 3 compared to the growth of pure Si_xC_1 − x. Furthermore, an increase of the amount of substitutional incorporated carbon has been observed. Selective Si_xGe_yC_{1 − x − y} deposition processes utilizing a cyclic deposition were developed to integrate epitaxial tensile strained layers into source and drain areas of n-channel transistors.     

Subsolidus Phase Relations and Transparent Conductors in the Cadmium-Indium-Tin Oxide System

Subsolidus phase relations have been determined in the CdO–InO_1.5–SnO₂ system at 1175°C. A cubic-bixbyite solution In_{2−2 x} (Cd,Sn)_{2 x} O₃ (0 < x < 0.34), a cubic spinel solution (1− x )CdIn₂O₄– x Cd₂SnO₄ (0 < x < 0.75), and an orthorhombic-perovskite solution Cd_{1− x} Sn_{1− x} In_{2 x} O₃ (0 < x < 0.045) having the GdFeO₃ structure have been discovered. The CdO phase field exists over a small range of InO_1.5 (<3%) and SnO₂ (<1%). Orthorhombic Cd₂SnO₄ (Sr₂PbO₄ structure) and rutile SnO₂ appear to be point compounds with negligible solubility. The vertical section between spinel CdIn₂O₄ and orthorhombic Cd₂SnO₄ was determined between 900° and 1175°C. The spinel phase field (1− x )CdIn₂O₄– x Cd₂SnO₄ was found to extend between x = 0 and x = 0.75 at 1175°C or x = 0.78 at 900°C. All of the phases in this system appear to allow small excess quantities of the donors In and/or Sn (vs cation stoichiometry) which may be the source of the electrons that give these oxides their n-type character. The electrical and optical properties of bulk and thin-film specimens in this system are compared and contrasted with each other and the relative merits of each are assessed.